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2N2907AUB
2N2907AUB
861-2N2907AUB
3-LCC
2N2907AUB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from TT Electronics/Optek Technology stock available at HK JDW
In Stock : 999
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2N2907AUB Overview
This device has a DC current gain of 100 @ 1mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.A constant collector voltage of 600mA is necessary for high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Supplier package Ceramic SMD contains the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
2N2907AUB Features
the DC current gain for this device is 100 @ 1mA 10V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of Ceramic SMD
2N2907AUB Applications
There are a lot of TT Electronics/Optek Technology 2N2907AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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2N2907AUB
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