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IGBTs Modules
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IGBT module product filter
Common filter conditions include, manufacturer, configuration, collector maximum current, voltage, pin count, etc.
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 12 Weeks
- 14 Weeks
- 16 Weeks
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Panel, Screw
- Screw
Mounting Type
- Chassis Mount
Number of Pins
- 20
- 23
- 24
- 29
- 7
Number of Terminations
- 20
- 23
- 24
- 29
- 35
- 7
Operating Temperature
- -40°C~125°C
- -40°C~125°C TJ
- -40°C~150°C
- -40°C~150°C TJ
Package / Case
- Module
Part Status
- Active
- Not For New Designs
Pbfree Code
- no
- yes
Published
- 2001
- 2002
- 2014
Series
- C
Surface Mount
- NO
Transistor Element Material
- SILICON
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Mounting Type | Operating Temperature | Voltage - Rated DC | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | Case Connection | Halogen Free | Polarity/Channel Type | Collector Current-Max (IC) | Element Configuration | Supplier Device Package | Input | Reverse Voltage | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Transistor Element Material | Input Capacitance | Collector-Emitter Voltage-Max | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-GT300YH120N | Vishay Semiconductor Diodes Division | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Chassis Mount | 2015 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Double INT-A-PAK (3 + 8) | Chassis Mount | -40°C~150°C TJ | 1.042kW | 1042W | Half Bridge | Standard | 341A | 1.2kV | 2.17V | 36nF | 300μA | 2.17V @ 15V, 300A (Typ) | Trench | No | 36nF @ 30V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||
 |
DF1000R17IE4DB2BOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 50 Weeks | 2002 | Active | 1 (Unlimited) | EAR99 | Non-RoHS Compliant | Contains Lead | Module | Chassis Mount | -40°C~150°C | NOT SPECIFIED | NOT SPECIFIED | 6250W | Single | Not Halogen Free | Standard | 5mA | 2.45V @ 15V, 1000A | Yes | 81nF @ 25V | 1700V | |||||||||||||||||||||||||||||||||||||||||||||||||
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MUBW25-12A7 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Chassis Mount, Screw | Bulk | 2004 | yes | Active | 24 | ROHS3 Compliant | Lead Free | 25A | 2 | LOW SWITCHING LOSS, LOW SATURATION VOLTAGE | E2 | Chassis Mount | -40°C~125°C TJ | 1.6kV | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | MUBW | 24 | Not Qualified | 225W | 225W | 7 | Three Phase Inverter with Brake | ISOLATED | N-CHANNEL | Three Phase Bridge Rectifier | 1.6kV | 50A | 1.2kV | 2.7V | POWER CONTROL | SILICON | 1.65nF | 900μA | 90 ns | 2.7V @ 15V, 25A | 350 ns | NPT | Yes | 1.65nF @ 25V | 1200V | |||||||||||||||||||||||
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GSID080A120B1A5 | SemiQ | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Amp+™ | Active | ROHS3 Compliant | Module | Chassis Mount | -40°C~150°C | 1710W | Single | Module | Standard | 1mA | 2V @ 15V, 80A | Yes | 7nF @ 25V | 1200V | 160A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGLQ100DA120T1G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | 2013 | Active | RoHS Compliant | Module | Chassis Mount | -40°C~175°C TJ | 520W | Boost Chopper | SP1 | Standard | 50μA | 2.42V @ 15V, 100A | Trench Field Stop | Yes | 6.15nF @ 25V | 1200V | 170A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGF50A120TG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | yes | Discontinued | 1 (Unlimited) | 12 | RoHS Compliant | 4 | SP4 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 12 | R-XUFM-X12 | Not Qualified | 312W | 312W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Standard | 75A | 1.2kV | 3.7V | MOTOR CONTROL | SILICON | 3.45nF | 250μA | 100 ns | 3.7V @ 15V, 50A | 400 ns | NPT | Yes | 3.45nF @ 25V | 1200V | ||||||||||||||||||||||||||||||
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DF120R12W2H3B27BOMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | 2002 | Active | Not Applicable | Non-RoHS Compliant | Contains Lead | Module | Chassis Mount | -40°C~150°C | 180W | Three Phase Inverter | Not Halogen Free | Standard | 1mA | 2.4V @ 15V, 40A | Yes | 2.35nF @ 25V | 1200V | 50A | |||||||||||||||||||||||||||||||||||||||||||||||||||
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DF100R07W1H5FPB54BPSA2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | 2002 | EasyPACK™ | Active | 1 (Unlimited) | ROHS3 Compliant | Module | Chassis Mount | -40°C~150°C TJ | 20mW | 2 Independent | Standard | 40μA | 1.55V @ 15V, 25A | Trench Field Stop | Yes | 2.8nF @ 25V | 650V | 40A | |||||||||||||||||||||||||||||||||||||||||||||||||||
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CM100DUS-12F | Powerex Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | 2003 | IGBTMOD™ | yes | Discontinued | 1 (Unlimited) | 7 | RoHS Compliant | 7 | Module | Chassis Mount | -40°C~150°C TJ | UPPER | UNSPECIFIED | 7 | 350W | 350W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Standard | 100A | 600V | 2.7V | POWER CONTROL | SILICON | 27nF | 1mA | 2.7V @ 15V, 100A | Trench | No | 27nF @ 10V | |||||||||||||||||||||||||||||||||||||
