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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Height Width Mfr Mounting Type Weight Operating Temperature Technology Operating Mode Current Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Frequency Range JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Voltage Number of Elements Configuration Diode Type Polarity Case Connection Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Feedback Cap-Max (Crss) Transistor Type Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Collector Emitter Saturation Voltage Channel Type Current - Max Voltage - Isolation Voltage - Peak Reverse (Max) Resistance @ If, F Capacitance Ratio Condition Q @ Vr, F DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Reverse Recovery Time (trr) Package Product Status
VN2224N3-G VN2224N3-G Microchip Technology 0.0000
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0.00000000 download 20 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-226-3, TO-92-3 (TO-226AA) Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 1 Single 1W 6 ns 1W Tc 540mA SWITCHING 65 ns SILICON N-Channel 1.25 Ω @ 2A, 10V 3V @ 5mA 350pF @ 25V 20V 240V 0.54A 540mA Tj 5V 10V ±20V
TP2104N3-G-P003 TP2104N3-G-P003 Microchip Technology 0.8800
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0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM 1 1 Single 4 ns 740mW Ta 175mA SWITCHING 6Ohm 5 ns SILICON P-Channel 6 Ω @ 500mA, 10V 2V @ 1mA 60pF @ 25V 4ns 5 ns 20V -40V 175mA Tj 40V 4.5V 10V ±20V
KVX2152-23-0/TR KVX2152-23-0/TR Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C Single SOT-23-3 1.3pF @ 20V, 1MHz 22 V - 600 @ 4V, 50MHz
TC8020K6-G-M937 TC8020K6-G-M937 Microchip Technology 0.0000
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0.00000000 download 20 Weeks Surface Mount Tape & Reel (TR) 2012 yes Active 3 (168 Hours) 56 ROHS3 Compliant 56-VFQFN Exposed Pad Surface Mount 191.387631mg -55°C~150°C TJ ENHANCEMENT MODE QUAD NO LEAD 12 6 COMPLEX N-CHANNEL AND P-CHANNEL 10 ns 3.2A SWITCHING 8Ohm 200V METAL-OXIDE SEMICONDUCTOR 20 ns SILICON 6 N and 6 P-Channel 8 Ω @ 1A, 10V 2.4V @ 1mA 50pF @ 25V 15ns 15 ns Standard 200V
VRF151G VRF151G Microchip Technology 0.0000
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SG2823J-883B SG2823J-883B Microchip Technology 0.0000
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0.00000000 download 14 Weeks IN PRODUCTION (Last Updated: 1 month ago) Through Hole Tube 1997 no Active 1 (Unlimited) 18 EAR99 RoHS Compliant Contains Lead Yes 18 LOGIC LEVEL COMPATIBLE CDIP not_compliant Through Hole 150°C TJ e0 TIN LEAD DUAL NOT SPECIFIED NOT SPECIFIED 18 Not Qualified MIL 8 NPN 18-CDIP 500mA 95V 95V AMPLIFIER SILICON 8 NPN Darlington 1.6V 1000 @ 350mA 2V 1.6V @ 500μA, 350mA
VRF154FL VRF154FL Microchip Technology 0.0000
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MPP4201-206/TR MPP4201-206/TR Microchip Technology 0.0000
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0.00000000 - 0402 (1005 Metric) Microchip Technology -55°C ~ 150°C PIN - Single 0402 0.2pF @ 10V, 1MHz 70V 2.5Ohm @ 20mA, 100MHz
2N3872 2N3872 Microchip Technology 0.0000
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0.00000000 * Microchip Technology Bulk Active
VP2110K1-G VP2110K1-G Microchip Technology 0.0000
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0.00000000 download 5 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant Tin No 3 LOW THRESHOLD TO-236-3, SC-59, SOT-23-3 950μm 1.3mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 40 1 Other Transistors 1 Single 360mW 4 ns 360mW Ta 120mA SWITCHING 5 ns SILICON P-Channel 12 Ω @ 500mA, 10V 3.5V @ 1mA 60pF @ 25V 5ns 5 ns 20V -100V 120mA Tj 100V 8 pF 5V 10V ±20V
1N4944/TR 1N4944/TR Microchip Technology 0.0000
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0.00000000 - A, Axial Microchip Technology Through Hole Standard - Fast Recovery =< 500ns, > 200mA (Io) 1 μA @ 400 V 1.3 V @ 1 A -65°C ~ 175°C 400 V 1A 35pF @ 12V, 1MHz 150 ns
GMP4232-GM1/TR GMP4232-GM1/TR Microchip Technology 0.0000
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0.00000000 GIGAMITE? 0805 (2012 Metric) Microchip Technology -55°C ~ 125°C PIN - Single 0805 0.35pF @ 50V, 1MHz 300V 1Ohm @ 20mA, 100MHz
GMP4232-GM1 GMP4232-GM1 Microchip Technology 0.0000
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0.00000000 download Tape and Reel Active RoHS Compliant Attenuator|Switch 2 SHF
