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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Diameter Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mfr Mounting Type Weight Operating Temperature Technology Operating Mode Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Frequency Range Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration Diode Type JEDEC-95 Code Case Connection Element Configuration Power Dissipation Turn On Delay Time Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Power Dissipation-Max Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Max Voltage - Off State Voltage - Peak Reverse (Max) Resistance @ If, F Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Current - Off State (Max) Current - On State (It (AV)) (Max) Reverse Recovery Time (trr)
VRF151G VRF151G Microchip Technology 0.0000
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ARF1500 ARF1500 Microchip Technology 0.0000
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2N2329S 2N2329S Microchip Technology 0.0000
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0.00000000 - TO-205AD, TO-39-3 Metal Can Microchip Technology Through Hole -65°C ~ 125°C TO-39 400 V 2 mA 800 mV 15A @ 60Hz 200 μA Standard Recovery 10 μA 220 mA
TN5325K1-G TN5325K1-G Microchip Technology 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant Lead Free 3 LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD TO-236-3, SC-59, SOT-23-3 950μm 1.3mm Surface Mount 1.437803g -55°C~150°C TA MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 40 1 FET General Purpose Power Not Qualified 1 Single 360mW 20 ns 360mW Ta 150mA SWITCHING 7Ohm 25 ns SILICON N-Channel 7 Ω @ 1A, 10V 2V @ 1mA 110pF @ 25V 15ns 15 ns 20V 250V 150mA Ta 4.5V 10V ±20V
GC4701-6LP GC4701-6LP Microchip Technology 0.0000
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0.00000000 download Tape and Reel Preliminary RoHS Compliant 6 X Single Dual Anode
UM6202B UM6202B Microchip Technology 0.0000
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0.00000000 download Active 1.78(Max) RoHS non-compliant Attenuator|Switch 2 UHF Single
2N2323A 2N2323A Microchip Technology 0.0000
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MPP4201-206 MPP4201-206 Microchip Technology 0.0000
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0.00000000 - 0402 (1005 Metric) Microchip Technology -55°C ~ 150°C PIN - Single 0402 0.2pF @ 10V, 1MHz 70V 2.5Ohm @ 20mA, 100MHz
LXP1002-23-4 LXP1002-23-4 Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology -55°C ~ 125°C PIN - 1 Pair Series Connection SOT-23-3 0.32pF @ 50V, 1MHz 100 mA 50V 4Ohm @ 100mA, 100MHz
LND150K1-G LND150K1-G Microchip Technology 0.0000
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0.00000000 download 5 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) 3 EAR99 3.04mm ROHS3 Compliant Lead Free Tin No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.02mm 1.4mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) e3 DUAL GULL WING 260 40 1 Single 360mW 90 ns 360mW Ta 13mA SWITCHING 100 ns SILICON N-Channel 1000 Ω @ 500μA, 0V 10pF @ 25V 450ns 1.3 μs 20V 500V Depletion Mode 13mA Tj 0V ±20V
MPP4201-206/TR MPP4201-206/TR Microchip Technology 0.0000
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0.00000000 - 0402 (1005 Metric) Microchip Technology -55°C ~ 150°C PIN - Single 0402 0.2pF @ 10V, 1MHz 70V 2.5Ohm @ 20mA, 100MHz
GA201AE3 GA201AE3 Microchip Technology 0.0000
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MSC050SDA120BCT MSC050SDA120BCT Microchip Technology 0.0000
