Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Number of Terminals | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Page Size | Serial Bus Type | I2C Control Byte | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IS42VM32400G-6BL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Discontinued | 3 (168 Hours) | ROHS3 Compliant | 90-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile | 90-TFBGA (8x13) | 5.5ns | 128Mb 4M x 32 | Volatile | 1.7V~1.95V | 166MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3577S80PFI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2005 | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | Non-RoHS Compliant | 100 | FLOW-THROUGH ARCHITECTURE | TQFP | Parallel | 3.465V | not_compliant | 3.135V | 4.5 Mb | 100MHz | CMOS | 1 | 210mA | e0 | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | INDUSTRIAL | 0.65mm | SRAMs | Not Qualified | 3-STATE | 8 ns | RAM, SRAM | 17b | 36 | Synchronous | 0.035A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "HTEE25608") |
HTEE25608 | Honeywell Aerospace | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Bulk | 2013 | Active | 1 (Unlimited) | 225°C | -55°C | RoHS Compliant | 56 | 56-BCPGA | Parallel, Serial | Through Hole | -55°C~225°C TA | EEPROM | 56-CPGA | 150ns | 256Kb 32K x 8 | Non-Volatile | 4.75V~5.25V | 5MHz | EEPROM | Parallel, SPI | 90ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24T02F-WGE2 | ROHM Semiconductor | 0.7000 |
Min: 1 Mult: 1 |
0.00000000 | 11 Weeks | Cut Tape (CT) | 2016 | yes | Active | 1 (Unlimited) | 8 | 5mm | ROHS3 Compliant | 8 | SEATED HT-CALCULATED | 8-SOIC (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 4.4mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.71mm | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | 8 | YES | 1.27mm | 1.6V | Not Qualified | 5.5V | 2Kb 256 x 8 | Non-Volatile | 0.002mA | 1.6V~5.5V | 8 | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | MICROWIRE | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BQ4010YMA-85N | Texas Instruments | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | no | Obsolete | 1 (Unlimited) | 28 | EAR99 | 5V | 37.72mm | ROHS3 Compliant | Contains Lead | No | 28 | 28-DIP Module (0.61, 15.49mm) | 64 kb | Through Hole | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | 50mA | 9.53mm | 8542.32.00.41 | 1 | 50mA | DUAL | 5V | BQ4010 | 2.54mm | SRAMs | 5V | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | 8KX8 | 8 | 8b | 0.004A | 85 ns | 8b | NVSRAM | Parallel | 85ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25LD20COIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-TSSOP (0.173, 4.40mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 2Mb 256K x 8 | Non-Volatile | 1.65V~2V | 50MHz | FLASH | SPI - Dual I/O | 97μs, 6ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25VE16CTIG | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 16Mb 2M x 8 | Non-Volatile | 2.1V~3.6V | 104MHz | FLASH | SPI - Quad I/O | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS64LPS12832A-200TQLA3 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | yes | Active | 2 (1 Year) | 100 | 3A991.B.2.A | 3.3V | 4 | 20mm | Non-RoHS Compliant | No | 100 | PIPELINED ARCHITECTURE | 100-LQFP | 4 Mb | Surface Mount | -40°C~125°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | 225mA | e3 | Matte Tin (Sn) - annealed | QUAD | 260 | 3.3V | 40 | 100 | YES | 0.65mm | 3.135V | 3-STATE | 3.1ns | 4Mb 128K x 32 | Volatile | 17b | 3.135V~3.465V | 128KX32 | 32 | Synchronous | 200MHz | 0.09A | 32b | COMMON | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7134LA55P | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 48-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7134 | 48-PDIP | 55ns | 32Kb 4K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD25LQ16LIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | 8 | 2.525mm | ROHS3 Compliant | 8-XFBGA, WLCSP | 1.511mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 0.5mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.5mm | R-PBGA-B8 | 1.65V | 2V | 16Mb 2M x 8 | Non-Volatile | 1.65V~2.1V | 16MX1 | 1 | 16777216 bit | SERIAL | 104MHz | 1.8V | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V016SA20PHG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tape & Reel | 2011 | yes | Active | 3 (168 Hours) | 44 | 70°C | 0°C | 3.3V | 1 | 18.41mm | RoHS Compliant | Lead Free | No | 44 | TSOP | Parallel | 3.6V | 3V | 1 Mb | 10.16mm | 1mm | CMOS | 1 | 120mA | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 3.3V | 30 | 44 | COMMERCIAL | 0.8mm | SRAMs | 3-STATE | 20 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 16b | Asynchronous | 16b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7007S55PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 80-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7007 | 80-TQFP (14x14) | 55ns | 256Kb 32K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24L02FV-WE2 | ROHM Semiconductor | 0.3886 |
