Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Halogen Free | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Total Dose | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.png "DS28E11P+T") |
DS28E11P+T | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V27L20PFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2012 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 2 | 14mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 3.6V | 3V | 512 kb | 14mm | 1.4mm | CMOS | 1 | 230mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | 0.5mm | SRAMs | 3-STATE | 20 ns | 64kB | RAM, SDR, SRAM | 30b | Asynchronous | 0.006A | 16b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT49H64M9CBM-25E:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | 2015 | Obsolete | 3 (168 Hours) | 144 | EAR99 | 1.8V | 1 | 18.5mm | ROHS3 Compliant | Lead Free | No | 144 | AUTO REFRESH | 144-TFBGA | 576 Mb | Surface Mount | 0°C~95°C TC | CMOS | 1.2mm | 8542.32.00.32 | 1 | 400MHz | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 1.8V | MT49H64M9 | 144 | YES | 1mm | 1.7V | 1.5/1.81.82.5V | 1.9V | 3-STATE | 15ns | 576Mb 64M x 9 | Volatile | 25b | 0.655mA | 1.7V~1.9V | 64MX9 | 9 | 9b | 0.005A | SEPARATE | DRAM | Parallel | 248 | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CG8077AA | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Obsolete | Vendor Undefined | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CAT24C256LI-G | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2008 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5V | 10.16mm | RoHS Compliant | Lead Free | Gold | No | 8 | 100 YEAR DATA RETENTION | 8-DIP (0.300, 7.62mm) | 2-Wire, I2C, Serial | No SVHC | 256 kb | 4.95mm | 7.11mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 3mA | e4 | DUAL | 5V | CAT24C256 | 8 | 2.54mm | Halogen Free | 500ns | 256Kb 32K x 8 | Non-Volatile | 1.8V~5.5V | 1MHz | 0.000001A | 100 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7132LA55FB | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tube | Active | 1 (Unlimited) | Non-RoHS Compliant | 48-FlatPack | Surface Mount | -55°C~125°C TA | SRAM - Dual Port, Asynchronous | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43DR16640B-25DBL-TR | ISSI, Integrated Silicon Solution Inc | 4.8457 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 84 | ROHS3 Compliant | 84 | 84-TFBGA | Surface Mount | 0°C~70°C TA | SDRAM - DDR2 | BOTTOM | 1.8V | YES | 0.8mm | Not Qualified | 1.8V | 3-STATE | 400ps | 1Gb 64M x 16 | Volatile | 0.27mA | 1.7V~1.9V | 64MX16 | 16 | 1073741824 bit | 16b | 400MHz | 0.015A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CG7777AAT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | Vendor Undefined | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
5962F1120101VXA | Cypress Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 165 | 9A515.E | 25mm | Non-RoHS Compliant | 21mm | CMOS | SYNCHRONOUS | 5.38mm | 8542.32.00.41 | 1 | BOTTOM | UNSPECIFIED | NOT SPECIFIED | 1.8V | NOT SPECIFIED | MILITARY | YES | 1.27mm | R-CBGA-X165 | 1.7V | 125°C | -55°C | Qualified | 1.9V | MIL-PRF-38535 Class V | 4MX18 | 18 | 75497472 bit | QDR SRAM | 300k Rad(Si) V | PARALLEL | 0.85 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24A32F-WLBH2 | ROHM Semiconductor | 5.1003 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Cut Tape (CT) | Active | 1 (Unlimited) | 8 | 5mm | ROHS3 Compliant | ALSO AVAILABLE IN 100KHZ AND SEATED HT-CALCULATED | 8-SOIC (0.173, 4.40mm Width) | 4.4mm | Surface Mount | -40°C~105°C TA | CMOS | SYNCHRONOUS | 1.71mm | 1 | DUAL | NOT SPECIFIED | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G8 | 2.5V | 5.5V | 32Kb 4K x 8 | Non-Volatile | 2.5V~5.5V | 4KX8 | 8 | 32768 bit | SERIAL | 400kHz | 5ms | I2C | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S99-50312 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71T75602S166PFGI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71T75 | 3.5ns | 18Mb 512K x 36 | Volatile | 2.375V~2.625V | 166MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS2030W-100# | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2006 | Obsolete | 5 (48 Hours) | 256 | EAR99 | 3.3V | 27mm | ROHS3 Compliant | Lead Free | No | 256 | 256-BGA | 256 kb | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | 8.72mm | 8542.32.00.41 | 1 | BOTTOM | 3.3V | DS2030 | 256 | YES | 1.27mm | 3V | SRAMs | 3.6V | 256Kb 32K x 8 | Non-Volatile | 0.05mA | 3V~3.6V | 32KX8 | 8 | 8b | 0.005A | 100 ns | NVSRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
PC28F00AM29EWLE | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Tray | 2011 | yes | Obsolete | 3 (168 Hours) | 64 | 13mm | ROHS3 Compliant | No | 64 | 64-LBGA | 1 Gb | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.4mm | 1 | 31mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | 28F00AM29EW | YES | 1mm | 3/3.3V | 2.7V | 1Gb 128M x 8 64M x 16 | Non-Volatile | 2.7V~3.6V | 16 | Asynchronous | 0.00024A | 100 ns | 8 | YES | YES | YES | 1K | 16/32words | YES | YES | FLASH | Parallel | 100ns | 128K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53E1DBDS-DC | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C64M16D3A-12BIN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2015 | yes | Discontinued | 3 (168 Hours) | 96 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-VFBGA | 8mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR3 | SYNCHRONOUS | 1mm | 1 | BOTTOM | NOT SPECIFIED | 1.5V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B96 | 1.425V | 1.575V | 20ns | 1Gb 64M x 16 | Volatile | 1.425V~1.575V | 64MX16 | 16 | 1073741824 bit | 800MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR93H56RFVM-2CTR | ROHM Semiconductor | 0.8400 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Cut Tape (CT) | 2016 | Automotive, AEC-Q100 | Active | 3 (168 Hours) | 8 | 2.9mm | ROHS3 Compliant | 8 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | Unknown | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 0.9mm | 1 | DUAL | NOT SPECIFIED | 4V | NOT SPECIFIED | YES | 0.65mm | 2.5V | Not Qualified | 3/5V | 5.5V | 2Kb 128 x 16 | Non-Volatile | 0.003mA | 2.5V~5.5V | 16 | SERIAL | 2MHz | 0.00001A | 100 | 1000000 Write/Erase Cycles | SOFTWARE | 4ms | MICROWIRE | EEPROM | SPI | 4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V3389S5PRFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 128-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Synchronous | IDT70V3389 | 128-TQFP (14x20) | 5ns | 1.125Mb 64K x 18 | Volatile | 3.15V~3.45V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1245W-100+ | Maxim Integrated | 28.8331 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 32 | 3A991.B.2.A | 3.3V | ROHS3 Compliant | Lead Free | Tin | No | 32 | 10 YEAR DATA RETENTION | 32-DIP Module (0.600, 15.24mm) | Unknown | 1 Mb | 100GHz | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 50mA | 8473.30.11.40 | 1 | e3 | DUAL | 3.3V | DS1245W | 32 | 2.54mm | 3V | SRAMs | 3.6V | 1Mb 128K x 8 | Non-Volatile | 0.05mA | 3V~3.6V | 128KX8 | 8 | 8b | 0.00025A | 100 ns | NVSRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
DS1250W-100+ | Maxim Integrated | 85.5332 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Tube | 2004 | yes | Active | 1 (Unlimited) | 32 | 3A991.B.2.A | ROHS3 Compliant | 32-DIP Module (0.600, 15.24mm) | not_compliant | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 8473.30.11.40 | 1 | e3 | MATTE TIN | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | DS1250W | 32 | NO | 2.54mm | R-XDMA-P32 | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 4Mb 512K x 8 | Non-Volatile | 0.05mA | 3V~3.6V | 512KX8 | 8 | 4194304 bit | 0.00025A | 100 ns | NVSRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S99ML04G10044 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71024S12YI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | 85°C | -40°C | 20.96mm | Non-RoHS Compliant | 32 | Parallel | not_compliant | 10.16mm | CMOS | 3.683mm | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 5V | 30 | 32 | INDUSTRIAL | YES | 1.27mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 0.16mA | 128KX8 | 8 | 1048576 bit | 0.01A | 12 ns | COMMON | 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CS6681BM | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7024S17PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7024 | 64Kb 4K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 17ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS24B33G+T&R | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tape & Reel (TR) | 2012 | Active | 1 (Unlimited) | 85°C | -40°C | 6V | ROHS3 Compliant | No | 2 | 2-SFN | Serial | 4 kb | Surface Mount | -40°C~85°C TA | EEPROM | DS24B33 | 2-SFN (6x6) | 2μs | 4Kb 256 x 16 | Non-Volatile | 2.8V~5.25V | EEPROM | 1-Wire® | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DS28E05GB+U | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Strip | 2012 | Active | 1 (Unlimited) | ROHS3 Compliant | 2 | 2-XDFN | Serial | Surface Mount | -40°C~85°C TA | DS28E05 | 2μs | 896b 112 x 8 | Non-Volatile | 3V~3.6V | EEPROM | 1-Wire® | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F64G08CBAABWP-12Z:A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2016 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND | 64Gb 8G x 8 | Non-Volatile | 2.7V~3.6V | 83MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS28E80Q+T | Maxim Integrated | 1.8301 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tape & Reel (TR) | 2014 | Active | 1 (Unlimited) | ROHS3 Compliant | 6-WDFN Exposed Pad | Serial | Surface Mount | -40°C~85°C TA | 8542.32.00.71 | NOT SPECIFIED | NOT SPECIFIED | DS28E80 | 2μs | 2Kb 2K x 1 | Non-Volatile | 2.97V~3.63V | EEPROM | 1-Wire® | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25LQ20CTIG | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 2Mb 256K x 8 | Non-Volatile | 1.65V~2.1V | 104MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42VM16160D-8BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Discontinued | 3 (168 Hours) | 54 | EAR99 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 54-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile | SYNCHRONOUS | 1.2mm | 8542.32.00.24 | 1 | 125MHz | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 10 | YES | 0.8mm | R-PBGA-B54 | 1.7V | 1.95V | 6ns | 256Mb 16M x 16 | Volatile | 1.7V~1.95V | 16MX16 | 16 | 268435456 bit | 16b | DRAM | Parallel |
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70V27L20PFGI Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 512 kb kb 14mm mm 230mA mA 16b b
Price: 0.0000
RFQ -
MT49H64M9CBM-25E:B Micron Technology Inc.
1.5/1.81.82.5V V 144 Pin Memory IC MT49H64M9 576 Mb kb 18.5mm mm
Price: 0.0000
RFQ -
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CAT24C256LI-G ON Semiconductor
Through Hole 8 Pin Memory IC CAT24C256 256 kb kb 10.16mm mm 3mA mA
Price: 0.0000
RFQ -
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PC28F00AM29EWLE Micron Technology Inc.
3/3.3V V Memory IC 28F00AM29EW 1 Gb kb 13mm mm 31mA mA
Price: 0.0000
RFQ -
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BR93H56RFVM-2CTR ROHM Semiconductor
3/5V V Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 2.9mm mm
Price: 0.8400
RFQ -
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