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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IPB160N04S203ATMA1 IPB160N04S203ATMA1 Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2006 OptiMOS™ Discontinued 1 (Unlimited) 6 EAR99 ROHS3 Compliant ULTRA-LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING YES R-PSSO-G6 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc 0.0029Ohm 40V SILICON N-Channel 2.9m Ω @ 60A, 10V 4V @ 250μA 5300pF @ 25V 170nC @ 10V 160A 160A Tc 40V 640A 810 mJ 10V ±20V
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0.00000000 download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C RoHS Compliant Lead Free 36A 4 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 20mOhm Surface Mount -55°C~175°C TJ 20V MOSFET (Metal Oxide) 1 Single 47W 3V 28mOhm D-Pak 47W Tc 36A 10 ns N-Channel 20mOhm @ 18A, 10V 3V @ 250μA 670pF @ 10V 9.7nC @ 4.5V 78ns 4.5 ns 20V 20V 20V 3 V 36A Tc 20V 670pF 4.5V 10V ±20V 20 mΩ
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0.00000000 download 12 Weeks Through Hole Tube 2009 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free Tin No 3 TO-220-3 No SVHC 9.02mm 4.826mm 1.95MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 230W 36 ns 1.9V 230W Tc 36 ns 260A SWITCHING 33 ns SILICON N-Channel 1.95m Ω @ 60A, 10V 2.35V @ 150μA 8420pF @ 15V 86nC @ 4.5V 170ns 60 ns 20V 30V 30V 1.9 V 120A 260A Tc 1050A 520 mJ 4.5V 10V ±20V
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0.00000000 download Tape & Reel (TR) 2008 yes Obsolete 1 (Unlimited) 2 RoHS Compliant not_compliant ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 260 40 4 YES R-PSSO-G2 150°C Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN N-CHANNEL SWITCHING 0.399Ohm 500V METAL-OXIDE SEMICONDUCTOR SILICON 9A 20A 215 mJ
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0.00000000 download 13 Weeks Through Hole Tube 2013 HEXFET® Not For New Designs 1 (Unlimited) 175°C -55°C ROHS3 Compliant Lead Free No 3 TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 1 91W 14 ns 22.5mOhm I-PAK 91W Tc 35A 43 ns N-Channel 28.5mOhm @ 21A, 10V 4V @ 50μA 1690pF @ 25V 59nC @ 10V 42ns 34 ns 20V 100V 35A Tc 100V 1.69nF 10V ±20V 28.5 mΩ
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0.00000000 download 18 Weeks Tube 2014 CoolMOS™ P7 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 25W Tc N-Channel 600m Ω @ 1.8A, 10V 3.5V @ 90μA 364pF @ 400V 10.5nC @ 10V 8.5A Tc 700V 10V ±16V
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0.00000000 download 14 Weeks Surface Mount Tube 2013 HEXFET®, StrongIRFET™ Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 375W 52 ns 3.7V 375W Tc 195A SWITCHING 0.002Ohm 172 ns SILICON N-Channel 2m Ω @ 100A, 10V 3.7V @ 250μA 13703pF @ 25V 411nC @ 10V 141ns 104 ns 3.7V 60V 195A Tc 760A 6V 10V ±20V
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0.00000000 download Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 110W Tc SWITCHING 0.023Ohm 60V SILICON N-Channel 23m Ω @ 29A, 10V 4V @ 250μA 1360pF @ 25V 60nC @ 10V 48A 48A Tc 60V 192A 220 mJ 10V ±20V
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0.00000000 Tube 2005 HEXFET® Obsolete 1 (Unlimited) TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-262 3.8W Ta 48W Tc P-Channel 480mOhm @ 4A, 10V 4V @ 250μA 350pF @ 25V 27nC @ 10V 6.8A Tc 100V 10V ±20V
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0.00000000 download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) SMD/SMT 175°C -55°C RoHS Compliant Lead Free 77A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 8.5MOhm Surface Mount -55°C~175°C TJ 20V MOSFET (Metal Oxide) 1 Single 88W 6.8 ns 10.5mOhm D2PAK 88W Tc 77A 17 ns N-Channel 8.5mOhm @ 15A, 10V 2V @ 250μA 2410pF @ 10V 35nC @ 4.5V 87ns 4.8 ns 12V 20V 20V 2 V 77A Tc 20V 2.41nF 2.8V 10V ±12V 8.5 mΩ
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0.00000000 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 188W 30 ns 3V 60V 188W Tc 90A SWITCHING 40 ns SILICON N-Channel 3.7m Ω @ 90A, 10V 4V @ 90μA 11000pF @ 30V 98nC @ 10V 70ns 5 ns 20V 90A Tc 10V ±20V
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0.00000000 18 Weeks Not For New Designs 2 (1 Year) ROHS3 Compliant
IRF7241 IRF7241 Infineon Technologies 0.0000
