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2SA2154CT-GR,L3F
2SA2154CT-GR,L3F
4669-2SA2154CT-GR,L3F
SC-101, SOT-883
2SA2154CT-GR,L3F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at HK JDW
In Stock : 999
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Product Details
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2SA2154CT-GR,L3F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 6V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.As a result, it can handle voltages as low as 50V volts.In extreme cases, the collector current can be as low as 100mA volts.
2SA2154CT-GR,L3F Features
the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
2SA2154CT-GR,L3F Applications
There are a lot of Toshiba Semiconductor and Storage 2SA2154CT-GR,L3F applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
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2SA2154CT-GR,L3F
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