Call us: +86 0755-82563503

Currency: $ US Dollar

Items : %s%s

Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRFU7546PBF IRFU7546PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 99W Tc 56A N-Channel 7.9m Ω @ 43A, 10V 3.7V @ 100μA 3020pF @ 25V 87nC @ 10V 56A Tc 60V 6V 10V ±20V
IRFR13N20DCTRRP IRFR13N20DCTRRP Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tape & Reel (TR) 2000 HEXFET® Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 110W Tc N-Channel 235m Ω @ 8A, 10V 5.5V @ 250μA 830pF @ 25V 38nC @ 10V 13A Tc 200V 10V ±30V
IRFZ44ZSPBF IRFZ44ZSPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 16 Weeks Surface Mount Tube 2003 HEXFET® Discontinued 1 (Unlimited) EAR99 10.668mm ROHS3 Compliant Lead Free 51A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 13.9mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) 1 Single 80W 14 ns 4V 80W Tc 35 ns 51A 33 ns N-Channel 13.9m Ω @ 31A, 10V 4V @ 250μA 1420pF @ 25V 43nC @ 10V 68ns 41 ns 20V 55V 55V 4 V 51A Tc 10V ±20V
BTS282Z E3230 BTS282Z E3230 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tube 2001 TEMPFET® Obsolete 1 (Unlimited) 7 EAR99 RoHS Compliant AVALANCHE RATED TO-220-7 compliant Through Hole -40°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T7 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR DRAIN 300W Tc SWITCHING 0.0095Ohm 49V SILICON N-Channel 6.5m Ω @ 36A, 10V 2V @ 240μA 4800pF @ 25V 232nC @ 10V Temperature Sensing Diode 80A 80A Tc 49V 320A 2000 mJ 4.5V 10V ±20V
IPB06N03LAT IPB06N03LAT Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tape & Reel (TR) 2006 OptiMOS™ Obsolete 1 (Unlimited) RoHS Compliant Lead Free 50A 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ 25V MOSFET (Metal Oxide) PG-TO263-3-2 83W Tc 50A N-Channel 5.9mOhm @ 30A, 10V 2V @ 40μA 2653pF @ 15V 22nC @ 5V 25ns 50A Tc 25V 2.653nF 4.5V 10V ±20V 5.9 mΩ
IRLR8729TRLPBF IRLR8729TRLPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 52 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.26mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 Not Qualified 1 TO-252AA DRAIN Single 55W 10 ns 55W Tc 58A SWITCHING 0.0089Ohm 11 ns SILICON N-Channel 8.9m Ω @ 25A, 10V 2.35V @ 25μA 1350pF @ 15V 16nC @ 4.5V 47ns 10 ns 20V 30V 50A 58A Tc 260A 74 mJ 4.5V 10V ±20V
IRFSL4410 IRFSL4410 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tube 2007 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 250W Tc SWITCHING 0.009Ohm 100V SILICON N-Channel 10m Ω @ 58A, 10V 4V @ 150μA 5150pF @ 50V 180nC @ 10V 97A 96A Tc 100V 390A 242 mJ 10V ±20V
BSZ065N03LSATMA1 BSZ065N03LSATMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2012 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.1W 2V 30V 2.1W Ta 26W Tc 12A SWITCHING SILICON N-Channel 6.5m Ω @ 20A, 10V 2V @ 250μA 670pF @ 15V 10nC @ 10V 3.4ns 20V 12A Ta 40A Tc 4.5V 10V ±20V
IRF7534D1PBF IRF7534D1PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tube 2005 FETKY™ Obsolete 1 (Unlimited) 150°C -55°C 3.05mm RoHS Compliant Lead Free 8 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) No SVHC 910μm 3.05mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 10 ns -1.2V 55mOhm Micro8™ 1.25W Ta 4.3A 60 ns P-Channel 55mOhm @ 4.3A, 4.5V 1.2V @ 250μA 1066pF @ 10V 15nC @ 5V 12V Schottky Diode (Isolated) 4.3A Ta 20V 1.066nF 2.5V 4.5V ±12V 55 mΩ
IPA65R225C7XKSA1 IPA65R225C7XKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 18 Weeks Through Hole Tube 2008 CoolMOS™ C7 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 9 ns 650V 29W Tc 7A SWITCHING 0.225Ohm 48 ns SILICON N-Channel 225m Ω @ 4.8A, 10V 4V @ 240μA 996pF @ 400V 20nC @ 10V 6ns 10 ns 20V 7A 7A Tc 41A 48 mJ 10V ±20V
IPS040N03LGAKMA1 IPS040N03LGAKMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Through Hole Tube 2008 OptiMOS™ no Obsolete 1 (Unlimited) 3 EAR99 6.73mm Non-RoHS Compliant 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-251-3 Stub Leads, IPak No SVHC not_compliant 6.22mm 2.39mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 Single 79W 7.4 ns 79W Tc 90A SWITCHING 0.0059Ohm 27 ns SILICON N-Channel 4m Ω @ 30A, 10V 2.2V @ 250μA 3900pF @ 15V 38nC @ 10V 20V 89A 90A Tc 30V 400A 60 mJ 4.5V 10V
BSS123E6327 BSS123E6327 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tape & Reel (TR) 1999 SIPMOS® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead 170mA 3 LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 360mW 360mW Ta 170mA SWITCHING SILICON N-Channel 6 Ω @ 170mA, 10V 1.8V @ 50μA 69pF @ 25V 2.67nC @ 10V 5ns 20V 170mA Ta 6 pF 4.5V 10V ±20V
IPD30N06S2L23ATMA3 IPD30N06S2L23ATMA3 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 55V 100W Tc 30A SILICON N-Channel 23m Ω @ 22A, 10V 2V @ 50μA 1091pF @ 25V 42nC @ 10V 30A Tc 120A 150 mJ 4.5V 10V ±20V
IPC60R280E6X7SA1 IPC60R280E6X7SA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Obsolete 1 (Unlimited)
64-4123PBF 64-4123PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) RoHS Compliant DPAK
IPC302N12N3X1SA1 IPC302N12N3X1SA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 18 Weeks Bulk 2013 OptiMOS™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free Die Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE UNSPECIFIED NO LEAD NOT SPECIFIED NOT SPECIFIED YES R-XXUC-N 1 SINGLE WITH BUILT-IN DIODE Halogen Free 0.1Ohm 120V SILICON N-Channel 100m Ω @ 2A, 10V 4V @ 275μA 1A Tj 120V 10V
