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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Operating Temperature (Min) Number of Channels Subcategory Qualification Status Power - Max Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Transistor Type Input Capacitance Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Frequency - Transition
IRFSL7540PBF IRFSL7540PBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC Through Hole 2.084002g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 1 DRAIN Single 12 ns 3.7V 160W Tc 110A SWITCHING 58 ns SILICON N-Channel 5.1m Ω @ 65A, 10V 3.7V @ 100μA 4555pF @ 25V 130nC @ 10V 76ns 56 ns 20V 60V 110A Tc 6V 10V ±20V
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0.00000000 download 14 Weeks Through Hole Tube 2008 OptiMOS™ Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead No 3 LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 17 ns -30V 137W Tc 80A 0.007Ohm 140 ns SILICON P-Channel 4.4m Ω @ 80A, 10V 2V @ 253μA 11300pF @ 25V 160nC @ 10V 11ns 40 ns 5V 80A Tc 30V 410 mJ 4.5V 10V +5V, -16V
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0.00000000 Tube 2000 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-262 3.8W Ta 140W Tc N-Channel 170mOhm @ 9.8A, 10V 5.5V @ 250μA 1100pF @ 25V 50nC @ 10V 16A Tc 200V 10V ±30V
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0.00000000 download 18 Weeks Tape & Reel (TR) 2013 CoolMOS™ CE yes Active 1 (Unlimited) EAR99 ROHS3 Compliant 3 SOT-223-3 No SVHC not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) 3V 5W Tc 4.8A N-Channel 1.4 Ω @ 900mA, 13V 3.5V @ 70μA 178pF @ 100V 8.2nC @ 10V 4.8A Tc 500V 13V ±20V
IRF3805 IRF3805 Infineon Technologies 0.0000
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0.00000000 download Tube 2003 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) SINGLE 225 30 NO R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 170W Tc SWITCHING 0.0065Ohm 55V SILICON N-Channel 6.5m Ω @ 66A, 10V 4V @ 250μA 3450pF @ 25V 110nC @ 10V 75A 75A Tc 55V 440A 250 mJ 10V ±20V
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free 110A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm Surface Mount -55°C~150°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 120W 12 ns 2.5W Ta 120W Tc 110A SWITCHING 0.0065Ohm 17 ns SILICON N-Channel 6.5m Ω @ 15A, 10V 3V @ 250μA 2980pF @ 10V 44nC @ 4.5V 220ns 12 ns 20V 20V 100A Tc 440A 460 mJ 4.5V 10V ±20V
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0.00000000 download Tape & Reel (TR) 2005 CoolMOS™ no Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 160W Tc SWITCHING 0.28Ohm 500V SILICON N-Channel 280m Ω @ 10A, 10V 3.9V @ 675μA 1600pF @ 25V 66nC @ 10V 16A 16A Tc 560V 48A 460 mJ 10V ±20V
IRFR4105Z IRFR4105Z Infineon Technologies 0.0000
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0.00000000 download Tube 1998 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 TIN LEAD SINGLE GULL WING 245 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 48W Tc SWITCHING 0.0245Ohm 55V SILICON N-Channel 24.5m Ω @ 18A, 10V 4V @ 250μA 740pF @ 25V 27nC @ 10V 30A 30A Tc 55V 120A 29 mJ 10V ±20V
IPI80N03S4L04AKSA1 IPI80N03S4L04AKSA1 Infineon Technologies 0.0000
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0.00000000 download Tube 2010 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant ULTRA LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 94W Tc 0.0037Ohm 30V SILICON N-Channel 3.7m Ω @ 80A, 10V 2.2V @ 45μA 5100pF @ 25V 75nC @ 10V 80A 80A Tc 30V 320A 95 mJ 4.5V 10V ±16V
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0.00000000 download 8 Weeks Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant TO-247-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-247AD 89W Tc SWITCHING 0.35Ohm 500V SILICON N-Channel 350m Ω @ 5.6A, 10V 3.5V @ 370μA 1020pF @ 100V 25nC @ 10V 10A 10A Tc 550V 22A 246 mJ 10V ±20V
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0.00000000 download Tape & Reel (TR) 2008 OptiMOS™ Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 260 40 4 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 125W Tc SWITCHING 0.0129Ohm 85V SILICON N-Channel 12.9m Ω @ 67A, 10V 4V @ 83μA 4340pF @ 40V 64nC @ 10V 67A 67A Tc 85V 268A 154 mJ 10V ±20V
BSS223PWH6327XTSA1 BSS223PWH6327XTSA1 Infineon Technologies 0.0000
