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AFT05MS003NT1

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Manufacturer No:

AFT05MS003NT1

Manufacturer:

NXP Semiconductors

HK JDW NO:

318-AFT05MS003NT1

Package:

TO-243AA

Datasheet:

AFT05MS003NT1

Description:

AFT05MS003NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

Purchasing and Inquiry

AFT05MS003NT1 Description

 

AFT05MS003NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AFT05MS003NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT05MS003NT1 has the common source configuration.

 

 

AFT05MS003NT1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

AFT05MS003NT1 Applications

 

ISM applications

DC large signal applications

 


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

AFT05MS003NT1

technical specifications, attributes, parameters and parts with similar specifications to AFT05MS003NT1.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    10 Weeks

  • Package / Case

    TO-243AA

  • Packaging

    Tape & Reel (TR)

  • Published

    2014

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • Voltage - Rated

    30V

  • HTS Code

    8541.29.00.75

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Frequency

    520MHz

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Current - Test

    100mA

  • Transistor Type

    LDMOS

  • Gain

    20.8dB

  • Power - Output

    3W

  • Voltage - Test

    7.5V

  • RoHS Status

    ROHS3 Compliant

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