Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Polarity | Case Connection | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Continuous Drain Current (ID) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RGT00TS65DGC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 17 Weeks | 2016 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 277W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 54ns | POWER CONTROL | SILICON | 110 ns | 2.1V @ 15V, 50A | 225 ns | Trench Field Stop | 650V | 85A | 400V, 50A, 10 Ω, 15V | 94nC | 150A | 42ns/137ns | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRGB4607DPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Through Hole | Tube | 2013 | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.67mm | RoHS Compliant | 3 | TO-220-3 | No SVHC | 16.51mm | 4.83mm | Through Hole | 2.299997g | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 58W | 58W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 48 ns | 11A | 600V | 2.05V | POWER CONTROL | SILICON | 1.75V | 51 ns | 2.05V @ 15V, 4A | 95 ns | 400V, 4A, 100 Ω, 15V | 9nC | 12A | 27ns/120ns | 140μJ (on), 62μJ (off) | ||||||||||||||||||||||||||||||||||||||||
 |
IXYA20N65C3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | 2015 | XPT™, GenX3™ | Active | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | compliant | Surface Mount | -55°C~175°C TJ | Standard | 230W | 34ns | 2.5V @ 15V, 20A | 650V | 20A | 400V, 20A, 20 Ω, 15V | 30nC | 105A | 19ns/80ns | 430μJ (on), 650μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRGS4610DTRLPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 260.39037mg | -40°C~175°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | Insulated Gate BIP Transistors | 77W | N-CHANNEL | Single | 74 ns | 10A | 600V | 2V | 2.14V | 2V @ 15V, 6A | 20V | 16A | 6.5V | 400V, 6A, 47 Ω, 15V | 13nC | 18A | 27ns/75ns | 56μJ (on), 122μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGT30N60B | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2000 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | 3 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*30N60 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 200W | 200W | 1 | COLLECTOR | N-CHANNEL | Single | 60A | 600V | 600V | POWER CONTROL | SILICON | 25 ns | 1.8V @ 15V, 30A | 200 ns | 20V | 5V | 480V, 30A, 4.7 Ω, 15V | 125nC | 120A | 25ns/130ns | 1.3mJ (off) | |||||||||||||||||||||||||||||||||||||
 |
SGP10N60RUFDTU | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | ACTIVE (Last Updated: 1 week ago) | Through Hole | Tube | 2013 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 10A | No | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | TO-220-3 | Through Hole | 1.8g | -55°C~150°C TJ | 600V | Standard | 8541.29.00.95 | e3 | Tin (Sn) | SG*10N60 | R-PSFM-T3 | Insulated Gate BIP Transistors | 208W | 1 | TO-220AB | N-CHANNEL | Single | 75W | 600V | 42 ns | 16A | 600V | 600V | MOTOR CONTROL | SILICON | 2.2V | 49 ns | 2.8V @ 15V, 10A | 284 ns | 20V | 8V | 220ns | 300V, 10A, 20 Ω, 15V | 30nC | 30A | 15ns/36ns | 141μJ (on), 215μJ (off) | |||||||||||||||||||||||||||||||
 |
FGHL40S65UQ | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | yes | Active | Not Applicable | ROHS3 Compliant | TO-247-3 Variant | Through Hole | -55°C~175°C TJ | Standard | 231W | 319ns | 1.7V @ 15V, 40A | Trench Field Stop | 650V | 80A | 400V, 40A, 6 Ω, 15V | 306nC | 120A | 32ns/260ns | 1.76mJ (on), 362μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGP10NB37LZ | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | PowerMESH™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 20A | No | VOLTAGE CLAMPING | TO-220-3 | Through Hole | -65°C~175°C TJ | Standard | e3 | Matte Tin (Sn) | STGP10 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 125W | 1 | TO-220AB | N-CHANNEL | Single | 125W | 1.3 μs | 20A | 440V | 1.8V | 20A | AUTOMOTIVE IGNITION | 9.2 μs | SILICON | 1.8V | 860 ns | 1.8V @ 4.5V, 10A | 17800 ns | 2.4V | 328V, 10A, 1k Ω, 5V | 28nC | 40A | 1.3μs/8μs | 2.4mJ (on), 5mJ (off) | ||||||||||||||||||||||||||||||||||||
 |
NGTB50N60FL2WG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | LAST SHIPMENTS (Last Updated: 4 days ago) | Through Hole | Tube | 2014 | yes | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | e3 | Tin (Sn) | Insulated Gate BIP Transistors | 417W | 417W | N-CHANNEL | Single | 94 ns | 100A | 600V | 2V | 2V @ 15V, 50A | Trench Field Stop | 20V | 6.5V | 400V, 50A, 10 Ω, 15V | 220nC | 200A | 100ns/237ns | 1.5mJ (on), 460μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