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0.00000000 - TO-247-3 Microchip Technology Through Hole Silicon Carbide Schottky TO-247-3 No Recovery Time > 500mA (Io) 200 μA @ 1200 V 1.8 V @ 50 A -55°C ~ 175°C 1200 V 109A 246pF @ 400V, 1MHz 0 ns
DN3765K4-G DN3765K4-G Microchip Technology 0.0000
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0.00000000 download 8 Weeks Surface Mount Tape & Reel (TR) 2008 Active 3 (168 Hours) 2 EAR99 6.73mm ROHS3 Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.1mm Surface Mount 3.949996g -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) GULL WING 260 NOT SPECIFIED R-PSSO-G2 1 Not Qualified 1 DRAIN Single 2.5W 50 ns 2.5W Ta 300mA SWITCHING 8Ohm 75 ns SILICON N-Channel 8 Ω @ 150mA, 0V 825pF @ 25V 75ns 100 ns 20V 650V Depletion Mode 300mA Tj 0.5A 0V ±20V
VN2224N3-G VN2224N3-G Microchip Technology 0.0000
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0.00000000 download 20 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-226-3, TO-92-3 (TO-226AA) Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 1 Single 1W 6 ns 1W Tc 540mA SWITCHING 65 ns SILICON N-Channel 1.25 Ω @ 2A, 10V 3V @ 5mA 350pF @ 25V 20V 240V 0.54A 540mA Tj 5V 10V ±20V
VN10KN3-G-P014 VN10KN3-G-P014 Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Tape & Box (TB) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM NOT SPECIFIED NOT SPECIFIED O-PBCY-T3 1 FET General Purpose Power 1 Single 1W Tc 310mA SWITCHING 5Ohm 60V SILICON N-Channel 5 Ω @ 500mA, 10V 2.5V @ 1mA 60pF @ 25V 30V 310mA Tj 60V 5 pF 5V 10V ±30V
TP2520N8-G TP2520N8-G Microchip Technology 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free Tin No 4 LOGIC LEVEL COMPATIBLE, LOW THRESHOLD TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FLAT 260 40 R-PSSO-F3 1 Other Transistors 1 DRAIN Single 1.6W 10 ns 1.6W Ta 260mA SWITCHING 20 ns SILICON P-Channel 12 Ω @ 200mA, 10V 2.4V @ 1mA 125pF @ 25V 15ns 15 ns 20V -200V 0.26A 260mA Tj 200V 2A 4.5V 10V ±20V
TN0110N3-G TN0110N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2011 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free No 3 LOGIC LEVEL COMPATIBLE TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 FET General Purpose Power 1 Single 1W 2 ns 1W Tc 350mA SWITCHING 3Ohm 6 ns SILICON N-Channel 3 Ω @ 500mA, 10V 2V @ 500μA 60pF @ 25V 3ns 3 ns 20V 100V 350mA Tj 8 pF 4.5V 10V ±20V
TN2501N8-G TN2501N8-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant 4 LOGIC LEVEL COMPATIBLE, LOW THRESHOLD TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) FLAT 260 40 R-PSSO-F3 1 Not Qualified 1 DRAIN Single 1.6W 5 ns 1.6W Tc 400mA SWITCHING 15 ns SILICON N-Channel 2.5 Ω @ 200mA, 3V 1V @ 1mA 110pF @ 15V 15ns 15 ns 15V 18V 400mA Tj 0.56A 1.2V 3V ±20V
VN2222LL-G-P013 VN2222LL-G-P013 Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Tape & Box (TB) 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM O-PBCY-T3 1 SINGLE WITH BUILT-IN DIODE 400mW Ta 1W Tc 230mA SWITCHING 60V SILICON N-Channel 7.5 Ω @ 500mA, 10V 2.5V @ 1mA 60pF @ 25V 0.23A 230mA Tj 60V 8 pF 5V 10V ±30V
VN2450N3-G VN2450N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm 13Ohm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) BOTTOM NOT APPLICABLE NOT APPLICABLE 1 Not Qualified Single 1W 10 ns 1W Ta 200mA 25 ns N-Channel 13 Ω @ 400mA, 10V 4V @ 1mA 150pF @ 25V 10ns 20 ns 20V 500V 200mA Tj 4.5V 10V ±20V
MIC94052BC6-TR MIC94052BC6-TR Microchip Technology 0.0000
