Call us: +86 0755-82563503

Currency: $ US Dollar

Items : %s%s

Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type HTS Code Max Current Rating Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Max Power Dissipation Power - Max Reference Standard Diode Element Material Number of Elements Configuration Diode Type JEDEC-95 Code Output Current Forward Current Forward Voltage Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Reverse Voltage Frequency Band Max Collector Current Diode Capacitance-Max Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Collector Emitter Saturation Voltage Vce(on) (Max) @ Vge, Ic Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Gate-Emitter Thr Voltage-Max Test Condition Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Resistance @ If, F Minority Carrier Lifetime-Nom
SPI11N65C3HKSA1 SPI11N65C3HKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant AVALANCHE RATED TO-262-3 Long Leads, I2Pak, TO-262AA compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 125W Tc SWITCHING 0.38Ohm 650V SILICON N-Channel 380m Ω @ 7A, 10V 3.9V @ 500μA 1200pF @ 25V 60nC @ 10V 11A 11A Tc 650V 33A 340 mJ 10V ±20V
IPB50R299CPATMA1 IPB50R299CPATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 8 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ no Obsolete 1 (Unlimited) 2 RoHS Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 104W 35 ns 500V 104W Tc 12A SWITCHING 0.299Ohm 80 ns SILICON N-Channel 299m Ω @ 6.6A, 10V 3.5V @ 440μA 1190pF @ 100V 31nC @ 10V 14ns 12 ns 20V 12A Tc 550V 26A 289 mJ 10V ±20V
AUIRFN8403TR AUIRFN8403TR Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 11 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET® Not For New Designs 1 (Unlimited) 5 EAR99 5.85mm ROHS3 Compliant 8 ULTRA LOW RESISTANCE 8-PowerTDFN 1.17mm 5mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED IRFN8403 R-PDSO-F5 1 FET General Purpose Power 1 DRAIN Single 11 ns 4.3W Ta 94W Tc 95A SWITCHING 0.0033Ohm 40V 33 ns SILICON N-Channel 3.3m Ω @ 50A, 10V 3.9V @ 100μA 3174pF @ 25V 98nC @ 10V 37ns 26 ns 20V 95A Tc 40V 492A 10V ±20V
IRFC4768ED IRFC4768ED Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Obsolete 1 (Unlimited)
AUIRLR3705Z AUIRLR3705Z Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 13 Weeks Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm 8Ohm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 130W 17 ns 130W Tc 42A SWITCHING 33 ns SILICON N-Channel 8m Ω @ 42A, 10V 3V @ 250μA 2900pF @ 25V 66nC @ 5V 150ns 70 ns 16V 55V 89A 42A Tc 4.5V 10V ±16V
BSZ12DN20NS3GATMA1 BSZ12DN20NS3GATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 13 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 6 ns 200V 50W Tc 11.3A SWITCHING 0.125Ohm 10 ns SILICON N-Channel 125m Ω @ 5.7A, 10V 4V @ 25μA 680pF @ 100V 8.7nC @ 10V 4ns 3 ns 20V 11.3A Tc 45A 60 mJ 10V ±20V
IRF3706SPBF IRF3706SPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) SMD/SMT 175°C -55°C RoHS Compliant Lead Free 77A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 8.5MOhm Surface Mount -55°C~175°C TJ 20V MOSFET (Metal Oxide) 1 Single 88W 6.8 ns 10.5mOhm D2PAK 88W Tc 77A 17 ns N-Channel 8.5mOhm @ 15A, 10V 2V @ 250μA 2410pF @ 10V 35nC @ 4.5V 87ns 4.8 ns 12V 20V 20V 2 V 77A Tc 20V 2.41nF 2.8V 10V ±12V 8.5 mΩ
IRF6637TR1 IRF6637TR1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tape & Reel (TR) 2006 HEXFET® Obsolete 3 (168 Hours) SMD/SMT 150°C -40°C Non-RoHS Compliant Lead Free 14A 7 DirectFET™ Isometric MP No SVHC Surface Mount -40°C~150°C TJ 30V MOSFET (Metal Oxide) 2.3W 1.8V DIRECTFET™ MP 13 ns 2.3W Ta 42W Tc 14A 14 ns N-Channel 7.7mOhm @ 14A, 10V 2.35V @ 250μA 1330pF @ 15V 17nC @ 4.5V 15ns 3.8 ns 20V 30V 30V 1.8 V 14A Ta 59A Tc 30V 1.33nF 4.5V 10V ±20V 7.7 mΩ
