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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Capacitance HTS Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Gain Max Power Dissipation Power - Max Reference Standard Number of Elements Configuration Diode Type Application Number of Phases JEDEC-95 Code Output Current Polarity Forward Current Forward Voltage Case Connection Current Rating (Amps) Max Surge Current Element Configuration Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Reverse Voltage Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Current - Test Transistor Type Voltage - Test Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
C3D20060D C3D20060D Cree/Wolfspeed 0.0000
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0.00000000 6 Weeks Radial, Through Hole Tube 2012 Z-Rec® Active 1 (Unlimited) 175°C -55°C 16.03mm RoHS Compliant No 3 TO-247-3 Unknown 21.082mm 5.156mm Through Hole 136.3W Silicon Carbide Schottky 28A 1.8V 250A Common Cathode 50μA TO-247-3 No Recovery Time > 500mA (Io) 50μA @ 600V 1.8V @ 10A -55°C~175°C 600V 10A 50μA 600V 157A 1 Pair Common Cathode 180A 600V 10A 0 s
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) 65V H-33288-6 2.17GHz 18dB 1.2A LDMOS 30V 32W
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0.00000000 4 Weeks Z-Rec® Active 1 (Unlimited) RoHS Compliant TO-220-2 Through Hole Silicon Carbide Schottky TO-220-2 No Recovery Time > 500mA (Io) 50μA @ 650V 1.5V @ 10A -55°C~175°C 650V 37A DC 0ns 611pF @ 0V 1MHz
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0.00000000 download 16 Weeks Tube 2016 C3M™ Active 1 (Unlimited) 4 RoHS Compliant TO-247-4 Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T4 IEC-60747-8-4 1 SINGLE WITH BUILT-IN DIODE DRAIN 83W Tc SWITCHING 0.155Ohm 1000V N-Channel 155m Ω @ 15A, 15V 3.5V @ 3mA 350pF @ 600V 21.5nC @ 15V 22A 22A Tc 1000V 50A 15V ±15V
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0.00000000 download Surface Mount Tube 2009 Zero Recovery™ Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free 6A TO-263-3, D2Pak (2 Leads + Tab), TO-263AB unknown Surface Mount 600V 340pF 8541.10.00.80 SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 175°C Rectifier Diodes Not Qualified 1 SINGLE Silicon Carbide Schottky EFFICIENCY 1 TO-252 6A Standard CATHODE No Recovery Time > 500mA (Io) 200μA @ 600V 1.8V @ 6A -55°C~175°C 600V 10A 0 s 340pF @ 0V 1MHz
CAB450M12XM3 CAB450M12XM3 Cree/Wolfspeed 690.3144
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0.00000000 8 Weeks Box Active 1 (Unlimited) Module Chassis Mount -40°C~175°C TJ 850W Module 2 N-Channel (Half Bridge) 3.7mOhm @ 450A, 15V 3.6V @ 132mA 38000pF @ 800V 1330nC @ 15V Silicon Carbide (SiC) 450A 1200V
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0.00000000 6 Weeks Tube 2014 Z-Rec® Active RoHS Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky TO-252-2 No Recovery Time > 500mA (Io) 50μA @ 650V 1.8V @ 2A -55°C~175°C 650V 8A DC 0ns 120pF @ 0V 1MHz
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
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0.00000000 8 Weeks Tray 2017 GaN Active 1 (Unlimited) RoHS Compliant 100V 12A 440210 7.9GHz~9.6GHz 50Ohm 10.2dB 12A 440210 1A HEMT 40V 131W
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0.00000000 Z-Rec® Active 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky No Recovery Time > 500mA (Io) 40μA @ 650V 1.7V @ 6A -55°C~175°C 650V 20A DC 0ns 295pF @ 0V 1MHz
C3D08065A C3D08065A Cree/Wolfspeed 0.0000
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0.00000000 6 Weeks Through Hole Tube 2015 Z-Rec® Active 1 (Unlimited) 175°C -55°C RoHS Compliant 2 TO-220-2 Unknown Through Hole 100W Silicon Carbide Schottky 8A 1.8V 220A Single 60μA TO-220-2 No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 8A -55°C~175°C 650V 8A 650V 220A 80A 650V 24A DC 0 s 441pF @ 0V 1MHz
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