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0.00000000 download Tape & Reel (TR) 2005 Discontinued 1 (Unlimited) 6 EAR99 Non-RoHS Compliant 6-TSSOP, SC-88, SOT-363 not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn85Pb15) DUAL GULL WING MIC94052 6 YES R-PDSO-G6 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE AND RESISTOR 270mW Ta SWITCHING 0.18Ohm 6V SILICON P-Channel 84m Ω @ 100mA, 4.5V 1.2V @ 250μA 2A 2A Ta 6V 1.8V 4.5V
TP2502N8-G TP2502N8-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2008 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant 4 LOGIC LEVEL COMPATIBLE TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) FLAT 260 40 R-PSSO-F3 Not Qualified 1 DRAIN Single 1.6W 10 ns 1.6W Ta 630mA SWITCHING 2Ohm 15 ns SILICON P-Channel 2 Ω @ 1A, 10V 2.4V @ 1mA 125pF @ 20V 11ns 11 ns 20V -20V 0.63A 630mA Tj 3.3A 5V 10V ±20V
LND150N3-G-P003 LND150N3-G-P003 Microchip Technology 0.0000
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0.00000000 download 8 Weeks Through Hole Tape & Reel (TR) 2014 yes Active 1 (Unlimited) 3 5.21mm ROHS3 Compliant Tin 3 TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) BOTTOM 1 1 Single 90 ns 740mW Ta 30mA SWITCHING 100 ns SILICON N-Channel 1000 Ω @ 500μA, 0V 10pF @ 25V 450ns 1.3 μs 20V 500V Depletion Mode 30mA Tj 0V ±20V
TP2104N3-G TP2104N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM NOT APPLICABLE NOT APPLICABLE 1 Not Qualified 1 Single 740mW 4 ns 740mW Ta -250mA SWITCHING 6Ohm 5 ns SILICON P-Channel 6 Ω @ 500mA, 10V 2V @ 1mA 60pF @ 25V 4ns 4 ns 20V -40V 175mA Tj 40V 4.5V 10V ±20V
TP5322K1-G TP5322K1-G Microchip Technology 0.0000
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0.00000000 download 5 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant 3 LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 950μm 1.3mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 40 1 Not Qualified 1 Single 360mW 10 ns 360mW Ta 120mA SWITCHING 20 ns SILICON P-Channel 12 Ω @ 200mA, 10V 2.4V @ 1mA 110pF @ 25V 15ns 15 ns 20V -220V 120mA Tj 220V 20 pF 4.5V 10V ±20V
DN2535N5-G DN2535N5-G Microchip Technology 0.0000
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0.00000000 download 5 Weeks Through Hole Tube 2008 Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free Tin 3 LOW THRESHOLD TO-220-3 No SVHC 9.02mm 4.83mm Through Hole 6.000006g -55°C~150°C TJ MOSFET (Metal Oxide) e3 NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 15W 10 ns 15W Tc 500mA SWITCHING 15 ns SILICON N-Channel 25 Ω @ 120mA, 0V 300pF @ 25V 15ns 20 ns 20V 350V Depletion Mode 0.5A 500mA Tj 0.5A 0V ±20V
VP2106N3-G VP2106N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2006 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Tin No 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 BOTTOM 1 1 Single 740mW 4 ns 1W Tc 250mA SWITCHING 5 ns SILICON P-Channel 12 Ω @ 500mA, 10V 3.5V @ 1mA 60pF @ 25V 5ns 5 ns 20V -60V 0.25A 250mA Tj 60V 8 pF 5V 10V ±20V
TN2524N8-G TN2524N8-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant Lead Free Tin No 4 LOGIC LEVEL COMPATIBLE TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FLAT 260 40 R-PSSO-F3 1 FET General Purpose Power 1 DRAIN Single 1.6W 10 ns 1.6W Tc 360mA SWITCHING 6Ohm 20 ns SILICON N-Channel 6 Ω @ 500mA, 10V 2V @ 1mA 125pF @ 25V 10ns 10 ns 20V 240V 0.36A 360mA Tj 2A 4.5V 10V ±20V
VN2406L-G VN2406L-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2008 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed BOTTOM 1 FET General Purpose Power 1 Single 1W 8 ns 1W Tc 190mA SWITCHING 6Ohm 23 ns SILICON N-Channel 6 Ω @ 500mA, 10V 2V @ 1mA 125pF @ 25V 8ns 24 ns 20V 240V 190mA Tj 20 pF 2.5V 10V ±20V
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