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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Height Width Mfr Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Capacitance HTS Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Max Power Dissipation Power - Max Reference Standard Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Output Current Polarity Forward Current Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Reverse Voltage Recovery Time Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2)
2SA2154CT-GR,L3F 2SA2154CT-GR,L3F Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2003 Active 1 (Unlimited) RoHS Compliant 3 SC-101, SOT-883 unknown Surface Mount 150°C TJ 100mW 100mW 50V 100mA 50V 300mV PNP 100nA ICBO 50V 5V 200 @ 2mA 6V 300mV @ 10mA, 100mA 80MHz
CLH06(TE16L,Q) CLH06(TE16L,Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2017 Obsolete 1 (Unlimited) RoHS Compliant Lead Free L-FLAT™ Surface Mount Standard Fast Recovery =< 500ns, > 200mA (Io) 5A 300V 5A DC 35ns
TJ30S06M3L(T6L1,NQ TJ30S06M3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) 2 RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 68W Tc 30A SWITCHING 0.028Ohm 60V SILICON P-Channel 21.8m Ω @ 15A, 10V 3V @ 1mA 3950pF @ 10V 80nC @ 10V 43ns 118 ns 10V 30A Ta 60V 60A 71 mJ 6V 10V +10V, -20V
TK12A60W,S4VX TK12A60W,S4VX Toshiba Semiconductor and Storage 0.2855
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0.00000000 16 Weeks Through Hole Tube 2013 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 890pF 35W 35W Tc 11.5A 85 ns N-Channel 300m Ω @ 5.8A, 10V 3.7V @ 600μA 890pF @ 300V 25nC @ 10V 23ns 5.5 ns 30V 600V Super Junction 11.5A Ta 10V ±30V
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0.00000000 10 Weeks Tape & Reel (TR) Active 1 (Unlimited) TO-236-3, SC-59, SOT-23-3 Surface Mount 200mW NPN - Pre-Biased 100nA ICBO 50V 100mA 120 @ 1mA 5V 300mV @ 250μA, 5mA 250MHz 22 k Ω
RN2413,LXHF RN2413,LXHF Toshiba Semiconductor and Storage 0.0000
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0.00000000 Automotive, AEC-Q101 TO-236-3, SC-59, SOT-23-3 Toshiba Semiconductor and Storage Surface Mount 200 mW S-Mini PNP - Pre-Biased 100nA (ICBO) 50 V 100 mA 120 @ 1mA, 5V 300mV @ 250μA, 5mA 200 MHz 47 kOhms
2SC2859-O(TE85L,F) 2SC2859-O(TE85L,F) Toshiba Semiconductor and Storage 5.8894
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0.00000000 Surface Mount Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 125°C TJ 150mW 150mW 30V S-Mini 500mA 30V 250mV NPN 100nA ICBO 30V 500mA 70 @ 100mA 1V 250mV @ 10mA, 100mA 300MHz
TK3A65D(STA4,Q,M) TK3A65D(STA4,Q,M) Toshiba Semiconductor and Storage 1.1331
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0.00000000 download 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 35W Tc 3A N-Channel 2.25Ohm @ 1.5A, 10V 4.4V @ 1mA 540pF @ 25V 11nC @ 10V 18ns 8 ns 30V 3A Ta 650V 540pF 10V ±30V 2.25 Ω
2SK3670(T6CANO,F,M 2SK3670(T6CANO,F,M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2010 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole TO-92MOD
SSM3J331R,LF SSM3J331R,LF Toshiba Semiconductor and Storage 0.3441