IPS031N03L G IPS031N03L G Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tube 2008 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-251-3 Stub Leads, IPak compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 MATTE TIN SINGLE 260 NOT SPECIFIED 3 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 94W Tc SWITCHING 0.004Ohm 30V SILICON N-Channel 3.1m Ω @ 30A, 10V 2.2V @ 250μA 5300pF @ 15V 51nC @ 10V 90A 90A Tc 30V 400A 60 mJ 4.5V 10V ±20V
IRG4CC50UB IRG4CC50UB Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Bulk 2017 Obsolete 1 (Unlimited) EAR99 Non-RoHS Compliant ULTRA FAST SPEED Die Through Hole Standard e0 Tin/Lead (Sn/Pb) UPPER NO LEAD NOT SPECIFIED NOT SPECIFIED YES O-XUUC-N Insulated Gate BIP Transistors Not Qualified 1 SINGLE N-CHANNEL SILICON 2V @ 15V, 10A 600V 55A 6V
IRFH7885TRPBF IRFH7885TRPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tape & Reel (TR) 2013 FASTIRFET™ Obsolete 1 (Unlimited) 5 EAR99 RoHS Compliant 8 8-VQFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED R-PDSO-N5 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W Ta 156W Tc 22A SWITCHING 0.0039Ohm SILICON N-Channel 3.9m Ω @ 50A, 10V 3.6V @ 150μA 2311pF @ 40V 54nC @ 10V 22A Ta 80V 250A 202 mJ 10V ±20V
IRGB4630DPBF IRGB4630DPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 16 Weeks Through Hole Tube 2013 Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant 3 TO-220-3 No SVHC 16.51mm 4.83mm Through Hole -40°C~175°C TJ Standard NOT SPECIFIED NOT SPECIFIED 206W 206W Single 100 ns 47A 600V 1.95V 2.15V 1.95V @ 15V, 18A 400V, 18A, 22 Ω, 15V 35nC 54A 40ns/105ns 95μJ (on), 350μJ (off)
IRF7524D1PBF IRF7524D1PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tube 2005 FETKY™ Obsolete 1 (Unlimited) RoHS Compliant 8 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 1.25W 1.25W Ta -1.7A 38 ns P-Channel 270m Ω @ 1.2A, 4.5V 700mV @ 250μA 240pF @ 15V 8.2nC @ 4.5V 35ns 43 ns 12V -20V Schottky Diode (Isolated) 1.7A Ta 20V 2.7V 4.5V ±12V
IPD50N10S3L16ATMA1 IPD50N10S3L16ATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 10 ns 100V 100W Tc 50A 0.0199Ohm 29 ns SILICON N-Channel 15m Ω @ 50A, 10V 2.4V @ 60μA 4180pF @ 25V 64nC @ 10V 5ns 20V 50A Tc 200A 4.5V 10V ±20V
IPI65R110CFDXKSA1 IPI65R110CFDXKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 16 Weeks Tube 2011 CoolMOS™ Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) Halogen Free Single 110mOhm PG-TO262-3 277.8W Tc 31.2A 68 ns N-Channel 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 3240pF @ 100V 118nC @ 10V 11ns 6 ns 20V 31.2A Tc 650V 3.24nF 10V ±20V 110 mΩ
IRL8113STRLPBF IRL8113STRLPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 10.668mm RoHS Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.699mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 110W 14 ns 110W Tc 105A SWITCHING 0.006Ohm 18 ns SILICON N-Channel 6m Ω @ 21A, 10V 2.25V @ 250μA 2840pF @ 15V 35nC @ 4.5V 38ns 5 ns 20V 30V 42A 105A Tc 420A 220 mJ 4.5V 10V ±20V
IRF5805 IRF5805 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tube 2003 HEXFET® Obsolete 1 (Unlimited) 6 EAR99 Non-RoHS Compliant SOT-23-6 Thin, TSOT-23-6 Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G6 150°C Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE 2W Ta SWITCHING 0.098Ohm 30V SILICON P-Channel 98m Ω @ 3.8A, 10V 2.5V @ 250μA 511pF @ 25V 17nC @ 10V 3.8A 3.8A Ta 30V 15A 4.5V 10V ±20V
IPA126N10N3GXKSA1 IPA126N10N3GXKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tube 2008 OptiMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 33W Tc SWITCHING 0.0126Ohm 100V SILICON N-Channel 12.6m Ω @ 35A, 10V 3.5V @ 45μA 2500pF @ 50V 35nC @ 10V 35A 35A Tc 100V 140A 90 mJ 6V 10V ±20V
AUIRFR4105Z AUIRFR4105Z Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm 24.5MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 48W 10 ns 2V 48W Tc 30A SWITCHING 26 ns SILICON N-Channel 24.5m Ω @ 18A, 10V 4V @ 250μA 740pF @ 25V 27nC @ 10V 40ns 24 ns 20V 55V 20A Tc 29 mJ 10V ±20V
IPI80N06S208AKSA1 IPI80N06S208AKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tube 2006 OptiMOS™ Discontinued 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE 215W Tc 0.008Ohm 55V SILICON N-Channel 8m Ω @ 58A, 10V 4V @ 150μA 2860pF @ 25V 96nC @ 10V 80A 80A Tc 55V 320A 450 mJ 10V ±20V