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0.00000000 Tube 2004 HEXFET® Obsolete 1 (Unlimited) 8 Non-RoHS Compliant ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.041Ohm 40V SILICON P-Channel 41m Ω @ 6.2A, 10V 3V @ 250μA 3220pF @ 25V 80nC @ 10V 6.2A 6.2A Ta 40V 4.5V 10V ±20V
IRFR12N25D IRFR12N25D Infineon Technologies 0.0000
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0.00000000 download Tube 2001 HEXFET® Obsolete 1 (Unlimited) EAR99 Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 144W Tc N-Channel 260m Ω @ 8.4A, 10V 5V @ 250μA 810pF @ 25V 35nC @ 10V 14A Tc 250V 10V ±30V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free DirectFET™ Isometric MF 2.3mOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 74W Tc 135A N-Channel 2.3m Ω @ 81A, 10V 3.9V @ 100μA 3913pF @ 25V 81nC @ 10V 135A Tc 40V 6V 10V ±20V
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0.00000000 download 10 Weeks Surface Mount Tape & Reel (TR) 2001 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free 162A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm 4mOhm Surface Mount -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 3.8W 17 ns 3.8W Ta 200W Tc 162A SWITCHING 72 ns SILICON N-Channel 4m Ω @ 95A, 10V 4V @ 250μA 7360pF @ 25V 200nC @ 10V 140ns 26 ns 20V 40V 75A 162A Tc 650A 10V ±20V
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0.00000000 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 130W Tc SWITCHING 0.044Ohm 100V SILICON N-Channel 44m Ω @ 16A, 10V 4V @ 250μA 1960pF @ 25V 71nC @ 10V 33A 33A Tc 100V 110A 185 mJ 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2007 OptiMOS™ Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free 100A AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN GULL WING 260 40 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 300W 300W Tc 100A 0.003Ohm 77 ns SILICON N-Channel 3m Ω @ 80A, 10V 4V @ 230μA 21620pF @ 25V 480nC @ 10V 67ns 60 ns 20V 55V 100A Tc 400A 2390 mJ 10V ±20V
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0.00000000 download 12 Weeks Tape & Reel (TR) 2011 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 71W Tc 0.0319Ohm 100V SILICON N-Channel 24m Ω @ 35A, 10V 2.4V @ 39μA 2700pF @ 25V 39nC @ 10V 35A 35A Tc 100V 140A 175 mJ 4.5V 10V ±20V
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0.00000000 16 Weeks Active 2 (1 Year) ROHS3 Compliant
IRF7702TRPBF IRF7702TRPBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2006 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 3.0988mm RoHS Compliant Lead Free No 8 8-TSSOP (0.173, 4.40mm Width) 1.0414mm 4.4958mm 14mOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 1.5W 16 ns 14mOhm 8-TSSOP 1.5W Tc -8A 320 ns P-Channel 14mOhm @ 8A, 4.5V 1.2V @ 250μA 3470pF @ 10V 81nC @ 4.5V 21ns 250 ns 8V -12V 8A Tc 12V 3.47nF 1.8V 4.5V ±8V 14 mΩ
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0.00000000 download Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -40°C~175°C TJ MOSFET (Metal Oxide) 79W Tc N-Channel 50m Ω @ 4.7A, 10V 1V @ 250μA 740pF @ 50V 42nC @ 10V 26A Tc 55V 4.5V 10V ±20V
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0.00000000 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.66mm ROHS3 Compliant Lead Free Tin 120A No 3 TO-220-3 No SVHC 9.02mm 4.82mm 5.8MOhm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 230mW 15 ns 4V 230W Tc 33 ns 120A SWITCHING 38 ns SILICON N-Channel 5.8m Ω @ 75A, 10V 4V @ 150μA 4750pF @ 50V 110nC @ 10V 64ns 65 ns 20V 75V 75V 4 V 120A Tc 480A 10V ±20V
IRF1607PBF IRF1607PBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2001 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 142A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.826mm 7.5Ohm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 380W 22 ns 380W Tc 142A SWITCHING 84 ns SILICON N-Channel 7.5m Ω @ 85A, 10V 4V @ 250μA 7750pF @ 25V 320nC @ 10V 130ns 86 ns 20V 75V 75V 4 V 75A 142A Tc 570A 10V ±20V
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0.00000000 download 14 Weeks Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Lead Free 44A No 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA 6.22mm 2.3876mm 27mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 69W 7.3 ns 107W Tc 44A SWITCHING 47 ns SILICON N-Channel 27m Ω @ 26A, 10V 4V @ 250μA 1300pF @ 25V 65nC @ 10V 69ns 60 ns 20V 55V 20A 44A Tc 160A 210 mJ 10V ±20V
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