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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRF7822PBF IRF7822PBF Infineon Technologies 0.0000
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0.00000000 Active 1 (Unlimited) ROHS3 Compliant
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0.00000000 download Through Hole Tube 2005 SIPMOS® yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 15 ns 40W Tc 5.5A 0.6Ohm 200V 100 ns SILICON N-Channel 600m Ω @ 3.5A, 5V 2V @ 1mA 840pF @ 25V 60ns 40 ns 20V 5.5A Tc 200V 22A 120 mJ 5V ±20V
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0.00000000 download Through Hole Tube 2003 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant Contains Lead 80A AVALANCHE RATED TO-220-3 unknown Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e0 TIN LEAD SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 300W Tc 80A 0.0051Ohm SILICON N-Channel 5.1m Ω @ 80A, 10V 4V @ 250μA 6790pF @ 25V 170nC @ 10V 80A Tc 320A 810 mJ 10V ±20V
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0.00000000 download Through Hole Tube 2006 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 300W 19 ns 40V 300W Tc 80A 77 ns SILICON N-Channel 3.4m Ω @ 80A, 10V 2V @ 250μA 6000pF @ 25V 213nC @ 10V 50ns 27 ns 20V 80A Tc 4.5V 10V ±20V
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0.00000000 download Surface Mount Tube 2004 FETKY™ Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant No 8 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 1.25W 5.7 ns 135mOhm Micro8™ 1.3W Ta 2.4A 15 ns N-Channel 135mOhm @ 1.7A, 4.5V 700mV @ 250μA 260pF @ 15V 8nC @ 4.5V 24ns 16 ns 12V 20V Schottky Diode (Isolated) 2.4A Ta 20V 260pF 2.7V 4.5V ±12V 135 mΩ
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 7 EAR99 ROHS3 Compliant No 13 HIGH RELIABILITY DirectFET™ Isometric L6 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM R-XBCC-N7 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 94W 21 ns 3.3W Ta 94W Tc 130A SWITCHING 0.0016Ohm 39 ns SILICON N-Channel 1.6m Ω @ 109A, 10V 4V @ 250μA 7471pF @ 25V 194nC @ 10V 77ns 38 ns 20V 40V 35A 35A Ta 130A Tc 736A 538 mJ 10V ±20V
IPA023N04NM3SXKSA1 IPA023N04NM3SXKSA1 Infineon Technologies 0.0000
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0.00000000 7 Weeks Active
IRF7492 IRF7492 Infineon Technologies 0.0000
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0.00000000 download Tube 2002 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 2.5W Ta N-Channel 79m Ω @ 2.2A, 10V 2.5V @ 250μA 1820pF @ 25V 59nC @ 10V 3.7A Ta 200V 10V ±20V
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0.00000000 Through Hole 2011 Obsolete 1 (Unlimited) 175°C -55°C ROHS3 Compliant Tin 3 160A 160ns 20V
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0.00000000 download Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 57W Tc SWITCHING 0.11Ohm 55V SILICON P-Channel 110m Ω @ 9.6A, 10V 4V @ 250μA 650pF @ 25V 32nC @ 10V 18A 18A Tc 55V 64A 150 mJ 10V ±20V
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0.00000000 download Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G8 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.0082Ohm 20V SILICON P-Channel 8.2m Ω @ 15A, 4.5V 1.2V @ 250μA 7980pF @ 15V 130nC @ 4.5V 15A 15A Ta 20V 60A 2.5V 4.5V ±12V
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0.00000000 download 12 Weeks Tube 2008 CoolMOS™ C6 yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-251-3 Short Leads, IPak, TO-251AA not_compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE 63W Tc SWITCHING 0.6Ohm 600V SILICON N-Channel 600m Ω @ 2.4A, 10V 3.5V @ 200μA 440pF @ 100V 20.5nC @ 10V 7.3A Tc 600V 19A 133 mJ 10V ±20V
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.572mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 Other Transistors 1 DRAIN Single 250W 21 ns -5V 250W Tc -150A SWITCHING 35 ns SILICON P-Channel 150m Ω @ 16A, 10V 5V @ 250μA 2210pF @ 25V 110nC @ 10V 70ns 30 ns 20V -150V -5 V 27A 27A Tc 150V 10V ±20V
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0.00000000 download Tape & Reel (TR) 2003 SIPMOS® Obsolete 1 (Unlimited) SC-70, SOT-323 unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE YES FET General Purpose Power Single 500mW Ta N-Channel 5 Ω @ 230mA, 10V 1.8V @ 26μA 45pF @ 25V 1.5nC @ 10V 0.23A 230mA Ta 60V 4.5V 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2008 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 4.9784mm RoHS Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) Unknown 1.4986mm 3.9878mm 44MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 2.5W 9 ns 44mOhm 8-SO 2.5W Ta 5.1A 29 ns N-Channel 44mOhm @ 3.1A, 10V 4V @ 250μA 1783pF @ 25V 53nC @ 10V 10ns 14 ns 20V 150V 5.1A Ta 150V 1.783nF 10V ±20V 44 mΩ
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0.00000000 download Through Hole Tube 2003 OptiMOS™ Discontinued 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 80A AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-262-3 Long Leads, I2Pak, TO-262AA unknown Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 150W Tc 80A SWITCHING 0.0095Ohm SILICON N-Channel 6.2m Ω @ 80A, 10V 2V @ 80μA 2530pF @ 25V 68nC @ 10V 135A 80A Tc 320A 240 mJ 4.5V 10V ±20V
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0.00000000 download 14 Weeks Surface Mount Tube 2013 HEXFET®, StrongIRFET™ Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 375W 52 ns 3.7V 375W Tc 195A SWITCHING 0.002Ohm 172 ns SILICON N-Channel 2m Ω @ 100A, 10V 3.7V @ 250μA 13703pF @ 25V 411nC @ 10V 141ns 104 ns 3.7V 60V 195A Tc 760A 6V 10V ±20V
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0.00000000 download 10 Weeks Surface Mount Cut Tape (CT) 2012 SIPMOS® yes Active 1 (Unlimited) 4 EAR99 6.5mm ROHS3 Compliant Lead Free Tin 4 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA 1.6mm 3.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 4 1 DRAIN Halogen Free Single 1.8W 4.6 ns -100V 1.8W Ta 1A 0.8Ohm 21.2 ns SILICON P-Channel 800m Ω @ 1A, 10V 1V @ 380μA 372pF @ 25V 16.5nC @ 10V 4.3ns 8.3 ns 20V 1A 1A Tc 100V 4.5V 10V ±20V
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