IRFH5255TRPBF IRFH5255TRPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tape & Reel (TR) 2010 HEXFET® Obsolete 1 (Unlimited) 5 EAR99 5.9944mm RoHS Compliant Lead Free No 8 8-PowerVDFN 838.2μm 5mm 6MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL R-PDSO-N5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W 7.9 ns 3.6W Ta 26W Tc 51A SWITCHING 6.5 ns SILICON N-Channel 6m Ω @ 15A, 10V 2.35V @ 25μA 988pF @ 13V 14.5nC @ 10V 10.7ns 3.8 ns 20V 25V 15A Ta 51A Tc 60A 53 mJ 4.5V 10V ±20V
SI4420DYTR SI4420DYTR Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.009Ohm 30V SILICON N-Channel 9m Ω @ 12.5A, 10V 1V @ 250μA 2240pF @ 15V 78nC @ 10V 12.5A 12.5A Ta 30V 50A 400 mJ 4.5V 10V ±20V
AUIRLR2703TRL AUIRLR2703TRL Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 45W 8.5 ns 45W Tc 23A SWITCHING 0.045Ohm 12 ns SILICON N-Channel 45m Ω @ 14A, 10V 1V @ 250μA 450pF @ 25V 15nC @ 4.5V 140ns 20 ns 16V 30V 20A 20A Tc 96A 200 mJ
IRF7402TRPBF IRF7402TRPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 1999 HEXFET® Not For New Designs 1 (Unlimited) 8 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 6.8A No 8 FAST SWITCHING 8-SOIC (0.154, 3.90mm Width) 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 SINGLE WITH BUILT-IN DIODE 2.5W 5.1 ns 2.5W Ta 6.8A SWITCHING 0.035Ohm 24 ns SILICON N-Channel 35m Ω @ 4.1A, 4.5V 700mV @ 250μA 650pF @ 15V 22nC @ 4.5V 47ns 32 ns 12V 20V 6.8A Ta 54A 2.7V 4.5V ±12V
IPP50N12S3L15AKSA1 IPP50N12S3L15AKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 2016 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant not_compliant ENHANCEMENT MODE e3 Tin (Sn) SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-220AB N-CHANNEL 0.0209Ohm 120V METAL-OXIDE SEMICONDUCTOR SILICON 50A 200A 330 mJ
IRFR3704TRL IRFR3704TRL Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 90W Tc N-Channel 9.5m Ω @ 15A, 10V 3V @ 250μA 1996pF @ 10V 19nC @ 4.5V 75A Tc 20V 10V ±20V
BAR8802LRHE6327XTSA1 BAR8802LRHE6327XTSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 6 Weeks Surface Mount Tape & Reel (TR) 2005 Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free Gold 100mA 2 LOW DISTORTION SOD-882 2.5Ohm 150°C TJ 80V POSITIVE-INTRINSIC-NEGATIVE 8541.10.00.80 100mA Switch e4 BOTTOM NO LEAD NOT SPECIFIED NOT SPECIFIED BAR88 SILICON 1 PIN - Single 100mA 100mA 1.2V Halogen Free Single 250mW 500 ns 80V L B 0.4pF 0.4pF @ 1V 1MHz 600mOhm @ 10mA 100MHz 0.5 μs
IRF6629TR1PBF IRF6629TR1PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tape & Reel (TR) 2006 HEXFET® Obsolete 1 (Unlimited) SMD/SMT 150°C -40°C RoHS Compliant Lead Free 29A No 5 DirectFET™ Isometric MX No SVHC 506μm 5.05mm 2.1MOhm Surface Mount -40°C~150°C TJ 25V MOSFET (Metal Oxide) 100W 20 ns 1.8V 2.7mOhm DIRECTFET™ MX 2.8W Ta 100W Tc 23A 20 ns N-Channel 2.1mOhm @ 29A, 10V 2.35V @ 100μA 4260pF @ 13V 51nC @ 4.5V 67ns 7.4 ns 20V 25V 25V 1.8 V 29A Ta 180A Tc 25V 4.26nF 4.5V 10V ±20V 2.1 mΩ
IPB47N10S33ATMA1 IPB47N10S33ATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tape & Reel (TR) 2001 SIPMOS® Last Time Buy 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE 175W Tc 0.033Ohm 100V SILICON N-Channel 33m Ω @ 33A, 10V 4V @ 2mA 2500pF @ 25V 105nC @ 10V 47A 47A Tc 100V 188A 400 mJ 10V ±20V
BTS244Z E3062A BTS244Z E3062A Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tape & Reel (TR) 1999 TEMPFET® Obsolete 1 (Unlimited) 4 RoHS Compliant AVALANCHE RATED TO-263-5, D2Pak (4 Leads + Tab), TO-263BB compliant Surface Mount -40°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G4 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR DRAIN 170W Tc SWITCHING 0.018Ohm 55V SILICON N-Channel 13m Ω @ 19A, 10V 2V @ 130μA 2660pF @ 25V 130nC @ 10V Temperature Sensing Diode 35A 35A Tc 55V 188A 1650 mJ 4.5V 10V ±20V
Settings Need Help?
Top FAQ's

