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IGBTs Modules
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IGBT module product filter
Common filter conditions include, manufacturer, configuration, collector maximum current, voltage, pin count, etc.
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 12 Weeks
- 14 Weeks
- 16 Weeks
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Panel, Screw
- Screw
Mounting Type
- Chassis Mount
Number of Pins
- 20
- 23
- 24
- 29
- 7
Number of Terminations
- 20
- 23
- 24
- 29
- 35
- 7
Operating Temperature
- -40°C~125°C
- -40°C~125°C TJ
- -40°C~150°C
- -40°C~150°C TJ
Package / Case
- Module
Part Status
- Active
- Not For New Designs
Pbfree Code
- no
- yes
Published
- 2001
- 2002
- 2014
Series
- C
Surface Mount
- NO
Transistor Element Material
- SILICON
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | Polarity | Case Connection | Halogen Free | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Supplier Device Package | Input | Power Dissipation-Max | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Input Capacitance | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APTGF100DU120TG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount, Screw | 2006 | yes | Obsolete | 1 (Unlimited) | 12 | EAR99 | 150°C | -40°C | RoHS Compliant | 20 | SP4 | Chassis Mount | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 12 | R-XUFM-X12 | Insulated Gate BIP Transistors | Not Qualified | 568W | 2 | Dual, Common Source | ISOLATED | N-CHANNEL | Dual | Standard | 135A | 1.2kV | 1.2kV | POWER CONTROL | 6.9nF | 350μA | 100 ns | 3.7V @ 15V, 100A | 400 ns | NPT | Yes | 6.9nF @ 25V | 3.7 V | 1200V | |||||||||||||||||||||||||||||||||||
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FZ600R65KE3NOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Screw | 2002 | no | Active | 1 (Unlimited) | 9 | Non-RoHS Compliant | Contains Lead | 9 | Module | Chassis Mount | -50°C~125°C | UPPER | UNSPECIFIED | 9 | 2400W | 3 | Single | ISOLATED | Not Halogen Free | N-CHANNEL | Standard | 600A | 6.5kV | POWER CONTROL | SILICON | 5mA | 1200 ns | 3.4V @ 15V, 600A | 8100 ns | No | 160nF @ 25V | 6500V | 1200A | ||||||||||||||||||||||||||||||||||||||||||||
| FMG2G200US60 | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | yes | Obsolete | 3 (168 Hours) | 7 | ROHS3 Compliant | UL RECOGNIZED | 7PM-HA | Chassis Mount | -40°C~150°C TJ | e3 | TIN | UPPER | UNSPECIFIED | 7 | NO | R-PUFM-X7 | COMMERCIAL | 695W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Standard | MOTOR CONTROL | SILICON | 250μA | 330 ns | 2.7V @ 15V, 200A | 410 ns | No | 600V | 200A | ||||||||||||||||||||||||||||||||||||||||||||||||
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APTGT50X60T3G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 2007 | yes | Active | 1 (Unlimited) | 25 | EAR99 | 73.4mm | RoHS Compliant | Lead Free | No | 32 | SP3 | 11.5mm | 40.8mm | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 25 | R-XUFM-X25 | Insulated Gate BIP Transistors | 176W | 176W | 6 | Three Phase Inverter | ISOLATED | N-CHANNEL | 110 ns | Standard | 80A | 600V | 600V | MOTOR CONTROL | 200 ns | SILICON | 3.15nF | 250μA | 1.5V | 170 ns | 1.9V @ 15V, 50A | 310 ns | Trench Field Stop | Yes | 20V | 3.15nF @ 25V | 1.9 V | ||||||||||||||||||||||||||||
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APT35GP120J | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount, Screw | POWER MOS 7® | yes | Active | 1 (Unlimited) | 4 | RoHS Compliant | Lead Free | 64A | 4 | ULTRA FAST, LOW CONDUCTION LOSS | ISOTOP | Chassis Mount | -55°C~150°C TJ | 1.2kV | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | 284W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 64A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 3.24nF | 250μA | 36 ns | 3.9V @ 15V, 35A | 222 ns | PT | No | 20V | 3.24nF @ 25V | 1200V | 6V | ||||||||||||||||||||||||||||||||||||
