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2N2907AUA
2N2907AUA
861-2N2907AUA
4-CLCC
2N2907AUA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from TT Electronics/Optek Technology stock available at HK JDW
In Stock : 999
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2N2907AUA Overview
DC current gain in this device equals 100 @ 1mA 10V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 1.6V, it offers maximum design flexibility.A VCE saturation (Max) of 1.6V @ 50mA, 500mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This product comes in a Ceramic SMD device package from the supplier.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.A maximum collector current of 600mA volts can be achieved.
2N2907AUA Features
the DC current gain for this device is 100 @ 1mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of Ceramic SMD
2N2907AUA Applications
There are a lot of TT Electronics/Optek Technology 2N2907AUA applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
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2N2907AUA
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