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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Mfr Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type Capacitance HTS Code Terminal Position Terminal Form Base Part Number Surface Mount JESD-30 Code Number of Channels Subcategory Max Power Dissipation Power - Max Reference Standard Number of Elements Configuration Diode Type Output Current-Max Polarity Forward Current Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Max Breakdown Voltage Supplier Device Package Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Max Repetitive Reverse Voltage (Vrrm) Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Vce(on) (Max) @ Vge, Ic Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Continuous Collector Current Test Condition Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min Voltage - Peak Reverse (Max) Capacitance Ratio Capacitance Ratio Condition DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition Resistor - Base (R1) Resistor - Emitter Base (R2)
TPCA8009-H(TE12L,Q TPCA8009-H(TE12L,Q Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 Obsolete 1 (Unlimited) RoHS Compliant Lead Free 7A 8 8-PowerVDFN unknown Surface Mount 150°C TJ 150V MOSFET (Metal Oxide) 1.6W Ta 45W Tc 7A N-Channel 350m Ω @ 3.5A, 10V 4V @ 1mA 600pF @ 10V 10nC @ 10V 7ns 7A Ta 10V ±20V
GT10J312(Q) GT10J312(Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Surface Mount Tube 2007 Obsolete 1 (Unlimited) RoHS Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ Standard GT10 60W 60W TO-220SM 200 ns 10A 600V 2.7V 2.7V @ 15V, 10A 600V 10A 300V, 10A, 100Ohm, 15V 20A 400ns/400ns
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0.00000000 12 Weeks Bulk Active 1 (Unlimited) RoHS Compliant TO-225AA, TO-126-3 Through Hole 150°C TJ 10W TO-126N PNP 100nA ICBO 160V 1.5A 140 @ 100mA 5V 500mV @ 50mA, 500mA 100MHz
TK6A65W,S5X TK6A65W,S5X Toshiba Semiconductor and Storage 6.7410
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0.00000000 16 Weeks Through Hole Tube 2015 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 30W Tc 5.8A N-Channel 1Ohm @ 2.9A, 10V 3.5V @ 180μA 390pF @ 300V 11nC @ 10V 5.8A Ta 650V 390pF 10V ±30V 1 Ω
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2015 yes Active 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount Schottky Small Signal =< 200mA (Io), Any Speed 5μA @ 40V 360mV @ 10mA 125°C Max 40V 70mA 1 Pair Series Connection 40V
SSM6P35AFU,LF SSM6P35AFU,LF Toshiba Semiconductor and Storage 0.2458
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVII Active 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount 150°C 285mW Ta 2 P-Channel (Dual) 1.4 Ω @ 150mA, 4.5V 1V @ 100μA 42pF @ 10V Logic Level Gate, 1.2V Drive 250mA Ta 20V
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0.00000000 Automotive, AEC-Q101 6-TSSOP, SC-88, SOT-363 Toshiba Semiconductor and Storage Surface Mount 200mW US6 1 NPN, 1 PNP - Pre-Biased (Dual) 500nA 50V 100mA 80 @ 10mA, 5V 300mV @ 250μA, 5mA 250MHz, 200MHz 10kOhms 47kOhms
2SJ377(TE16R1,NQ) 2SJ377(TE16R1,NQ) Toshiba Semiconductor and Storage 9.3291
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0.00000000 download Surface Mount, Through Hole Cut Tape (CT) 2005 Discontinued 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free -5A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ -60V MOSFET (Metal Oxide) 1 20W PW-MOLD 20W Tc 5A P-Channel 190mOhm @ 2.5A, 10V 2V @ 1mA 630pF @ 10V 22nC @ 10V 25ns 5A Ta 60V 630pF 4V 10V ±20V 190 mΩ
