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Home Home Discrete Semiconductors Single MOSFETs Transistors 2N7002BKMB,315
2N7002BKMB,315
  • 2N7002BKMB,315
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2N7002BKMB,315

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Manufacturer No:

2N7002BKMB,315

Manufacturer:

Nexperia USA Inc.

HK JDW NO:

554-2N7002BKMB,315

Package:

3-XFDFN

Datasheet:

2N7002BKMB,315

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.6 Ω @ 450mA, 10V ±20V 50pF @ 10V 0.6nC @ 4.5V 3-XFDFN

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In Stock : 999

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Product Details

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2N7002BKMB,315 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 50pF @ 10V maximal input capacitance.This device has a continuous drain current (ID) of [450mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.As shown in the table below, the drain current of this device is 0.45A.When the device is turned off, a turn-off delay time of 12 ns occurs as the input capacitance charges before drain current conduction commences.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.Powered by 60V, it supports maximum dual supply voltages.This device reduces its overall power consumption by using drive voltage (10V).

2N7002BKMB,315 Features


a continuous drain current (ID) of 450mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12 ns

2N7002BKMB,315 Applications


There are a lot of Nexperia USA Inc. 2N7002BKMB,315 applications of single MOSFETs transistors.

  • Solar Inverter
  • DC-to-DC converters
  • Lighting, Server, Telecom and UPS.
  • Micro Solar Inverter
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting
  • Consumer Appliances
  • Power Tools
  • Telecom 1 Sever Power Supplies
  • AC-DC Power Supply
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

2N7002BKMB,315

technical specifications, attributes, parameters and parts with similar specifications to 2N7002BKMB,315.

  • Type
    Parameter
    Select All

  • Factory Lead Time

    5 Weeks

  • Contact Plating

    Tin

  • Mounting Type

    Surface Mount

  • Package / Case

    3-XFDFN

  • Surface Mount

    YES

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2017

  • JESD-609 Code

    e3

  • Part Status

    Last Time Buy

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Additional Feature

    LOGIC LEVEL COMPATIBLE

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    BOTTOM

  • Pin Count

    3

  • Number of Elements

    1

  • Power Dissipation-Max

    360mW Ta

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    715mW

  • Case Connection

    DRAIN

  • Turn On Delay Time

    5 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    1.6 Ω @ 450mA, 10V

  • Vgs(th) (Max) @ Id

    2.1V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    50pF @ 10V

  • Current - Continuous Drain (Id) @ 25°C

    450mA Ta

  • Gate Charge (Qg) (Max) @ Vgs

    0.6nC @ 4.5V

  • Rise Time

    6ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    7 ns

  • Turn-Off Delay Time

    12 ns

  • Continuous Drain Current (ID)

    450mA

  • Gate to Source Voltage (Vgs)

    20V

  • Max Dual Supply Voltage

    60V

  • Drain Current-Max (Abs) (ID)

    0.45A

  • Drain to Source Breakdown Voltage

    60V

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

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