Min: 1 Mult: 1 |
0.00000000 | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.4mm | ROHS3 Compliant | Lead Free | Copper, Tin | No | 8 | 8-LSSOP (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | No SVHC | 2 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1.5mm | 1 | 2mA | e2 | Tin/Copper (Sn/Cu) | DUAL | 260 | 2.5V | 10 | BR24L02 | 8 | 0.65mm | 1.7V | 2/5V | 5.5V | 900 ns | 2Kb 256 x 8 | Non-Volatile | 1.8V~5.5V | 8 | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71T75702S75PFG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71T75 | 100-TQFP (14x14) | 7.5ns | 18Mb 512K x 36 | Volatile | 2.375V~2.625V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD25VQ40CSIG | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 4Mb 512K x 8 | Non-Volatile | 2.3V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 50μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C8M16D1-5BCN | Alliance Memory, Inc. | 3.4912 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2015 | yes | Active | 3 (168 Hours) | 60 | EAR99 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 60-TFBGA | 8mm | Surface Mount | 0°C~70°C TA | SDRAM - DDR | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 2.5V | NOT SPECIFIED | YES | 1mm | R-PBGA-B60 | 2.3V | 2.7V | 700ps | 128Mb 8M x 16 | Volatile | 2.3V~2.7V | 8MX16 | 16 | 134217728 bit | 200MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SM662GXC-BD | Silicon Motion, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT41K512M16VRN-107 IT:P TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 96-TFBGA | Surface Mount | -40°C~95°C TC | SDRAM - DDR3L | 20ns | 8Gb 512M x 16 | Volatile | 1.283V~1.45V | 933MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43LD32640B-18BLI | ISSI, Integrated Silicon Solution Inc | 16.3405 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Tray | Active | 3 (168 Hours) | 134 | 1 | 11.5mm | ROHS3 Compliant | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 134-TFBGA | 10mm | Surface Mount | -40°C~85°C TC | SDRAM - Mobile LPDDR2-S4 | SYNCHRONOUS | 1.1mm | 1 | BOTTOM | NOT SPECIFIED | 1.2V | NOT SPECIFIED | YES | 0.65mm | R-PBGA-B134 | 1.14V | 1.3V | 2Gb 64M x 32 | Volatile | 1.14V~1.95V | 64MX32 | 32 | 2147483648 bit | 533MHz | MULTI BANK PAGE BURST | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W9825G6JB-6 TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 54-TFBGA | Surface Mount | 0°C~70°C TA | SDRAM | 5ns | 256Mb 16M x 16 | Volatile | 3V~3.6V | 166MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
BR24A02F-WME2 | ROHM Semiconductor | 0.0751 |
Min: 1 Mult: 1 |
0.00000000 | 11 Weeks | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | 8 | 8-SOIC (0.173, 4.40mm Width) | Unknown | 4.4mm | Surface Mount | -40°C~105°C TA | CMOS | SYNCHRONOUS | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | 8 | YES | 1.27mm | 2.5V | Not Qualified | 3/5V | 5.5V | 2Kb 256 x 8 | Non-Volatile | 0.002mA | 2.5V~5.5V | 8 | SERIAL | 400kHz | 0.000002A | 40 | 100000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS4C8M32SA-6BIN | Alliance Memory, Inc. | 7.6715 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | Active | 3 (168 Hours) | 90 | EAR99 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 90-TFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.24 | 1 | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B90 | 3V | 3.6V | 5ns | 256Mb 8M x 32 | Volatile | 3V~3.6V | 8MX32 | 32 | 268435456 bit | 166MHz | DRAM | Parallel | 2ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS25LP032D-JNLA3 | ISSI, Integrated Silicon Solution Inc | 3.9752 |
Min: 1 Mult: 1 |
