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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Frequency Height Width Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Capacitance HTS Code Terminal Position Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Subcategory Gain Max Power Dissipation Reference Standard Number of Elements Configuration Diode Type Application Number of Phases Output Current Polarity Forward Current Forward Voltage Case Connection Current Rating (Amps) Max Surge Current Element Configuration Max Reverse Leakage Current Threshold Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Reverse Voltage Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Current - Test Transistor Type Voltage - Test Power - Output Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
CGHV40030F CGHV40030F Cree/Wolfspeed 0.0000
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0.00000000 8 Weeks Tray 2016 GaN Active 1 (Unlimited) RoHS Compliant 125V 4.2A 440166 0Hz~6GHz 16dB 150mA HEMT 50V 30W
PTFA220041M-V4-R1K PTFA220041M-V4-R1K Cree/Wolfspeed 0.0000
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0.00000000 Tape & Reel (TR) Not For New Designs 3 (168 Hours) RoHS Compliant
C3D08065A C3D08065A Cree/Wolfspeed 0.0000
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0.00000000 6 Weeks Through Hole Tube 2015 Z-Rec® Active 1 (Unlimited) 175°C -55°C RoHS Compliant 2 TO-220-2 Unknown Through Hole 100W Silicon Carbide Schottky 8A 1.8V 220A Single 60μA TO-220-2 No Recovery Time > 500mA (Io) 60μA @ 650V 1.8V @ 8A -55°C~175°C 650V 8A 650V 220A 80A 650V 24A DC 0 s 441pF @ 0V 1MHz
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
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0.00000000 GaN Not For New Designs 1 (Unlimited) RoHS Compliant 84V 440162 2.3GHz~2.7GHz 12.5dB 440162 500mA HEMT 28V 130W
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0.00000000 12 Weeks Tape & Reel (TR) Active 3 (168 Hours) RoHS Compliant
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0.00000000 GaN Active 1 (Unlimited) 28V 6GHz HEMT 35W
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0.00000000 8 Weeks Tray GaN Active 1 (Unlimited) RoHS Compliant 125V 440217 2.7GHz~3.1GHz 13.5dB 24A 440217 500mA HEMT 50V 500W
C3D16065D1 C3D16065D1 Cree/Wolfspeed 4.5926
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0.00000000 Z-Rec® Active ROHS3 Compliant TO-247-3 Through Hole Silicon Carbide Schottky TO-247-3 No Recovery Time > 500mA (Io) 95μA @ 650V 1.8V @ 16A -55°C~175°C 650V 0ns
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0.00000000 GaN Active 125V H-37248C-4 2.49GHz~2.69GHz 14dB H-37248C-4 200mA HEMT 48V 250W
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0.00000000 Tape & Reel (TR) Not For New Designs 1 (Unlimited) RoHS Compliant 65V H-33288-6 1.99GHz 19dB 1.9A LDMOS 30V 50W
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0.00000000 GaN Active 125V H-37248C-4 2.49GHz~2.69GHz 14dB H-37248C-4 200mA HEMT 48V 250W
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0.00000000 download Tape & Reel (TR) Not For New Designs 3 (168 Hours) RoHS Compliant
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0.00000000 download 16 Weeks Tube 2016 C3M™ Active 1 (Unlimited) 4 RoHS Compliant TO-247-4 Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T4 IEC-60747-8-4 1 SINGLE WITH BUILT-IN DIODE DRAIN 83W Tc SWITCHING 0.155Ohm 1000V N-Channel 155m Ω @ 15A, 15V 3.5V @ 3mA 350pF @ 600V 21.5nC @ 15V 22A 22A Tc 1000V 50A 15V ±15V
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0.00000000 download Tape & Reel (TR) Discontinued 3 (168 Hours) RoHS Compliant 65V 10-LDFN Exposed Pad 2.14GHz 16.2dB PG-SON-10 150mA LDMOS 28V 9.3W
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0.00000000 12 Weeks Cut Tape (CT) Active 3 (168 Hours) RoHS Compliant 65V 10-LDFN Exposed Pad 2.17GHz 20.5dB PG-SON-10 120mA LDMOS 28V 2.4W
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0.00000000 12 Weeks Tray 2015 GaN Not For New Designs 1 (Unlimited) RoHS Compliant 84V 7A 440166 0Hz~6GHz CGH40* 13dB 7A 440166 250mA HEMT 28V 30W
PTFB213004F-V2-R0 PTFB213004F-V2-R0 Cree/Wolfspeed 0.0000
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0.00000000 GaN Active 1 (Unlimited) 84V 440206 4GHz 14dB 440206 400mA HEMT 28V 45W
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0.00000000 12 Weeks Tape & Reel (TR) Active 3 (168 Hours) RoHS Compliant
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant 65V H-37275G-6/2 2.11GHz~2.17GHz 13.5dB 10μA H-37275G-6/2 720mA LDMOS 28V 290W
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0.00000000 8 Weeks Tray GaN Active 1 (Unlimited) RoHS Compliant 100V 6A 440210 7.9GHz~9.6GHz 10dB 500mA HEMT 40V 70W
C3M0065090D C3M0065090D Cree/Wolfspeed 13.2133
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0.00000000 16 Weeks Tube 2005 C3M™ Active 1 (Unlimited) RoHS Compliant 3 TO-247-3 No SVHC Through Hole -55°C~150°C TJ SiCFET (Silicon Carbide) 2.1V 125W Tc 36A N-Channel 78m Ω @ 20A, 15V 2.1V @ 5mA 660pF @ 600V 30.4nC @ 15V 36A Tc 900V 15V +18V, -8V
C4D05120E-TR C4D05120E-TR Cree/Wolfspeed 1.2891
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0.00000000 7 Weeks Surface Mount Tape & Reel (TR) 2017 Z-Rec® Active 3 (168 Hours) 175°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount Silicon Carbide Schottky 1.8V Single No Recovery Time > 500mA (Io) 150μA @ 1200V 1.8V @ 5A -55°C~175°C 42A 1200V 19A DC 0ns 390pF @ 0V 1MHz
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0.00000000 download Through Hole Tube 2008 Zero Recovery™ Obsolete 1 (Unlimited) 2 EAR99 175°C -55°C RoHS Compliant Lead Free 4A No 2 TO-220-2 Through Hole 600V 220pF 8541.10.00.80 3 Rectifier Diodes 1 Silicon Carbide Schottky EFFICIENCY 1 7A Standard 7A CATHODE Single No Recovery Time > 500mA (Io) 200μA @ 600V 1.8V @ 4A -55°C~175°C 600V 7A 200μA 600V 110A 0 s 220pF @ 0V 1MHz
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0.00000000 6 Weeks Through Hole Tube 2011 Z-Rec® Active 1 (Unlimited) 175°C -55°C 10.41mm RoHS Compliant No 2 TO-220-2 Unknown 19.431mm 4.699mm Through Hole 390pF 81W Silicon Carbide Schottky 5A 1.8V 46A Single 150μA TO-220-2 No Recovery Time > 500mA (Io) 150μA @ 1200V 1.8V @ 5A -55°C~175°C 1.2kV 8.2A 150μA 1.2kV 46A 400A 1200V 19A DC 0 s 1.2kV 390pF @ 0V 1MHz 175°C
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