| FS660R08A6P2FBBPSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 39 Weeks | HybridPACK™ | Active | Module | Chassis Mount | -40°C~150°C TJ | 1053W | Three Phase Inverter | Standard | 1mA | 1.35V @ 15V, 450A | Trench Field Stop | Yes | 80nF @ 50V | 750V | 450A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FS200R12KT4RBOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | 2013 | no | Active | 1 (Unlimited) | 35 | EAR99 | ROHS3 Compliant | Contains Lead | UL RECOGNIZED | Module | Chassis Mount | -40°C~150°C TJ | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 35 | NO | R-XUFM-X35 | Not Qualified | 1000W | 6 | Three Phase Inverter | ISOLATED | Not Halogen Free | N-CHANNEL | Standard | POWER CONTROL | SILICON | 1mA | 190 ns | 2.15V @ 15V, 200A | 600 ns | NPT | Yes | 14nF @ 25V | 1200V | 280A | ||||||||||||||||||||||||||||||||||||||||
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VII100-06P1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Chassis Mount, Screw | 2006 | yes | Obsolete | 1 (Unlimited) | 12 | RoHS Compliant | 12 | ECO-PAC2 | Chassis Mount | -40°C~150°C TJ | e4 | Gold (Au) - with Nickel (Ni) barrier | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | VII | 12 | Insulated Gate BIP Transistors | Not Qualified | 294W | 294W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 93A | 600V | 2.8V | MOTOR CONTROL | SILICON | 4.2nF | 1.4mA | 210 ns | 2.8V @ 15V, 100A | 490 ns | NPT | Yes | 20V | 4.2nF @ 25V | |||||||||||||||||||||||||||||||||||
| VS-GB100TS60NPBF | Vishay Semiconductor Diodes Division | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount, Screw | 2016 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | INT-A-Pak | Unknown | Chassis Mount | -40°C~150°C TJ | 390W | 390W | Half Bridge | NPN | Dual | Standard | 108A | 600V | 600V | 100μA | 2.6V | 2.85V @ 15V, 100A | NPT | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGT600SK60G | Microsemi Corporation | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 5 | EAR99 | RoHS Compliant | Lead Free | 5 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 2.3kW | 2300W | 1 | Single | ISOLATED | N-CHANNEL | 130 ns | Standard | 700A | 600V | 600V | POWER CONTROL | 250 ns | SILICON | 49nF | 750μA | 205 ns | 1.8V @ 15V, 600A | 400 ns | Trench Field Stop | No | 49nF @ 25V | ||||||||||||||||||||||||||||||||||||
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A1P25S12M3-F | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | ACTIVE (Last Updated: 7 months ago) | Active | 1 (Unlimited) | RoHS Compliant | Module | Chassis Mount | -40°C~150°C TJ | A1P25S12 | 197W | Three Phase Inverter | Standard | 100μA | 2.45V @ 15V, 25A | Trench Field Stop | Yes | 1550pF @ 25V | 1200V | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-GB75TP120N | Vishay Semiconductor Diodes Division | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Chassis Mount | 2015 | yes | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | INT-A-PAK (3 + 4) | Chassis Mount | 150°C TJ | Nickel (Ni) | 543W | 543W | Half Bridge | Standard | 150A | 1.2kV | 2.35V | 5.52nF | 5mA | 2.35V @ 15V, 75A | No | 5.52nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-GB400TH120N | Vishay Semiconductor Diodes Division | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Chassis Mount | 2015 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Double INT-A-PAK (3 + 4) | Chassis Mount | -40°C~150°C TJ | 2.604kW | 2604W | Half Bridge | Standard | 800A | 1.2kV | 1.9V | 32.7nF | 5mA | 1.9V @ 15V, 400A (Typ) | No | 32.7nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MUBW10-06A6 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | yes | Obsolete | 1 (Unlimited) | 25 | FAST | E1 | Chassis Mount | -40°C~150°C TJ | e3 | Matte Tin (Sn) | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | MUBW | 25 | NO | R-XUFM-X25 | Insulated Gate BIP Transistors | Not Qualified | 45W | 7 | Three Phase Inverter with Brake | ISOLATED | N-CHANNEL | 45W | Three Phase Bridge Rectifier | POWER CONTROL | SILICON | 20μA | 80 ns | 2.5V @ 15V, 6A | 325 ns | NPT | Yes | 20V | 0.435nF @ 25V | 2.5 V | 600V | 11A | ||||||||||||||||||||||||||||||||||||||
| F3L100R07W2E3B11BOMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 32 Weeks | 2002 | Active | Not Applicable | 14 | EAR99 | RoHS Compliant | Contains Lead | Module | Chassis Mount | -40°C~150°C | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NO | R-XUFM-X14 | 300W | 4 | Three Phase Inverter | ISOLATED | Not Halogen Free | N-CHANNEL | Standard | POWER CONTROL | SILICON | 1mA | 95 ns | 1.9V @ 15V, 100A | 345 ns | Trench Field Stop | Yes | 6.2nF @ 25V | 650V | 117A | |||||||||||||||||||||||||||||||||||||||||||||