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0.00000000 16 Weeks Tape & Reel (TR) 2004 U-MOSVI Active 1 (Unlimited) EAR99 RoHS Compliant SOT-23-3 Flat Leads Surface Mount 150°C TJ MOSFET (Metal Oxide) Single 1W 1W Ta 4A P-Channel 55m Ω @ 3A, 4.5V 1V @ 1mA 630pF @ 10V 10.4nC @ 4.5V 8V -20V 4A Ta 20V 1.5V 4.5V ±8V
2SC2235-Y(MBSH1,FM 2SC2235-Y(MBSH1,FM Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 100nA ICBO 120V 800mA 80 @ 100mA 5V 1V @ 50mA, 500mA 120MHz
SSM3J375F,LF SSM3J375F,LF Toshiba Semiconductor and Storage 0.3180
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C MOSFET (Metal Oxide) 600mW Ta P-Channel 150m Ω @ 1A, 4.5V 1V @ 1mA 270pF @ 10V 4.6nC @ 4.5V 2A Ta 20V 1.5V 4.5V +6V, -8V
CLH01(TE16L,Q) CLH01(TE16L,Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Bulk 2013 Obsolete 1 (Unlimited) 150°C -40°C RoHS Compliant No 2 L-FLAT™ Surface Mount Standard 3A Single Fast Recovery =< 500ns, > 200mA (Io) 10μA @ 200V 0.98V @ 3A -40°C~150°C 10μA 200V 60A 3A DC 35 ns
RN2906FE(TE85L,F) RN2906FE(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 unknown Surface Mount BIP General Purpose Small Signal 100mW 100mW 2 PNP 50V 100mA 50V 300mV SILICON 2 PNP - Pre-Biased (Dual) 100nA ICBO 80 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 4.7k Ω 47k Ω
SSM3K37FS,LF SSM3K37FS,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 U-MOSIII Active 1 (Unlimited) RoHS Compliant SC-75, SOT-416 unknown Surface Mount 150°C TA MOSFET (Metal Oxide) 100mW Ta 200mA N-Channel 2.2 Ω @ 100mA, 4.5V 1V @ 1mA 12pF @ 10V 200mA Ta 20V 1.5V 4.5V ±10V
SSM3J372R,LF SSM3J372R,LF Toshiba Semiconductor and Storage 0.3777
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) RoHS Compliant SOT-23-3 Flat Leads Surface Mount 150°C MOSFET (Metal Oxide) 1W Ta P-Channel 42m Ω @ 5A, 10V 1.2V @ 1mA 560pF @ 15V 8.2nC @ 4.5V 6A Ta 30V 1.8V 10V +12V, -6V
1SS422(TE85L,F) 1SS422(TE85L,F) Toshiba Semiconductor and Storage 0.3510
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) EAR99 100°C -40°C 1.6mm Non-RoHS Compliant 3 SC-75, SOT-416 700μm 800μm Surface Mount 8541.10.00.70 Rectifier Diodes Schottky 100mA Small Signal =< 200mA (Io), Any Speed 50μA @ 30V 500mV @ 100mA 125°C Max 100mA 50μA 35V 1A 30V 15pF @ 0V 1MHz
CRS01(TE85L) CRS01(TE85L) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Surface Mount Cut Tape (CT) 2005 no Discontinued 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 1A 2 SOD-123F unknown Surface Mount 30V 40pF 8541.10.00.80 DUAL FLAT NOT SPECIFIED NOT SPECIFIED CRS01 2 Rectifier Diodes Not Qualified SILICON 1 SINGLE Schottky 1A Standard Fast Recovery =< 500ns, > 200mA (Io) 1.5mA @ 30V 360mV @ 1A -40°C~125°C 30V 1A
RN2105CT(TPL3) RN2105CT(TPL3) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) SC-101, SOT-883 Surface Mount YES BIP General Purpose Small Signals 50mW 1 PNP 0.05W SILICON PNP - Pre-Biased 500nA 20V 50mA 120 @ 10mA 5V 150mV @ 250μA, 5mA 2.2 k Ω 47 k Ω
RN4911(T5L,F,T) RN4911(T5L,F,T) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) 6-TSSOP, SC-88, SOT-363 Surface Mount 200mW 1 NPN, 1 PNP - Pre-Biased (Dual) 100nA ICBO 50V 100mA 120 @ 1mA 5V 300mV @ 250μA, 5mA 200MHz 10k Ω