|
IRG8CH42K10F | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Bulk | Obsolete | Not Applicable | RoHS Compliant | Die | Surface Mount | -40°C~175°C TJ | Standard | Insulated Gate BIP Transistors | N-CHANNEL | 1.2kV | 2V | 2V @ 15V, 40A | 30V | 1200V | 6.5V | 600V, 40A, 5 Ω, 15V | 230nC | 40ns/240ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SIGC12T60SNCX7SA2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 2.5V @ 15V, 10A | NPT | 600V | 10A | 400V, 10A, 25Ohm, 15V | 30A | 29ns/266ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RJH60F6BDPQ-A0#T0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2012 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | 150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | RJH60F | 3 | Insulated Gate BIP Transistors | 297.6W | 297.6W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 25 ns | 85A | 600V | 1.75V | POWER CONTROL | SILICON | 138 ns | 1.75V @ 15V, 45A | 205 ns | Trench | 8V | 400V, 30A, 5 Ω, 15V | 58ns/131ns | |||||||||||||||||||||||||||||||||||||||||||
 |
IXGX300N60B3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Active | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
NGTD28T65F2SWK | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | Tape & Reel (TR) | 2016 | yes | Active | ROHS3 Compliant | Die | Surface Mount | -55°C~175°C TJ | Standard | 2V @ 15V, 75A | Trench Field Stop | 650V | 200A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SGW50N60HSFKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 2009 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-247-3 | compliant | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 416W | 1 | SINGLE | TO-247AD | COLLECTOR | N-CHANNEL | MOTOR CONTROL | SILICON | 79 ns | 3.15V @ 15V, 50A | 370 ns | NPT | 600V | 100A | 400V, 50A, 6.8 Ω, 15V | 179nC | 150A | 47ns/310ns | 1.96mJ | |||||||||||||||||||||||||||||||||||||||||||||
|
IXYP20N65B3D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 24 Weeks | XPT™, GenX3™ | Active | TO-220-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 230W | 25ns | 2.1V @ 15V, 20A | PT | 650V | 58A | 400V, 20A, 20 Ω, 15V | 29nC | 108A | 12ns/103ns | 500μJ (on), 450μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
APT30GN60BDQ2G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 25 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 63A | No | TO-247-3 | Through Hole | -55°C~175°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 203W | 1 | COLLECTOR | N-CHANNEL | Single | 63A | 600V | 600V | POWER CONTROL | SILICON | 26 ns | 1.9V @ 15V, 30A | 255 ns | Trench Field Stop | 30V | 6.5V | 400V, 30A, 4.3 Ω, 15V | 165nC | 90A | 12ns/155ns | 525μJ (on), 700μJ (off) | |||||||||||||||||||||||||||||||||||||||
|
IKW40N60H3FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2010 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 306W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 124ns | POWER CONTROL | SILICON | 48 ns | 2.4V @ 15V, 40A | 249 ns | Trench Field Stop | 600V | 80A | 400V, 40A, 7.9 Ω, 15V | 223nC | 160A | 19ns/197ns | 1.68mJ | ||||||||||||||||||||||||||||||||||||||||||
 |
AOK50B65H1 | Alpha & Omega Semiconductor Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 18 Weeks | Alpha IGBT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 375W | 261ns | 2.4V @ 15V, 50A | 650V | 100A | 400V, 50A, 6 Ω, 15V | 76nC | 150A | 37ns/141ns | 1.92mJ (on), 850μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SGS23N60UFDTU | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | ACTIVE, NOT REC (Last Updated: 14 hours ago) | Through Hole | Tube | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 12A | No | 3 | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | TO-220-3 Full Pack | Through Hole | 2.27g | -55°C~150°C TJ | 600V | Standard | 8541.29.00.95 | e3 | Tin (Sn) | SG*23N60 | 73W | 1 | ISOLATED | N-CHANNEL | Single | 73W | 60ns | 23A | 600V | 600V | MOTOR CONTROL | SILICON | 2.1V | 55 ns | 2.6V @ 15V, 12A | 320 ns | 300V, 12A, 23 Ω, 15V | 49nC | 92A | 17ns/60ns | 115μJ (on), 135μJ (off) | |||||||||||||||||||||||||||||||||||||
 |
STGFL6NC60D | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Through Hole | Tube | PowerMESH™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) - annealed | STGFL6 | 3 | Insulated Gate BIP Transistors | 22W | 22W | 1 | TO-220AB | ISOLATED | N-CHANNEL | Single | 6.7 ns | 30 ns | 7A | 600V | 600V | POWER CONTROL | 67 ns | SILICON | 10.5 ns | 2.9V @ 15V, 3A | 122 ns | 20V | 5.75V | 390V, 3A, 10 Ω, 15V | 12nC | 25A | 6.7ns/46ns | 46.5μJ (on), 23.5μJ (off) | ||||||||||||||||||||||||||||||||||||||
