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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Height Width Resistance Mfr Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type Current Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Frequency Range JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Voltage Number of Elements Configuration Diode Type JEDEC-95 Code Polarity Case Connection Element Configuration Power Dissipation Turn On Delay Time Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Current - Average Rectified (Io) Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Feedback Cap-Max (Crss) Transistor Type Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Collector Emitter Saturation Voltage Vce(on) (Max) @ Vge, Ic Continuous Collector Current Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Current - Max Voltage - Peak Reverse (Max) Resistance @ If, F Capacitance Ratio Capacitance Ratio Condition Q @ Vr, F DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Reverse Recovery Time (trr)
VN2410L-G VN2410L-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2005 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Tin 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) 5.334mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 2A e3 BOTTOM NOT APPLICABLE NOT APPLICABLE 1 Not Qualified 240V 1 Single 1W 8 ns 1W Tc 190mA SWITCHING 23 ns SILICON N-Channel 10 Ω @ 500mA, 10V 2V @ 1mA 125pF @ 25V 8ns 24 ns 20V 240V 190mA Tj 20 pF 2.5V 10V ±20V
VN0300L-G-P002 VN0300L-G-P002 Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM NOT SPECIFIED NOT SPECIFIED 1 1 Single 1W Tc 640mA SWITCHING SILICON N-Channel 1.2 Ω @ 1A, 10V 2.5V @ 1mA 190pF @ 20V 30V 30V 0.64A 640mA Tj 50 pF 5V 10V ±30V
KV2151-00 KV2151-00 Microchip Technology 0.0000
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0.00000000 download Active RoHS Compliant VCO 2 Single
TN0604N3-G TN0604N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 FET General Purpose Power 1 Single 740mW 10 ns 740mW Ta 700mA SWITCHING 0.75Ohm 25 ns SILICON N-Channel 750m Ω @ 1.5A, 10V 1.6V @ 1mA 190pF @ 20V 6ns 20 ns 20V 40V 0.7A 700mA Tj 50 pF 5V 10V ±20V
MIC94030BM4 TR MIC94030BM4 TR Microchip Technology 0.0000
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0.00000000 download Tape & Reel (TR) 2006 TinyFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-253-4, TO-253AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) MIC94030 SOT-143 568mW Ta P-Channel 450mOhm @ 100mA, 10V 1.4V @ 250μA 100pF @ 12V 1A Ta 16V 2.7V 10V 16V
0912GN-100LV 0912GN-100LV Microchip Technology 0.0000
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TN2435N8-G TN2435N8-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant 4 LOGIC LEVEL COMPATIBLE TO-243AA 1.6mm 2.6mm 10Ohm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) FLAT 260 40 R-PSSO-F3 1 Not Qualified 1 DRAIN Single 1.6W 5 ns 1.6W Ta 365mA SWITCHING 28 ns SILICON N-Channel 6 Ω @ 750mA, 10V 2.5V @ 1mA 200pF @ 25V 10ns 10 ns 20V 350V 0.365A 365mA Tj 3V 10V ±20V
ARF1510 ARF1510 Microchip Technology 0.0000
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TP2640LG-G TP2640LG-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 8 EAR99 4.9mm ROHS3 Compliant 8 LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) 1.65mm 3.9mm Surface Mount 84.99187mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 40 1 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE 1.3W 10 ns 740mW Ta -210mA SWITCHING 60 ns SILICON P-Channel 15 Ω @ 300mA, 10V 2V @ 1mA 300pF @ 25V 15ns 15 ns 20V -400V 86mA Tj 400V 2.5V 10V ±20V
UM7201D UM7201D Microchip Technology 0.0000