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MIXA40WB1200TED | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Chassis Mount | Bulk | 2011 | yes | Active | 1 (Unlimited) | 24 | ROHS3 Compliant | UL RECOGNIZED | E2 | Chassis Mount | -40°C~125°C TJ | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 24 | R-XUFM-X24 | Insulated Gate BIP Transistors | Not Qualified | 195W | 7 | Three Phase Inverter with Brake | ISOLATED | N-CHANNEL | 195W | Three Phase Bridge Rectifier | 60A | 1.2kV | 2.1V | POWER CONTROL | SILICON | 2.1mA | 1.2kV | 110 ns | 2.1V @ 15V, 35A | 350 ns | PT | Yes | 20V | 1200V | |||||||||||||||||||||||||||||||||||||
| GA200SA60S | Vishay Semiconductor Diodes Division | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount, Screw | 2000 | Obsolete | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | Contains Lead | 100A | 4 | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | 600V | 630W | 630W | Single | Single | SOT-227B | Standard | 200A | 600V | 1.3V | 56ns | 16.25nF | 1mA | 1.3V @ 15V, 100A | No | 16.25nF @ 30V | 600V | 200A | |||||||||||||||||||||||||||||||||||||||||||||||||
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FP50R12KT4GBOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Screw | 2002 | no | Active | Not Applicable | 35 | EAR99 | RoHS Compliant | Contains Lead | 35 | Module | Chassis Mount | -40°C~150°C | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 35 | 280W | 7 | Three Phase Inverter | NPN | ISOLATED | Not Halogen Free | Standard | 50A | 1.2kV | POWER CONTROL | SILICON | 1mA | 107 ns | 2.15V @ 15V, 50A | 630 ns | Trench Field Stop | Yes | 2.8nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||
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FF650R17IE4D_B2 | Infineon | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Screw | no | 10 | 150°C | -40°C | RoHS Compliant | Contains Lead | 10 | Module | Unknown | NOT SPECIFIED | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 2 | ISOLATED | Not Halogen Free | N-CHANNEL | Dual | 4.15kW | 930A | 1.7kV | 1.7kV | POWER CONTROL | 2V | 765 ns | 1870 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXGN72N60A3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Chassis Mount, Screw | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | Lead Free | 4 | UL RECOGNIZED, LOW CONDUCTION LOSS | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | Nickel (Ni) | UPPER | UNSPECIFIED | IXG*72N60 | 4 | 360W | 1 | Single | ISOLATED | N-CHANNEL | 360W | Standard | 160A | 600V | 600V | POWER CONTROL | SILICON | 6.6nF | 75μA | 1.35V | 61 ns | 1.35V @ 15V, 60A | 885 ns | PT | No | 6.6nF @ 25V | ||||||||||||||||||||||||||||||||||||||
| FS20R06VE3B2BOMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 32 Weeks | 2015 | EasyPACK™ | Not For New Designs | 1 (Unlimited) | 15 | EAR99 | ROHS3 Compliant | Contains Lead | UL RECOGNIZED | Module | Chassis Mount | -40°C~150°C | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NO | R-XUFM-X15 | 71.5W | 6 | Three Phase Inverter | ISOLATED | Not Halogen Free | N-CHANNEL | Standard | POWER CONTROL | SILICON | 1mA | 32 ns | 2V @ 15V, 20A | 250 ns | Yes | 1.14nF @ 25V | 600V | 25A | ||||||||||||||||||||||||||||||||||||||||||||
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CM200DY-12NF | Powerex Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Chassis Mount | 2003 | IGBTMOD™ | yes | Discontinued | 1 (Unlimited) | 7 | RoHS Compliant | 200A | 7 | Module | Unknown | Chassis Mount | -40°C~150°C TJ | 600V | UPPER | UNSPECIFIED | 7 | Insulated Gate BIP Transistors | 650W | 2 | Half Bridge | ISOLATED | N-CHANNEL | 600W | Standard | 200A | 600V | 2.2V | MOTOR CONTROL | SILICON | 30nF | 1mA | 600V | 2.2V @ 15V, 200A | No | 20V | 30nF @ 10V | ||||||||||||||||||||||||||||||||||||||||||
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GSID100A120S5C1 | SemiQ | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Active | 1 (Unlimited) | ROHS3 Compliant | Module | Chassis Mount | -40°C~150°C TJ | 650W | Three Phase Inverter | Module | Standard | 1mA | 2.1V @ 15V, 100A | Yes | 13.7nF @ 25V | 1200V | 170A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FP10R12W1T4B11BOMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | 2002 | Active | Not Applicable | 23 | EAR99 | RoHS Compliant | Contains Lead | 23 | Module | No SVHC | Chassis Mount | -40°C~150°C | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NO | 105W | 7 | Three Phase Inverter | ISOLATED | Not Halogen Free | N-CHANNEL | Standard | 1.2kV | 1.85V | POWER CONTROL | SILICON | 1mA | 108 ns | 2.25V @ 15V, 10A | 500 ns | Yes | 600pF @ 25V | 1200V | 20A | ||||||||||||||||||||||||||||||||||||||||||
