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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Mfr Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type HTS Code Terminal Position Terminal Form Base Part Number Surface Mount JESD-30 Code Number of Channels Subcategory Max Power Dissipation Power - Max Reference Standard Number of Elements Configuration Diode Type Output Current-Max Polarity Forward Current Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Max Repetitive Reverse Voltage (Vrrm) Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Vce(on) (Max) @ Vge, Ic Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2)
1SS401(TE85L,F) 1SS401(TE85L,F) Toshiba Semiconductor and Storage 0.2215
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0.00000000 16 Weeks Surface Mount Cut Tape (CT) 2014 Active 1 (Unlimited) EAR99 100°C -40°C RoHS Compliant SC-70, SOT-323 unknown Surface Mount 8541.10.00.70 Rectifier Diodes 100mW 1 Schottky 0.3A 300mA Single Fast Recovery =< 500ns, > 200mA (Io) 50μA @ 20V 450mV @ 300mA 125°C Max 20V 300mA 25V 700mA 46pF @ 0V 1MHz
RN2412,LXHF RN2412,LXHF Toshiba Semiconductor and Storage 0.0000
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0.00000000 TO-236-3, SC-59, SOT-23-3 Toshiba Semiconductor and Storage Surface Mount 200 mW S-Mini PNP - Pre-Biased 100nA (ICBO) 50 V 100 mA 120 @ 1mA, 5V 300mV @ 250μA, 5mA 200 MHz 22 kOhms
CLH06(TE16R,Q) CLH06(TE16R,Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2017 Obsolete 1 (Unlimited) RoHS Compliant L-FLAT™ Surface Mount Standard Fast Recovery =< 500ns, > 200mA (Io) 300V 5A DC 35ns
SSM3J35CTC,L3F SSM3J35CTC,L3F Toshiba Semiconductor and Storage 0.2679
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2015 U-MOSVII Active 1 (Unlimited) RoHS Compliant SOT-1123 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) 500mW Ta 250mA P-Channel 1.4 Ω @ 150mA, 4.5V 1V @ 100μA 42pF @ 10V 250mA Ta 20V 1.2V 4.5V ±10V
TK60P03M1,RQ(S TK60P03M1,RQ(S Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI-H Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) DPAK 63W Tc 60A N-Channel 6.4mOhm @ 30A, 10V 2.3V @ 500μA 2700pF @ 10V 40nC @ 10V 4.3ns 11 ns 20V 60A Ta 30V 2.7nF 4.5V 10V ±20V 6.4 mΩ
2SA1837,WNLF(J 2SA1837,WNLF(J Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2007 Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole 150°C TJ 2W TO-220NIS PNP 1μA ICBO 230V 1A 100 @ 100mA 5V 1.5V @ 50mA, 500mA 70MHz
TK46A08N1,S4X TK46A08N1,S4X Toshiba Semiconductor and Storage 0.8632
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0.00000000 12 Weeks Through Hole Tube 2014 U-MOSVIII-H Active 1 (Unlimited) EAR99 RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 6.000006g 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power Single 30 ns 35W Tc 46A 51 ns N-Channel 8.4m Ω @ 23A, 10V 4V @ 500μA 2500pF @ 40V 37nC @ 10V 11ns 17 ns 20V 80V 80A 46A Tc 10V ±20V
RN1417,LF RN1417,LF Toshiba Semiconductor and Storage 0.1100
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) Non-RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 200mW NPN - Pre-Biased 500nA 50V 100mA 30 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 10 k Ω 4.7 k Ω