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0.00000000 download RoHS non-compliant Attenuator|Switch 2 Single
UM4906D UM4906D Microchip Technology 0.0000
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0.00000000 download RoHS non-compliant Switch|Attenuator 2 S|HF Single
TN0104N3-G-P014 TN0104N3-G-P014 Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Tape & Box (TB) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM O-PBCY-T3 1 1 Single 3 ns 1W Tc 450mA SWITCHING 6 ns SILICON N-Channel 1.8 Ω @ 1A, 10V 1.6V @ 500μA 70pF @ 20V 7ns 5 ns 20V 40V 0.45A 450mA Ta 3V 10V ±20V
VN0606L-G-P003 VN0606L-G-P003 Microchip Technology 1.3239
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0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM 1 1 SINGLE WITH BUILT-IN DIODE 1W 1W Tc 330mA SWITCHING 3Ohm SILICON N-Channel 3 Ω @ 1A, 10V 2V @ 1mA 50pF @ 25V 30V 60V 330mA Tj 5 pF 10V ±30V
KVX2301-23-0 KVX2301-23-0 Microchip Technology 0.0000
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0.00000000 - TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C Single SOT-23-3 120pF @ 4V, 1MHz 22 V - 80 @ 4V, 50MHz
TP2424N8-G TP2424N8-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2004 Active 1 (Unlimited) 3 EAR99 4.6mm ROHS3 Compliant No 4 LOGIC LEVEL COMPATIBLE, LOW THRESHOLD TO-243AA 1.6mm 2.6mm Surface Mount 52.786812mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) FLAT 260 40 R-PSSO-F3 1 1 DRAIN Single 1.6W 20 ns 1.6W Ta 316mA SWITCHING 8Ohm 35 ns SILICON P-Channel 8 Ω @ 500mA, 10V 2.4V @ 1mA 200pF @ 25V 30ns 30 ns 20V -240V 316mA Tj 240V 4.5V 10V ±20V
TN0606N3-G TN0606N3-G Microchip Technology 0.0000
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0.00000000 download 20 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed BOTTOM 1 FET General Purpose Power 1 Single 1W 6 ns 1W Tc 500mA SWITCHING 2Ohm 16 ns SILICON N-Channel 1.5 Ω @ 750mA, 10V 2V @ 1mA 150pF @ 25V 14ns 16 ns 20V 60V 0.5A 500mA Tj 3V 10V ±20V
GN2470K4-G GN2470K4-G Microchip Technology 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2008 Active 3 (168 Hours) 2 EAR99 6.73mm ROHS3 Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.39mm 6.1mm Surface Mount -55°C~150°C TJ Standard GULL WING 260 R-PSSO-G2 2.5W TO-252AA Single 2.5W 1A 700V 700V 5V @ 13V, 3A 1A 3.5A 8ns/20ns
DN2530N3-G DN2530N3-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free No 3 TO-226-3, TO-92-3 (TO-226AA) No SVHC 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) BOTTOM WIRE 1 FET General Purpose Power 1 Single 740mW 10 ns 740mW Ta 175mA SWITCHING 15 ns SILICON N-Channel 12 Ω @ 150mA, 0V 300pF @ 25V 15ns 15 ns 20V 300V Depletion Mode 175mA Tj 5 pF 0V ±20V
GCX1208-23-4 GCX1208-23-4 Microchip Technology 0.0000
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0.00000000 GCX1208 TO-236-3, SC-59, SOT-23-3 Microchip Technology Surface Mount -55°C ~ 125°C 1 Pair Common Cathode SOT-23-3 3.9pF @ 4V, 1MHz 30 V 3.9 C0/C30 2500 @ 4V, 50MHz
APT15DQ60SG APT15DQ60SG Microchip Technology 0.0000
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0.00000000 - TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Microchip Technology Surface Mount Standard D3PAK Fast Recovery =< 500ns, > 200mA (Io) 25 μA @ 600 V 2.4 V @ 15 A -55°C ~ 175°C 15A - 21 ns
LND150N3-G-P013 LND150N3-G-P013 Microchip Technology 0.0000
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0.00000000 download 8 Weeks Through Hole Tape & Box (TB) 2014 yes Active 1 (Unlimited) 3 5.21mm ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) BOTTOM O-PBCY-T3 1 1 Single 90 ns 740mW Ta 30mA SWITCHING 500V 100 ns SILICON N-Channel 1000 Ω @ 500μA, 0V 10pF @ 25V 450ns 1.3 μs 20V Depletion Mode 0.03A 30mA Tj 500V 0V ±20V