TK50E06K3(S1SS-Q) TK50E06K3(S1SS-Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Through Hole Tube 2016 U-MOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole
RN1968FE(TE85L,F) RN1968FE(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) RoHS Compliant SOT-563, SOT-666 Surface Mount YES BIP General Purpose Small Signal 100mW 2 NPN 0.1W SILICON 2 NPN - Pre-Biased (Dual) 100nA ICBO 50V 100mA 80 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 22k Ω 47k Ω
TK040Z65Z,S1F TK040Z65Z,S1F Toshiba Semiconductor and Storage 10.2730
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0.00000000 16 Weeks Tube DTMOSVI Active 1 (Unlimited) RoHS Compliant TO-247-4 Through Hole 150°C MOSFET (Metal Oxide) 360W Tc N-Channel 40m Ω @ 28.5A, 10V 4V @ 2.85mA 6250pF @ 300V 105nC @ 10V 57A Ta 650V 10V ±30V
1SS301SU,LF 1SS301SU,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2015 Active 1 (Unlimited) 3 EAR99 RoHS Compliant SC-70, SOT-323 Surface Mount 8541.10.00.70 DUAL GULL WING 1SS301 R-PDSO-G3 125°C AEC-Q101 SILICON 2 Standard 0.1A 2A Common Cathode Small Signal =< 200mA (Io), Any Speed 500nA @ 80V 1.2V @ 100mA 125°C Max 80V 100mA 100nA 1 Pair Common Cathode 4 ns 0.1W 80V 4 ns
TTC4116FU,LF TTC4116FU,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) Non-RoHS Compliant SC-70, SOT-323 Surface Mount 150°C TJ 100mW NPN 100nA ICBO 50V 150mA 120 @ 2mA 6V 250mV @ 10mA, 100mA 80MHz
RN2415(TE85L,F) RN2415(TE85L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 10 Weeks Surface Mount Tape & Reel (TR) Active 1 (Unlimited) 150°C -55°C 2.9mm RoHS Compliant 3 TO-236-3, SC-59, SOT-23-3 1.1mm 1.5mm Surface Mount 200mW Single 100mA 50V PNP - Pre-Biased 500nA 300mV -6V 50 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 2.2 k Ω 10 k Ω
HN4K03JUTE85LF HN4K03JUTE85LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 Surface Mount Cut Tape (CT) 2009 Obsolete 1 (Unlimited) RoHS Compliant 5-TSSOP, SC-70-5, SOT-353 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 2 FET General Purpose Powers Dual 160 ns 200mW Ta 100mA 150 ns N-Channel 12 Ω @ 10mA, 2.5V 8.5pF @ 3V 1.5V 20V 0.1A 100mA Ta 2.5V 10V
RN2404,LF RN2404,LF Toshiba Semiconductor and Storage 0.0497
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0.00000000 14 Weeks Tape & Reel (TR) 2014 Not For New Designs 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 200mW PNP - Pre-Biased 500nA 50V 100mA 80 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 47 k Ω 47 k Ω
TK8A10K3,S5Q TK8A10K3,S5Q Toshiba Semiconductor and Storage 3.4426
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0.00000000 download 52 Weeks Through Hole Tube 2010 U-MOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 18W Tc 8A N-Channel 120mOhm @ 4A, 10V 4V @ 1mA 530pF @ 10V 12.9nC @ 10V 8A Ta 100V 530pF 10V ±20V 120 mΩ
SSM6J402TU,LF SSM6J402TU,LF Toshiba Semiconductor and Storage 0.4093
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) Non-RoHS Compliant 6-SMD, Flat Leads Surface Mount 150°C MOSFET (Metal Oxide) 500mW Ta P-Channel 117m Ω @ 1A, 10V 2.6V @ 1mA 280pF @ 15V 5.3nC @ 10V 2A Ta 30V 4V 10V ±20V
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