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A3T23H300W23SR6
A3T23H300W23SR6
318-A3T23H300W23SR6
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A3T23H300W23SR6 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at HK JDW
In Stock : 999
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Product Details
Purchasing and Inquiry
A3T23H300W23SR6 Description
For cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz, this 63 W asymmetrical Doherty RF power LDMOS transistor is created. This product can be applied in a variety of circumstances and is meant for general use.
A3T23H300W23SR6 Features
Doherty advanced high performance in-package
Created for high-bandwidth immediate applications
The ability to resist exceptionally high output VSWR and broadband working conditions. A larger negative gate-source voltage range for enhanced Class C performance.
Made for systems that correct for digital predistortion
A3T23H300W23SR6 Applications
Switching applications
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Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
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DHL(www.dhl.com) From $40.00 basic shipping fee depend on zone and country. |
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A3T23H300W23SR6
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