TPCA8010-H(TE12L,Q TPCA8010-H(TE12L,Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Tape & Reel (TR) 2009 π-MOSV Obsolete 1 (Unlimited) RoHS Compliant 8-PowerVDFN unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE YES FET General Purpose Power Single 1.6W Ta 45W Tc N-Channel 450m Ω @ 2.7A, 10V 4V @ 1mA 600pF @ 10V 10nC @ 10V 5.5A 5.5A Ta 200V 10V ±20V
RN2108(T5L,F,T) RN2108(T5L,F,T) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SC-75, SOT-416 Surface Mount 100mW 100mW 50V SSM 100mA 50V 300mV PNP - Pre-Biased 500nA 50V 100mA 80 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 22 kOhms 47 kOhms
RN2115,LF(CT RN2115,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 18 Weeks Cut Tape (CT) Discontinued 1 (Unlimited) RoHS Compliant SC-75, SOT-416 Surface Mount 100mW PNP -50V PNP - Pre-Biased 500nA 50V 100mA -100mA -6V 50 50 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 2.2 k Ω 10 k Ω
GT8G133(TE12L,Q) GT8G133(TE12L,Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2007 Obsolete 1 (Unlimited) RoHS Compliant 8-TSSOP (0.173, 4.40mm Width) Surface Mount 150°C TJ Standard 600mW 600mW 8-TSSOP 400V 2.9V 2.9V @ 4V, 150A 400V 150A 1.7μs/2μs
2SA1931,BOSCHQ(J 2SA1931,BOSCHQ(J Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2007 Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole 150°C TJ 2W TO-220NIS PNP 1μA ICBO 50V 5A 100 @ 1A 1V 400mV @ 200mA, 2A 60MHz
RN1313(TE85L,F) RN1313(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 11 Weeks Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) 125°C -55°C RoHS Compliant No 3 SC-70, SOT-323 Surface Mount RN131* 150mW NPN Single 100mW 50V 100mA 50V 50V NPN - Pre-Biased 100nA ICBO 100mA 120 120 @ 1mA 5V 300mV @ 250μA, 5mA 250MHz 47 k Ω
RN2103CT(TPL3) RN2103CT(TPL3) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) SC-101, SOT-883 Surface Mount YES BIP General Purpose Small Signals 50mW 1 PNP 0.05W SILICON PNP - Pre-Biased 500nA 20V 50mA 100 @ 10mA 5V 150mV @ 250μA, 5mA 22 k Ω 22 k Ω
RN2111,LF(CT RN2111,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Cut Tape (CT) Discontinued 1 (Unlimited) RoHS Compliant SC-75, SOT-416 Surface Mount 100mW PNP -50V PNP - Pre-Biased 100nA ICBO 50V 100mA -100mA -5V 120 120 @ 1mA 5V 300mV @ 250μA, 5mA 200MHz 10 k Ω
2SA2060(TE12L,F) 2SA2060(TE12L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2009 Active 1 (Unlimited) RoHS Compliant No 4 TO-243AA Surface Mount 150°C TJ 1W 1 1W 2A 50V 50V PNP 100nA ICBO 50V 7V 200 @ 300mA 2V 200mV @ 33mA, 1A
TJ60S04M3L(T6L1,NQ TJ60S04M3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) 2 RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-XSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 90W Tc 60A SWITCHING 0.0094Ohm 40V SILICON P-Channel 6.3m Ω @ 30A, 10V 3V @ 1mA 6510pF @ 10V 125nC @ 10V 96ns 240 ns 10V 60A Ta 40V 120A 146 mJ 6V 10V +10V, -20V
TK16A60W,S4X TK16A60W,S4X Toshiba Semiconductor and Storage 0.0000
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0.00000000 52 Weeks Tube 2013 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole MOSFET (Metal Oxide) TO-220 40W Tc N-Channel 190mOhm @ 7.9A, 10V 3.7V @ 790μA 1350pF @ 300V 40nC @ 10V 15.8A Ta 600V 10V ±30V