 |
MGP15N40CL | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Bulk | 2005 | no | Obsolete | 1 (Unlimited) | 3 | Non-RoHS Compliant | Contains Lead | 15A | 3 | VOLTAGE CLAMPING | TO-220-3 | not_compliant | Through Hole | -55°C~175°C TJ | 410V | Logic | e0 | Tin/Lead (Sn/Pb) | 240 | 30 | 3 | Insulated Gate BIP Transistors | Not Qualified | 150W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 150W | 15A | 440V | 440V | AUTOMOTIVE IGNITION | SILICON | 4.5ns | 10V | 6000 ns | 2.9V @ 4V, 25A | 20500 ns | 22V | 2.1V | 300V, 6.5A, 1k Ω | 50A | -/4μs | ||||||||||||||||||||||||||||||||||||
|
AUIRGS30B60KTRL | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 9 Weeks | Tape & Reel (TR) | 2004 | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 370W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 370W | 39ns | MOTOR CONTROL | SILICON | 74 ns | 2.35V @ 15V, 30A | 237 ns | NPT | 20V | 600V | 78A | 5.5V | 42ns | 400V, 30A, 10 Ω, 15V | 102nC | 120A | 46ns/185ns | 350μJ (on), 825μJ (off) | ||||||||||||||||||||||||||||||||||||||
 |
IXGR35N120B | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2001 | HiPerFAST™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | ISOPLUS247™ | No SVHC | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | NOT SPECIFIED | NOT SPECIFIED | IXG*35N120 | 3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 1 | NPN | ISOLATED | Single | 200W | 70A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 160ns | 3.3V | 86 ns | 3.3V @ 15V, 35A | 660 ns | PT | 20V | 1200V | 5V | 960V, 35A, 4.7 Ω, 15V | 170nC | 140A | 50ns/180ns | 3.8mJ (off) | ||||||||||||||||||||||||||||||||
|
FGPF70N33BTTU | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | Obsolete | 1 (Unlimited) | RoHS Compliant | 3 | TO-220-3 Full Pack | Through Hole | 2.27g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 48W | Single | 330V | 330V | 1.7V @ 15V, 70A | Trench | 49nC | 220A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FGA180N30DTU | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | yes | Obsolete | 3 (168 Hours) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-3P-3, SC-65-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | e3 | MATTE TIN | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 2 | NO | R-PSFM-T3 | COMMERCIAL | 480W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 21ns | MOTOR CONTROL | SILICON | 260 ns | 1.4V @ 15V, 40A | 330 ns | 300V | 180A | 185nC | 450A | ||||||||||||||||||||||||||||||||||||||||||||||||
|
IKW15N120T2FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tube | 2006 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 235W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 300ns | POWER CONTROL | SILICON | 61 ns | 2.2V @ 15V, 15A | 626 ns | Trench | 1200V | 30A | 600V, 15A, 41.8 Ω, 15V | 93nC | 60A | 32ns/362ns | 2.05mJ | ||||||||||||||||||||||||||||||||||||||||
 |
APT45GP120B2DQ2G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 33 Weeks | Through Hole | Tube | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | 21.46mm | RoHS Compliant | Lead Free | 113A | No | 3 | TO-247-3 Variant | 5.31mm | 16.26mm | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | TIN SILVER COPPER | 3 | Insulated Gate BIP Transistors | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 113A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 3.3V | 47 ns | 3.9V @ 15V, 45A | 230 ns | PT | 1200V | 113A | 6V | 600V, 45A, 5 Ω, 15V | 185nC | 170A | 18ns/100ns | 900μJ (on), 905μJ (off) | |||||||||||||||||||||||||||||||||||
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IHY15N120R3XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2009 | TrenchStop® | yes | Obsolete | 1 (Unlimited) | 3 | TO-247-3 Variant | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 254W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | POWER CONTROL | SILICON | 1.7V @ 15V, 15A | 460 ns | Trench | 1200V | 30A | 600V, 15A, 14.6 Ω, 15V | 165nC | 45A | -/300ns | 700μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGH12N60BD1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2000 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*12N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 100W | 100W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 35 ns | 24A | 600V | 600V | POWER CONTROL | SILICON | 2.1V @ 15V, 12A | 20V | 5V | 270ns | 480V, 12A, 18 Ω, 15V | 32nC | 48A | 20ns/150ns | 500μJ (off) |
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