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MIXA60W1200TED | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Chassis Mount | Bulk | 2010 | yes | Active | 1 (Unlimited) | 28 | ROHS3 Compliant | UL RECOGNIZED | E2 | Chassis Mount | -40°C~125°C TJ | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 28 | R-XUFM-X28 | Insulated Gate BIP Transistors | Not Qualified | 290W | 290W | 6 | Three Phase Inverter with Brake | ISOLATED | N-CHANNEL | Standard | 85A | 1.2kV | 2.1V | POWER CONTROL | SILICON | 500μA | 110 ns | 2.1V @ 15V, 55A | 350 ns | PT | Yes | 20V | 1200V | |||||||||||||||||||||||||||||
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PS3GFANSET30601NOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Active | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSM100GB170DLCHOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | yes | Obsolete | 1 (Unlimited) | 7 | EAR99 | RoHS Compliant | Module | compliant | Chassis Mount | -40°C~125°C | UPPER | UNSPECIFIED | 7 | NO | R-XUFM-X7 | 960W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Standard | SILICON | 200μA | 200 ns | 3.2V @ 15V, 100A | 930 ns | No | 7nF @ 25V | 1700V | 200A | |||||||||||||||||||||||||||||||||||||||||
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FF600R17ME4B11BOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | 2002 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | Contains Lead | Module | Chassis Mount | -40°C~150°C | NOT SPECIFIED | NOT SPECIFIED | 2 Independent | Not Halogen Free | Dual | Standard | 1mA | 2.3V @ 15V, 600A | Trench Field Stop | Yes | 48nF @ 25V | 1700V | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
MID75-12A3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Chassis Mount, Panel, Screw | Bulk | 2000 | yes | Active | 1 (Unlimited) | 5 | EAR99 | 94mm | ROHS3 Compliant | 7 | UL RECOGNIZED | Y4-M5 | 30mm | 34mm | Chassis Mount | -40°C~150°C TJ | UPPER | UNSPECIFIED | MID | 7 | R-XUFM-X5 | Insulated Gate BIP Transistors | 370W | 370W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 90A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 3.3nF | 4mA | 1.2kV | 170 ns | 2.7V @ 15V, 50A | 570 ns | NPT | No | 20V | 3.3nF @ 25V | 3 V | 1200V | ||||||||||||||||||||||
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MUBW10-06A6K | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Chassis Mount | 2009 | yes | Active | 1 (Unlimited) | 25 | ROHS3 Compliant | Lead Free | 1 | E1 | Chassis Mount | -40°C~150°C TJ | e3 | PURE TIN | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | MUBW | 25 | R-XUFM-X25 | Insulated Gate BIP Transistors | Not Qualified | 50W | 50W | 7 | Three Phase Inverter with Brake | ISOLATED | N-CHANNEL | Three Phase Bridge Rectifier | 1.6kV | 11A | 600V | 3.3V | POWER CONTROL | SILICON | 220pF | 65μA | 40 ns | 3.3V @ 15V, 10A | 320 ns | NPT | Yes | 20V | 0.22nF @ 25V | ||||||||||||||||||||||||
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APTGT150H60TG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 14 | EAR99 | RoHS Compliant | No | 20 | AVALANCHE RATED | SP4 | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 14 | R-XUFM-X14 | 480W | 480W | 4 | Full Bridge Inverter | ISOLATED | N-CHANNEL | Standard | 225A | 600V | 600V | POWER CONTROL | SILICON | 9.2nF | 250μA | 180 ns | 1.9V @ 15V, 150A | 370 ns | Trench Field Stop | Yes | 9.2nF @ 25V | |||||||||||||||||||||||||||||
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BSM10GD120DN2BOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Not For New Designs | 1 (Unlimited) | 17 | EAR99 | ROHS3 Compliant | UPPER | UNSPECIFIED | 17 | NO | R-XUFM-X17 | 150°C | Not Qualified | 6 | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 15A | SILICON | 1200V | 105 ns | 460 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
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FMS7G20US60S | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | yes | Obsolete | 3 (168 Hours) | 25 | ROHS3 Compliant | 25PM-AA | Chassis Mount | -40°C~150°C TJ | NOT SPECIFIED | UPPER | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 25 | NO | R-XUFM-P25 | COMMERCIAL | 89W | 7 | Three Phase Inverter with Brake | ISOLATED | N-CHANNEL | Single Phase Bridge Rectifier | MOTOR CONTROL | SILICON | 250μA | 170 ns | 2.7V @ 15V, 20A | 320 ns | Yes | 1.277nF @ 30V | 600V | 20A | |||||||||||||||||||||||||||||||||||||
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FMG2G50US60 | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 7PM-GA | Chassis Mount | -40°C~150°C TJ | 250W | Half Bridge | 7PM-GA | Standard | 250μA | 2.8V @ 15V, 50A | No | 3.46nF @ 30V | 600V | 50A |
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DF1000R17IE4DB2BOSA1 Infineon Technologies
DF1000R17IE4DB2BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Utmel
Price: 0.0000
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FF600R17ME4B11BOSA1 Infineon Technologies
IGBT Modules EconoDUAL 3 1700V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode, NTC and PressFIT Contact Technology
Price: 0.0000
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BSM10GD120DN2BOSA1 Infineon Technologies
BSM10GD120DN2BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
RFQ -
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