How can I quickly find answers to my questions?

Please visit the Help & Support area of our website to find information regarding ordering, shipping, delivery and more.

What is my Order Status?

Registered users can track orders from their account dropdown, or click here. *Order Status may take 12 hours to update after initial order is placed.

How do I return product?

Users can begin the returns process by starting with our Returns Page.

How do I find price and availability?

Quotes can be created by registered users in myLists.

How do I create a 'HK JDW' Account?

Visit the Registration Page and enter the required information. You will receive an email confirmation when your registration is complete.

United Kingdom/GBP Summary
Fast Shipping Fast Delivery

Orders are typically delivered to United Kingdom within 48 hours depending on location.

Free Shipping Free Shipping

Free delivery to United Kingdom on orders of £33 or more. A delivery charge of £12 will be billed on all orders less than £33.

Incoterms Incoterms

DDP (Duty and customs paid by HK JDW)

Payment Options Payment Types

Credit account for qualified institutions and businesses

Payment in Advance by Wire Transfer

Visa Mastercard American Express PayPal Apple Pay Google Pay

Marketplace Marketplace Product

More Products From Fully Authorized Partners

Average Time to Ship 1-3 Days, extra ship charges may apply. Please see product page, cart, and checkout for actual ship speed.

Incoterms: CPT (Duty, customs, and applicable VAT/Tax due at time of delivery)

For more information visit Help & Support