IRLR3103TRLPBF IRLR3103TRLPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tape & Reel (TR) 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 107W Tc SWITCHING 0.019Ohm 30V SILICON N-Channel 19m Ω @ 33A, 10V 1V @ 250μA 1600pF @ 25V 50nC @ 4.5V 20A 55A Tc 30V 220A 240 mJ 4.5V 10V ±16V
IPI120N08S404AKSA1 IPI120N08S404AKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 14 Weeks Through Hole Tube 2013 Automotive, AEC-Q101, OptiMOS™ yes Obsolete 1 (Unlimited) 3 ROHS3 Compliant Contains Lead TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 80V 179W Tc 120A 0.0044Ohm SILICON N-Channel 4.4m Ω @ 100A, 10V 4V @ 120μA 6450pF @ 25V 95nC @ 10V 120A Tc 480A 310 mJ 10V ±20V
SPS03N60C3BKMA1 SPS03N60C3BKMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tube 2006 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant AVALANCHE RATED TO-251-3 Stub Leads, IPak compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-251AA 38W Tc 600V SILICON N-Channel 1.4 Ω @ 2A, 10V 3.9V @ 135μA 400pF @ 25V 17nC @ 10V 3.2A 3.2A Tc 650V 9.6A 100 mJ 10V ±20V
64-2096PBF 64-2096PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tape & Reel (TR) 2010 HEXFET® Obsolete 1 (Unlimited) TO-263-7, D2Pak (6 Leads + Tab), TO-263CB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 300W Tc N-Channel 3.8m Ω @ 110A, 10V 4V @ 250μA 7580pF @ 25V 260nC @ 10V 160A Tc 75V 10V ±20V
IRF6633TR1PBF IRF6633TR1PBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tape & Reel (TR) 2006 HEXFET® Obsolete 1 (Unlimited) 150°C -40°C 6.35mm RoHS Compliant Lead Free 16A No 5 DirectFET™ Isometric MP No SVHC 676μm 5.05mm 5.6MOhm Surface Mount -40°C~150°C TJ 20V MOSFET (Metal Oxide) 1 89W 9.7 ns 1.8V 9.4mOhm DIRECTFET™ MP 2.3W Ta 89W Tc 13A 12 ns N-Channel 5.6mOhm @ 16A, 10V 2.2V @ 250μA 1250pF @ 10V 17nC @ 4.5V 31ns 4.3 ns 20V 20V 1.8 V 16A Ta 59A Tc 20V 1.25nF 4.5V 10V ±20V 5.6 mΩ
SPP16N50C3HKSA1 SPP16N50C3HKSA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Through Hole Tube 2004 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant 3 AVALANCHE RATED TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 160W 10 ns 160W Tc 16A SWITCHING 0.28Ohm 500V 50 ns SILICON N-Channel 280m Ω @ 10A, 10V 3.9V @ 675μA 1600pF @ 25V 66nC @ 10V 8ns 20V 16A Tc 560V 48A 460 mJ 10V ±20V
IPD038N04NGBTMA1 IPD038N04NGBTMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tape & Reel (TR) 2011 OptiMOS™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 260 40 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 94W 94W Tc 90A SWITCHING 0.0038Ohm 40V SILICON N-Channel 3.8m Ω @ 90A, 10V 4V @ 45μA 4500pF @ 20V 56nC @ 10V 20V 90A Tc 40V 400A 55 mJ 10V ±20V
BSP299 E6327 BSP299 E6327 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Tape & Reel (TR) 2007 SIPMOS® Discontinued 1 (Unlimited) 4 EAR99 Non-RoHS Compliant AVALANCHE RATED TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 DUAL GULL WING 255 30 4 YES R-PDSO-G4 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.8W Ta 4Ohm 500V SILICON N-Channel 4 Ω @ 400mA, 10V 4V @ 1mA 400pF @ 25V 0.4A 400mA Ta 500V 1.6A 130 mJ 10V ±20V
SIPC26N80C3 SIPC26N80C3 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Bulk 2011 Obsolete 1 (Unlimited) Non-RoHS Compliant Contains Lead
IRF3706S IRF3706S Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 Tube 2004 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 88W Tc N-Channel 8.5m Ω @ 15A, 10V 2V @ 250μA 2410pF @ 10V 35nC @ 4.5V 77A Tc 20V 2.8V 10V ±12V
SPU03N60C3BKMA1 SPU03N60C3BKMA1 Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 12 Weeks Tube 2003 CoolMOS™ no Last Time Buy 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA not_compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 38W Tc SWITCHING 600V SILICON N-Channel 1.4 Ω @ 2A, 10V 3.9V @ 135μA 400pF @ 25V 17nC @ 10V 3.2A 3.2A Tc 650V 9.6A 100 mJ 10V ±20V
IRLR3915TRPBF IRLR3915TRPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free 61A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.26mm 6.22mm 14mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 120W 7.4 ns 3V 120W Tc 30A SWITCHING 26 ns SILICON N-Channel 14m Ω @ 30A, 10V 3V @ 250μA 1870pF @ 25V 92nC @ 10V 51ns 100 ns 16V 55V 55V 3 V 30A Tc 240A 200 mJ 5V 10V ±16V
BUZ73AE3046XK BUZ73AE3046XK Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Through Hole Tube 2000 SIPMOS® Discontinued 1 (Unlimited) 150°C -55°C ROHS3 Compliant 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) PG-TO220-3 40W Tc 5.5A N-Channel 600mOhm @ 4.5A, 10V 4V @ 1mA 530pF @ 25V 5.5A Tc 200V 530pF 10V ±20V 600 mΩ
IRLR3110ZPBF IRLR3110ZPBF Infineon Technologies 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 download Surface Mount Tube 2006 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 14MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 140mW 24 ns 2.5V 140W Tc 51 ns 42A 33 ns N-Channel 14m Ω @ 38A, 10V 2.5V @ 100μA 3980pF @ 25V 48nC @ 4.5V 110ns 48 ns 16V 100V 100V 2.5 V 42A Tc 4.5V 10V ±16V
Settings Need Help?
Top FAQ's