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant SC-101, SOT-883 Surface Mount BIP General Purpose Small Signal 200mW 200mW 2 PNP 50V 100mA 50V 300mV SILICON 2 PNP - Pre-Biased (Dual) 100nA ICBO 80 @ 10mA 5V 300mV @ 250μA, 5mA 200MHz 10k Ω 47k Ω
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0.00000000 Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) SC-101, SOT-883 Surface Mount YES BIP General Purpose Small Signals 50mW 1 PNP 0.05W SILICON PNP - Pre-Biased 500nA 20V 50mA 100 @ 10mA 5V 150mV @ 250μA, 5mA 22 k Ω 22 k Ω
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0.00000000 TO-236-3, SC-59, SOT-23-3 Toshiba Semiconductor and Storage Surface Mount 200 mW S-Mini NPN - Pre-Biased 100nA (ICBO) 50 V 100 mA 120 @ 1mA, 5V 300mV @ 250μA, 5mA 250 MHz 4.7 kOhms
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0.00000000 download Bulk 2013 Obsolete 1 (Unlimited) L-FLAT™ Surface Mount Schottky Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 60V 0.58V @ 10A -40°C~125°C 60V 10A DC 345pF @ 10V 1MHz
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) RoHS Compliant 6-TSSOP, SC-88, SOT-363 Surface Mount 6.010099mg 2 200mW 200mW NPN, PNP 50V US6 100mA 50V 300mV 1 NPN, 1 PNP - Pre-Biased (Dual) 500nA 50V 100mA -100mA -6V 80 80 @ 10mA 5V 300mV @ 250μA, 5mA 250MHz 200MHz 10kOhms 47kOhms
TK32E12N1,S1X TK32E12N1,S1X Toshiba Semiconductor and Storage 0.5788
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0.00000000 12 Weeks Through Hole Tube 2014 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) Single 98W 98W Tc 60A 43 ns N-Channel 13.8m Ω @ 16A, 10V 4V @ 500μA 2000pF @ 60V 34nC @ 10V 14ns 14 ns 20V 120V 60A Tc 10V ±20V
RN1113CT(TPL3) RN1113CT(TPL3) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) RoHS Compliant SC-101, SOT-883 Surface Mount YES BIP General Purpose Small Signal 50mW 1 NPN 0.05W SILICON NPN - Pre-Biased 100nA ICBO 20V 50mA 300 @ 1mA 5V 150mV @ 250μA, 5mA 47 k Ω
RN4984FE,LXHF(CT RN4984FE,LXHF(CT Toshiba Semiconductor and Storage 0.0000
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0.00000000 SOT-563, SOT-666 Toshiba Semiconductor and Storage Surface Mount 100mW ES6 1 NPN, 1 PNP - Pre-Biased (Dual) 500nA 50V 100mA 80 @ 10mA, 5V 300mV @ 250μA, 5mA 250MHz, 200MHz 47kOhms 47kOhms
1SS406,H3F 1SS406,H3F Toshiba Semiconductor and Storage 0.1651
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant SC-76, SOD-323 Surface Mount Schottky Small Signal =< 200mA (Io), Any Speed 500nA @ 20V 550mV @ 50mA 125°C Max 20V 50mA 3.9pF @ 0V 1MHz
1SV314(TPL3,F) 1SV314(TPL3,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) 2014 Active 1 (Unlimited) EAR99 RoHS Compliant SC-79, SOD-523 Surface Mount 125°C TJ YES Varactors Single 3.4pF @ 2.5V 1MHz 10V 2.5 C0.5/C2.5
1SS401(TE85L,F) 1SS401(TE85L,F) Toshiba Semiconductor and Storage 0.2215
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0.00000000 16 Weeks Surface Mount Cut Tape (CT) 2014 Active 1 (Unlimited) EAR99 100°C -40°C RoHS Compliant SC-70, SOT-323 unknown Surface Mount 8541.10.00.70 Rectifier Diodes 100mW 1 Schottky 0.3A 300mA Single Fast Recovery =< 500ns, > 200mA (Io) 50μA @ 20V 450mV @ 300mA 125°C Max 20V 300mA 25V 700mA 46pF @ 0V 1MHz