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0.00000000 download 10 Weeks Surface Mount Cut Tape (CT) 2002 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 2mm ROHS3 Compliant Contains Lead -390mA 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED SC-70, SOT-323 No SVHC 800μm 1.25mm Surface Mount -55°C~150°C TJ -20V MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.21.00.95 e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 3 1 Halogen Free Single 3.8 ns -900mV -20V 250mW Ta 390mA 5.1 ns SILICON P-Channel 1.2 Ω @ 390mA, 4.5V 1.2V @ 1.5μA 56pF @ 15V 0.62nC @ 4.5V 5ns 12V 390mA Ta 20V 22 pF 2.5V 4.5V ±12V
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0.00000000 download Obsolete 1 (Unlimited) 3 RoHS Compliant ENHANCEMENT MODE SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 -55°C AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-262AA DRAIN N-CHANNEL 0.0055Ohm 75V METAL-OXIDE SEMICONDUCTOR SILICON 80A 320A 240 mJ
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0.00000000 download Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 90W Tc N-Channel 9.5m Ω @ 15A, 10V 3V @ 250μA 1996pF @ 10V 19nC @ 4.5V 75A Tc 20V 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 FETKY™ Obsolete 1 (Unlimited) EAR99 4.9784mm RoHS Compliant Lead Free 8.3A No 8 8-SOIC (0.154, 3.90mm Width) 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power Single 1.6W 2.5W Ta 8.3A N-Channel 25m Ω @ 7A, 4.5V 1V @ 250μA 17nC @ 5V 12V 30V Schottky Diode (Isolated) 8.3A Ta 4.5V ±12V
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0.00000000 download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 6.73mm RoHS Compliant Lead Free Tin 60A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.26mm 6.22mm Surface Mount -55°C~175°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 48W 41 ns 2.1V 48W Tc 19 ns 60A SWITCHING 0.0084Ohm 4.9 ns SILICON N-Channel 8.4m Ω @ 15A, 10V 2.55V @ 250μA 1190pF @ 10V 14nC @ 4.5V 8.9ns 12 ns 20V 20V 60A Tc 240A 4.5V 10V ±20V
IPB085N06L G IPB085N06L G Infineon Technologies 0.0000
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0.00000000 download Cut Tape (CT) 2009 OptiMOS™ Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB compliant Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 175°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 188W SWITCHING 0.0082Ohm 60V SILICON N-Channel 8.2m Ω @ 80A, 10V 2V @ 125μA 3500pF @ 30V 104nC @ 10V 80A 80A Tc 60V 320A 370 mJ
AUIRFR4620 AUIRFR4620 Infineon Technologies 0.0000
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0.00000000 download 36 Weeks Surface Mount Tube 2011 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 144W 13.4 ns 3V 144W Tc 24A SWITCHING 0.078Ohm 25.4 ns SILICON N-Channel 78m Ω @ 15A, 10V 5V @ 100μA 1710pF @ 50V 38nC @ 10V 22.4ns 14.8 ns 20V 200V 24A Tc 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 4.9784mm RoHS Compliant Lead Free 13A No 8 8-SOIC (0.154, 3.90mm Width) 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) 1 2.5W 16 ns 11mOhm 8-SO 2.5W Ta 13A 38 ns N-Channel 11mOhm @ 7A, 4.5V 3V @ 250μA 31nC @ 5V 20ns 16 ns 12V 30V 13A Ta 30V 4.5V ±12V 11 mΩ
IRLR8103VTRRPBF IRLR8103VTRRPBF Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 115W Tc N-Channel 9m Ω @ 15A, 10V 3V @ 250μA 2672pF @ 16V 27nC @ 5V 91A Tc 30V 4.5V 10V ±20V
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2012 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.1W 2V 30V 2.1W Ta 26W Tc 12A SWITCHING SILICON N-Channel 6.5m Ω @ 20A, 10V 2V @ 250μA 670pF @ 15V 10nC @ 10V 3.4ns 20V 12A Ta 40A Tc 4.5V 10V ±20V
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0.00000000 Tube 2002 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-262 3.8W Ta 200W Tc N-Channel 6mOhm @ 71A, 10V 1V @ 250μA 5000pF @ 25V 140nC @ 4.5V 140A Tc 30V 4.5V 10V ±16V
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0.00000000 download 20 Weeks Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 40W Tc SWITCHING 0.48Ohm 100V SILICON P-Channel 480m Ω @ 3.9A, 10V 4V @ 250μA 350pF @ 25V 27nC @ 10V 6.6A 6.6A Tc 100V 26A 100 mJ 10V ±20V
AUIRFZ48ZS AUIRFZ48ZS Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Surface Mount Tube 2011 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 8.6MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 91W 15 ns 91W Tc 61A SWITCHING 35 ns SILICON N-Channel 11m Ω @ 37A, 10V 4V @ 250μA 1720pF @ 25V 64nC @ 10V 69ns 39 ns 20V 55V 61A Tc 240A 10V ±20V
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