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MG12150S-BN2MM | Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Chassis Mount | 2014 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 7 | S-3 Module | Chassis Mount | 160.000002g | -40°C~125°C TJ | 625W | 625W | Half Bridge | NPN | Dual | Standard | 200A | 1.2kV | 1.7V | 10.5nF | 1mA | 1.7V | 1.7V @ 15V, 150A (Typ) | Trench Field Stop | No | 10.5nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGF180DA60TG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount, Screw | 2006 | yes | Obsolete | 1 (Unlimited) | 12 | EAR99 | 150°C | -40°C | RoHS Compliant | 20 | SP4 | Chassis Mount | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 12 | R-XUFM-X12 | Insulated Gate BIP Transistors | Not Qualified | 833W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 220A | 600V | 600V | MOTOR CONTROL | 8.6nF | 300μA | 51 ns | 2.5V @ 15V, 180A | 210 ns | NPT | Yes | 8.6nF @ 25V | 2.5 V | |||||||||||||||||||||||||||||||||||||
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GSID100A120S5C1 | Global Power | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | 2015 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HGT1N40N60A4D | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2001 | Obsolete | 1 (Unlimited) | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | 298W | Single | SOT-227B | Standard | 250μA | 2.7V @ 15V, 40A | No | 600V | 110A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGT30H60T3G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | 2006 | Obsolete | 1 (Unlimited) | 25 | RoHS Compliant | 3 | AVALANCHE RATED | SP3 | unknown | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 25 | R-XUFM-X25 | Insulated Gate BIP Transistors | Not Qualified | 90W | 90W | 4 | Full Bridge Inverter | ISOLATED | N-CHANNEL | Standard | 50A | 600V | 1.9V | POWER CONTROL | SILICON | 1.6nF | 250μA | 170 ns | 1.9V @ 15V, 30A | 310 ns | Trench Field Stop | Yes | 20V | 1.6nF @ 25V | ||||||||||||||||||||||||||||||||||||
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MG12300D-BN3MM | Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Chassis Mount, Screw | Bulk | 2014 | Obsolete | 1 (Unlimited) | 108mm | ROHS3 Compliant | Lead Free | 7 | D-3 Module | 30.5mm | 62mm | Chassis Mount | -40°C~125°C TJ | 1.45kW | 1450W | Half Bridge | Dual | 1.45kW | Standard | 450A | 1.2kV | 1.2kV | 22nF | 2mA | 3.2V | 3.2V @ 15V, 300A | No | 22nF @ 25V | 1200V |
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FS200R12KT4RBOSA1 Infineon Technologies
Trans IGBT Module N-CH 1.2KV 280A 35-pin ECONO3-4
Price: 0.0000
RFQ -
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VS-GB100TS60NPBF Vishay Semiconductor Diodes Division
IGBT Modules 108 Amp 600 Volt Half-Bridge
Price: 0.0000
RFQ -
APTGT600SK60G Microsemi Corporation
APTGT600SK60G datasheet pdf and Transistors - IGBTs - Modules product details from Microsemi Corporation stock available at Utmel
Price: 0.0000
RFQ -
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VS-GB400TH120N Vishay Semiconductor Diodes Division
IGBT 1200V 800A 2604W INT-A-PAK
Price: 0.0000
RFQ -
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FP50R12KT4GBOSA1 Infineon Technologies
Trans IGBT Module N-CH 1.2KV 50A 35-pin ECONO3-3
Price: 0.0000
RFQ -
FF650R17IE4D_B2 Infineon
INFINEON FF650R17IE4D_B2 IGBT Array & Module Transistor, N Channel, 650 A, 2 V, 4.15 kW, 1.7 kV, Module
Price: 0.0000
RFQ -
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FS20R06VE3B2BOMA1 Infineon Technologies
Trans IGBT Module N-CH 600V 25A 15-pin EASY750-1
Price: 0.0000
RFQ -
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FP10R12W1T4B11BOMA1 Infineon Technologies
FP10R12W1T4B11BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
RFQ -
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HGT1N40N60A4D ON Semiconductor
HGT1N40N60A4D datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available at HK JDW
Price: 0.0000
RFQ -
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