MS8150-P2613 MS8150-P2613 Microchip Technology 0.0000
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0.00000000 download Waffle Active RoHS Compliant Schottky Diode 2
VN0106N3-G-P003 VN0106N3-G-P003 Microchip Technology 0.7406
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0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM 1 1 Single 1W 3 ns 1W Tc 350mA SWITCHING 3Ohm 60V 6 ns SILICON N-Channel 3 Ω @ 1A, 10V 2.4V @ 1mA 65pF @ 25V 5ns 5 ns 20V 350mA Tj 60V 8 pF 5V 10V ±20V
SG2823J-DESC SG2823J-DESC Microchip Technology 0.0000
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0.00000000 download 10 Weeks Through Hole Tube no Active 1 (Unlimited) 18 EAR99 RoHS Compliant No 18 LOGIC LEVEL COMPATIBLE CDIP Through Hole 150°C TJ e0 TIN LEAD DUAL 18 8 NPN 18-CDIP 500mA 95V 95V AMPLIFIER SILICON 8 NPN Darlington 1.6V 1000 @ 350mA 2V 1.6V @ 500μA, 350mA
MPS2R11-608 MPS2R11-608 Microchip Technology 0.0000
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0.00000000 - 0402 (1005 Metric) Microchip Technology -65°C ~ 125°C PIN - Single 0402 - 200 mA 150V -
TP0620N3-G TP0620N3-G Microchip Technology 0.0000
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0.00000000 download 5 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant Lead Free 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm 12Ohm Through Hole 219.992299mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM WIRE NOT APPLICABLE NOT APPLICABLE 1 Not Qualified 1 Single 1W 10 ns 1W Ta -175mA SWITCHING 20 ns SILICON P-Channel 12 Ω @ 200mA, 10V 2.4V @ 1mA 150pF @ 25V 15ns 16 ns 20V -200V 175mA Tj 200V 5V 10V ±20V
MIC94050YM4-TR MIC94050YM4-TR Microchip Technology 0.0000
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0.00000000 download 7 Weeks Surface Mount Tape & Reel (TR) 2006 SymFET™ Active 1 (Unlimited) 150°C -40°C 2.92mm ROHS3 Compliant Lead Free -1.8A 4 TO-253-4, TO-253AA 1.02mm 1.3mm 160mOhm Surface Mount -40°C~150°C TJ -6V MOSFET (Metal Oxide) MIC94050 1 Single 568mW 320mOhm SOT-143 568mW Ta 1.8A P-Channel 160mOhm @ 100mA, 4.5V 1.2V @ 250μA 600pF @ 5.5V 6V 1.8A Ta 6V 600pF 1.8V 4.5V 6V 160 mΩ
VN2110K1-G VN2110K1-G Microchip Technology 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2001 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Tin No 3 HIGH INPUT IMPEDANCE TO-236-3, SC-59, SOT-23-3 Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 40 1 1 Single 360mW 3 ns 360mW Tc 200mA SWITCHING 4Ohm 6 ns SILICON N-Channel 4 Ω @ 500mA, 10V 2.4V @ 1mA 50pF @ 25V 5ns 5 ns 20V 100V 0.2A 200mA Tj 5 pF 5V 10V ±20V
VP3203N3-G VP3203N3-G Microchip Technology 0.0000
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0.00000000 download 14 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant No 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed BOTTOM 1 Other Transistors 1 Single 740mW 10 ns 740mW Ta 650mA SWITCHING 0.6Ohm 25 ns SILICON P-Channel 600m Ω @ 3A, 10V 3.5V @ 10mA 300pF @ 25V 15ns 15 ns 20V -30V 0.65A 650mA Tj 30V 60 pF 4.5V 10V ±20V
VN0104N3-G VN0104N3-G Microchip Technology 0.0000
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0.00000000 download 2 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant No 3 HIGH INPUT IMPEDANCE TO-226-3, TO-92-3 (TO-226AA) Through Hole 219.992299mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM 1 FET General Purpose Power 1 Single 1W 3 ns 1W Tc 350mA SWITCHING 3Ohm 6 ns SILICON N-Channel 3 Ω @ 1A, 10V 2.4V @ 1mA 65pF @ 25V 20V 40V 0.5A 350mA Tj 8 pF 5V 10V ±20V
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