How can I quickly find answers to my questions?

Please visit the Help & Support area of our website to find information regarding ordering, shipping, delivery and more.

What is my Order Status?

Registered users can track orders from their account dropdown, or click here. *Order Status may take 12 hours to update after initial order is placed.

How do I return product?

Users can begin the returns process by starting with our Returns Page.

How do I find price and availability?

Quotes can be created by registered users in myLists.

How do I create a 'HK JDW' Account?

Visit the Registration Page and enter the required information. You will receive an email confirmation when your registration is complete.

United Kingdom/GBP Summary
Fast Shipping Fast Delivery

Orders are typically delivered to United Kingdom within 48 hours depending on location.

Free Shipping Free Shipping

Free delivery to United Kingdom on orders of £33 or more. A delivery charge of £12 will be billed on all orders less than £33.

Incoterms Incoterms

DDP (Duty and customs paid by HK JDW)

Payment Options Payment Types

Credit account for qualified institutions and businesses

Payment in Advance by Wire Transfer

Visa Mastercard American Express PayPal Apple Pay Google Pay

Marketplace Marketplace Product

More Products From Fully Authorized Partners

Average Time to Ship 1-3 Days, extra ship charges may apply. Please see product page, cart, and checkout for actual ship speed.

Incoterms: CPT (Duty, customs, and applicable VAT/Tax due at time of delivery)

For more information visit Help & Support