2SC5171(ONK,Q,M) 2SC5171(ONK,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2007 Obsolete 1 (Unlimited) TO-220-3 Full Pack Through Hole 150°C TJ 2W NPN 5μA ICBO 180V 2A 100 @ 100mA 5V 1V @ 100mA, 1A 200MHz
RN2107,LF(CT RN2107,LF(CT Toshiba Semiconductor and Storage 0.2274
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0.00000000 16 Weeks Cut Tape (CT) Discontinued 1 (Unlimited) RoHS Compliant SC-75, SOT-416 Surface Mount 100mW PNP -50V PNP - Pre-Biased 500nA 50V 100mA -100mA -6V 80 80 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 10 k Ω 47 k Ω
RN1110,LF(CT RN1110,LF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SC-75, SOT-416 Surface Mount 100mW 100mW SSM 100mA 50V 300mV NPN - Pre-Biased 100nA ICBO 50V 100mA 120 @ 1mA 5V 300mV @ 250μA, 5mA 250MHz 4.7 kOhms
SSM6L39TU,LF SSM6L39TU,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 Discontinued 1 (Unlimited) EAR99 RoHS Compliant 6-SMD, Flat Leads unknown Surface Mount 150°C TJ 500mW 500mW 800mA N and P-Channel 143m Ω @ 600MA, 4V 1V @ 1mA 268pF @ 10V Logic Level Gate, 1.8V Drive 20V
RN1114MFV,L3F RN1114MFV,L3F Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) 2016 Active RoHS Compliant SOT-723 Surface Mount 150mW NPN - Pre-Biased 500nA 50V 100mA 50 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 1 k Ω 10 k Ω
TPH1R306P1,L1Q TPH1R306P1,L1Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSIX-H Active 1 (Unlimited) 8-PowerVDFN Surface Mount 175°C MOSFET (Metal Oxide) 960mW Ta 170W Tc N-Channel 1.28m Ω @ 50A, 10V 2.5V @ 1mA 8100pF @ 30V 91nC @ 10V 100A Tc 60V 4.5V 10V ±20V
RN1114,LF RN1114,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 10 Weeks Tape & Reel (TR) Active 1 (Unlimited) SC-75, SOT-416 Surface Mount 100mW NPN - Pre-Biased 500nA 50V 100mA 50 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 1 k Ω 10 k Ω
TTC012(Q) TTC012(Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 18 Weeks Through Hole Bulk 2011 Active 1 (Unlimited) RoHS Compliant Lead Free No 3 TO-251-3 Short Leads, IPak, TO-251AA Through Hole 150°C TJ 1.1W 1 1.1W 2A 375V 375V NPN 10μA ICBO 800V 100 @ 300mA 5V 1V @ 62.5mA, 500mA
SSM6J51TUTE85LF SSM6J51TUTE85LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Cut Tape (CT) 2009 Discontinued 1 (Unlimited) RoHS Compliant 6-SMD, Flat Leads Surface Mount 150°C TJ MOSFET (Metal Oxide) 500mW Ta P-Channel 54m Ω @ 2A, 2.5V 1V @ 1mA 1700pF @ 10V 4A Ta 12V
TPC8208(TE12L,Q) TPC8208(TE12L,Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Digi-Reel® 2003 Discontinued 1 (Unlimited) RoHS Compliant Lead Free 5A 8 8-SOIC (0.173, 4.40mm Width) Surface Mount 150°C TJ 20V TPC*208 450mW 450mW 8-SOP (5.5x6.0) 5A 2 N-Channel (Dual) 50mOhm @ 2.5A, 4V 1.2V @ 200μA 780pF @ 10V 9.5nC @ 5V 5ns Logic Level Gate 5A 20V 780pF 50 mΩ
RN2910FE,LXHF(CT RN2910FE,LXHF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 SOT-563, SOT-666 Toshiba Semiconductor and Storage Surface Mount 100mW ES6 2 PNP - Pre-Biased (Dual) 100nA (ICBO) 50V 100mA 120 @ 1mA, 5V 300mV @ 250μA, 5mA 200MHz 4.7kOhms -
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