2SA2154CT-GR,L3F 2SA2154CT-GR,L3F Toshiba Semiconductor and Storage 0.0000
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2003 Active 1 (Unlimited) RoHS Compliant 3 SC-101, SOT-883 unknown Surface Mount 150°C TJ 100mW 100mW 50V 100mA 50V 300mV PNP 100nA ICBO 50V 5V 200 @ 2mA 6V 300mV @ 10mA, 100mA 80MHz
TJ30S06M3L(T6L1,NQ TJ30S06M3L(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSVI Active 1 (Unlimited) 2 RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 68W Tc 30A SWITCHING 0.028Ohm 60V SILICON P-Channel 21.8m Ω @ 15A, 10V 3V @ 1mA 3950pF @ 10V 80nC @ 10V 43ns 118 ns 10V 30A Ta 60V 60A 71 mJ 6V 10V +10V, -20V
TK12A60W,S4VX TK12A60W,S4VX Toshiba Semiconductor and Storage 0.2855
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0.00000000 16 Weeks Through Hole Tube 2013 DTMOSIV Active 1 (Unlimited) RoHS Compliant TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 890pF 35W 35W Tc 11.5A 85 ns N-Channel 300m Ω @ 5.8A, 10V 3.7V @ 600μA 890pF @ 300V 25nC @ 10V 23ns 5.5 ns 30V 600V Super Junction 11.5A Ta 10V ±30V
RN1412,LF RN1412,LF Toshiba Semiconductor and Storage 0.0000
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0.00000000 10 Weeks Tape & Reel (TR) Active 1 (Unlimited) TO-236-3, SC-59, SOT-23-3 Surface Mount 200mW NPN - Pre-Biased 100nA ICBO 50V 100mA 120 @ 1mA 5V 300mV @ 250μA, 5mA 250MHz 22 k Ω
RN2413,LXHF RN2413,LXHF Toshiba Semiconductor and Storage 0.0000
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0.00000000 Automotive, AEC-Q101 TO-236-3, SC-59, SOT-23-3 Toshiba Semiconductor and Storage Surface Mount 200 mW S-Mini PNP - Pre-Biased 100nA (ICBO) 50 V 100 mA 120 @ 1mA, 5V 300mV @ 250μA, 5mA 200 MHz 47 kOhms
2SC2859-O(TE85L,F) 2SC2859-O(TE85L,F) Toshiba Semiconductor and Storage 5.8894
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0.00000000 Surface Mount Tape & Reel (TR) 2014 Obsolete 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 125°C TJ 150mW 150mW 30V S-Mini 500mA 30V 250mV NPN 100nA ICBO 30V 500mA 70 @ 100mA 1V 250mV @ 10mA, 100mA 300MHz
TK3A65D(STA4,Q,M) TK3A65D(STA4,Q,M) Toshiba Semiconductor and Storage 1.1331
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0.00000000 download 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 35W Tc 3A N-Channel 2.25Ohm @ 1.5A, 10V 4.4V @ 1mA 540pF @ 25V 11nC @ 10V 18ns 8 ns 30V 3A Ta 650V 540pF 10V ±30V 2.25 Ω
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0.00000000 download Bulk 2010 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole TO-92MOD
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0.00000000 16 Weeks Tape & Reel (TR) 2004 U-MOSVI Active 1 (Unlimited) EAR99 RoHS Compliant SOT-23-3 Flat Leads Surface Mount 150°C TJ MOSFET (Metal Oxide) Single 1W 1W Ta 4A P-Channel 55m Ω @ 3A, 4.5V 1V @ 1mA 630pF @ 10V 10.4nC @ 4.5V 8V -20V 4A Ta 20V 1.5V 4.5V ±8V
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ 900mW TO-92MOD NPN 100nA ICBO 120V 800mA 80 @ 100mA 5V 1V @ 50mA, 500mA 120MHz
SSM3J375F,LF SSM3J375F,LF Toshiba Semiconductor and Storage 0.3180
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0.00000000 12 Weeks Tape & Reel (TR) U-MOSVI Active 1 (Unlimited) RoHS Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C MOSFET (Metal Oxide) 600mW Ta P-Channel 150m Ω @ 1A, 4.5V 1V @ 1mA 270pF @ 10V 4.6nC @ 4.5V 2A Ta 20V 1.5V 4.5V +6V, -8V
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