KVX38S2-23-0 KVX38S2-23-0 Microchip Technology 0.0000
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0.00000000 download Tape and Reel RoHS Compliant VCO 3 Single
TN0620N3-G-P014 TN0620N3-G-P014 Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Tape & Box (TB) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM O-PBCY-T3 1 1 Single 10 ns 1W Tc 250mA SWITCHING 6Ohm 200V 20 ns SILICON N-Channel 6 Ω @ 500mA, 10V 1.6V @ 1mA 150pF @ 25V 8ns 20 ns 20V 0.25A 250mA Tj 200V 35 pF 5V 10V ±20V
VP2206N3-G VP2206N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 1998 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 1 Single 1W 4 ns 740mW Tc 640mA SWITCHING 0.9Ohm 16 ns SILICON P-Channel 900m Ω @ 3.5A, 10V 3.5V @ 10mA 450pF @ 25V 16ns 22 ns 20V -60V 0.64A 640mA Tj 60V 40 pF 5V 10V ±20V
KVX2132-23-0/TR KVX2132-23-0/TR Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C Single SOT-23-3 4.2pF @ 0V, 1MHz 22 V - 850 @ 4V, 50MHz
GMP4212-GM1/TR GMP4212-GM1/TR Microchip Technology 0.0000
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0.00000000 GIGAMITE? 0805 (2012 Metric) Microchip Technology -55°C ~ 125°C PIN - Single 0805 0.25pF @ 10V, 1MHz 100V 1.5Ohm @ 20mA, 100MHz
TP5335K1-G TP5335K1-G Microchip Technology 0.0000
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0.00000000 download 20 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 LOW THRESHOLD TO-236-3, SC-59, SOT-23-3 1.12mm Surface Mount 1.437803g -55°C~150°C MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed DUAL GULL WING 260 40 1 Other Transistors Not Qualified 1 Single 360mW 20 ns 360mW Ta -85mA 150°C SWITCHING 25 ns SILICON P-Channel 30 Ω @ 200mA, 10V 2.4V @ 1mA 110pF @ 25V 15ns 15 ns 20V -350V 0.085A 85mA Tj 350V 22 pF 4.5V 10V ±20V
VP2450N8-G VP2450N8-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2007 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant No 4 TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) FLAT 260 40 R-PSSO-F3 1 1 DRAIN Single 1.6W 10 ns 1.6W Ta 160mA SWITCHING 45 ns SILICON P-Channel 30 Ω @ 100mA, 10V 3.5V @ 1mA 190pF @ 25V 25ns 25 ns 20V -500V 160mA Tj 500V 0.8A 4.5V 10V ±20V
VN2450N8-G VN2450N8-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Tin 3 FAST SWITCHING TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FLAT 260 40 1 FET General Purpose Power Not Qualified 1 DRAIN Single 1.6W 10 ns 1.6W Ta 250mA SWITCHING 25 ns SILICON N-Channel 13 Ω @ 400mA, 10V 4V @ 1mA 150pF @ 25V 10ns 10 ns 20V 500V 0.25A 250mA Tj 0.75A 4.5V 10V ±20V
0912GN-300V 0912GN-300V Microchip Technology 0.0000
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MPP4202-206/TR MPP4202-206/TR Microchip Technology 0.0000
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0.00000000 - 0402 (1005 Metric) Microchip Technology -55°C ~ 150°C PIN - Single 0402 0.15pF @ 10V, 1MHz 50V 2.8Ohm @ 20mA, 100MHz
GMP4215-GM1 GMP4215-GM1 Microchip Technology 0.0000
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0.00000000 download Tape and Reel Active RoHS Compliant Attenuator|Switch 2 SHF
ARF301 ARF301 Microchip Technology 0.0000
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0.00000000 download RoHS Compliant 6 P
MSCSM120SKM11CT3AG MSCSM120SKM11CT3AG Microchip Technology 0.0000
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0.00000000 - Module Microchip Technology Chassis Mount 254 A MOSFET 1.2 kV 1 Phase 4000Vrms
VN2106N3-G VN2106N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2001 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Tin No 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 BOTTOM 1 1 Single 1W 3 ns 1W Tc 300mA SWITCHING 4Ohm 6 ns SILICON N-Channel 4 Ω @ 500mA, 10V 2.4V @ 1mA 50pF @ 25V 5ns 5 ns 20V 60V 300mA Tj 5 pF 5V 10V ±20V
LXP1004-23-2 LXP1004-23-2 Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology -55°C ~ 125°C PIN - 1 Pair Series Connection SOT-23-3 0.75pF @ 20V, 1MHz 10 mA 20V 600mOhm @ 10mA, 100MHz
VN0808L-G VN0808L-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2009 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 1 Single 1W 1W Tc 300mA SWITCHING 4Ohm SILICON N-Channel 4 Ω @ 1A, 10V 2V @ 1mA 50pF @ 25V 30V 80V 300mA Tj 10V ±30V
GMP4202-GM1/TR GMP4202-GM1/TR Microchip Technology 0.0000
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0.00000000 GIGAMITE? 0805 (2012 Metric) Microchip Technology -55°C ~ 125°C PIN - Single 0805 0.25pF @ 10V, 1MHz 75V 1Ohm @ 20mA, 100MHz
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