0.00000000 | 2 Weeks | Tray | Automotive, AEC-Q100 | Active | 3 (168 Hours) | 8 | 4.9mm | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | SYNCHRONOUS | 1.75mm | 1 | e3 | Tin (Sn) | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G8 | 2.3V | 3.6V | 32Mb 4M x 8 | Non-Volatile | 2.3V~3.6V | 4MX8 | 8 | 33554432 bit | SERIAL | 133MHz | 1 | 3V | FLASH | SPI - Quad I/O, QPI, DTR | 800μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V67802S166PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V67802 | 3.5ns | 9Mb 512K x 18 | Volatile | 3.135V~3.465V | 166MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S34ML02G100TFI003 | SkyHigh Memory Limited | 4.5343 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | 48 | 18.4mm | RoHS Compliant | 12mm | CMOS | ASYNCHRONOUS | 1.2mm | 1 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 3.3V | NOT SPECIFIED | INDUSTRIAL | YES | 0.5mm | R-PDSO-G48 | 2.7V | 85°C | -40°C | 3.6V | 256MX8 | 8 | 2147483648 bit | FLASH | PARALLEL | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71P71804S200BQ8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II | IDT71P71 | 165-CABGA (13x15) | 7.88ns | 18Mb 1M x 18 | Volatile | 1.7V~1.9V | 200MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
X28HC64D-90 | Intersil Corporation | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | EAR99 | Non-RoHS Compliant | SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION | not_compliant | 15.24mm | CMOS | ASYNCHRONOUS | 5.92mm | 8542.32.00.51 | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | THROUGH-HOLE | NOT SPECIFIED | 5V | NOT SPECIFIED | 28 | COMMERCIAL | NO | 2.54mm | R-GDIP-T28 | 4.5V | 70°C | EEPROMs | Not Qualified | 5V | 5.5V | 28 | 0.04mA | 8KX8 | 8 | 65536 bit | EEPROM | PARALLEL | 0.0002A | 90 ns | 1000000 Write/Erase Cycles | 5ms | 5V | YES | YES | NO | 64words | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43TR81280B-15GBL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 78 | EAR99 | 1 | 10.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 78-TFBGA | 8mm | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | e1 | TIN SILVER COPPER | BOTTOM | NOT SPECIFIED | 1.5V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B78 | 1.425V | 1.575V | 20ns | 1Gb 128M x 8 | Volatile | 1.425V~1.575V | 128MX8 | 8 | 1073741824 bit | 667MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V65603S150BQ | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 3 (168 Hours) | Non-RoHS Compliant | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V65603 | 165-CABGA (13x15) | 3.8ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 150MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V321L55J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 3.3V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | BATTERY BACKUP;AUTOMATIC POWER DOWN | PLCC | Parallel | 3.6V | 3V | 16 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 85mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 52 | COMMERCIAL | SRAMs | 3-STATE | 55 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 8b | COMMON | 2V |
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IDT71V3577S80PFI Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 4.5 Mb kb 20mm mm 210mA mA 36b b
Price: 0.0000
RFQ -
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BQ4010YMA-85N Texas Instruments
5V V Through Hole Memory IC BQ4010 64 kb kb 37.72mm mm 50mA mA 8b b
Price: 0.0000
RFQ -
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IS64LPS12832A-200TQLA3 ISSI, Integrated Silicon Solution Inc
100 Pin Memory IC 4 Mb kb 20mm mm 225mA mA 32b b
Price: 0.0000
RFQ -
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71V016SA20PHG8 Integrated Device Technology (IDT)
Surface Mount 44 Pin Memory IC 1 Mb kb 18.41mm mm 120mA mA 16b b
Price: 0.0000
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BR24L02FV-WE2 ROHM Semiconductor
2/5V V Surface Mount 8 Pin Memory IC BR24L02 2 kb kb 4.4mm mm 2mA mA
Price: 0.3886
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MT41K512M16VRN-107 IT:P TR Micron Technology Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
Price: 0.0000
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BR24A02F-WME2 ROHM Semiconductor
3/5V V Automotive, AEC-Q100 8 Pin Memory IC Automotive, AEC-Q100 Series 5mm mm
Price: 0.0751
RFQ -
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IS25LP032D-JNLA3 ISSI, Integrated Silicon Solution Inc
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 4.9mm mm
Price: 3.9752
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71V321L55J8 Integrated Device Technology (IDT)
Surface Mount 52 Pin Memory IC 16 kb kb 19mm mm 85mA mA 8b b
Price: 0.0000
RFQ
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