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BSC016N06NSATMA1
BSC016N06NSATMA1
376-BSC016N06NSATMA1
8-PowerTDFN
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 1.6m Ω @ 50A, 10V ±20V 5200pF @ 30V 71nC @ 10V 8-PowerTDFN
In Stock : 999
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Product Details
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BSC016N06NSATMA1 Overview
A device's maximal input capacitance is 5200pF @ 30V, which is defined as the capacitance between its input terminals with either input grounded.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.There is no pulsed drain current maximum for this device based on its rated peak drain current 400A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 19 ns seconds.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.With 60V power, it supports a dual voltage supply of up to maximum.A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
BSC016N06NSATMA1 Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 400A.
BSC016N06NSATMA1 Applications
There are a lot of Infineon Technologies BSC016N06NSATMA1 applications of single MOSFETs transistors.
- Telecom 1 Sever Power Supplies
- General Purpose Interfacing Switch
- LCD/LED/ PDP TV Lighting
- Solar Inverter
- Synchronous Rectification
- DC-to-DC converters
- AC-DC Power Supply
- Power Tools
- PFC stages, hard switching PWM stages and resonant switching
- Motor control
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BSC016N06NSATMA1
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