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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRF3707ZPBF IRF3707ZPBF Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2003 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C 10.5156mm RoHS Compliant Lead Free 59A No 3 TO-220-3 No SVHC 8.763mm 4.69mm 9.5Ohm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) 1 57W 9.8 ns 1.8V 12.5mOhm TO-220AB 57W Tc 21 ns 59A 12 ns N-Channel 9.5mOhm @ 21A, 10V 2.25V @ 25μA 1210pF @ 15V 15nC @ 4.5V 41ns 3.6 ns 20V 30V 30V 1.8 V 59A Tc 30V 1.21nF 4.5V 10V ±20V 9.5 mΩ
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0.00000000 download 26 Weeks Tape & Reel (TR) 2013 OptiMOS™ Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant 8-PowerTDFN not_compliant 1.1mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED YES R-PDSO-F5 1 1 SINGLE WITH BUILT-IN DIODE DRAIN 96W 9.6 ns 96W Tc 56A 150°C SWITCHING 10.8 ns SILICON N-Channel 16m Ω @ 28A, 10V 4.6V @ 60μA 1820pF @ 75V 23.1nC @ 10V 20V 150V 56A Tc 224A 43 mJ 8V 10V ±20V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free Tin 16A No 8 AVALANCHE RATED 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 6.5mOhm Surface Mount -55°C~150°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 Single 2.5W 20 ns 2V 2.5W Ta 72 ns 16A SWITCHING 50 ns SILICON N-Channel 6.5m Ω @ 16A, 10V 2V @ 250μA 3640pF @ 15V 62nC @ 5V 25ns 52 ns 12V 20V 20V 2 V 16A Ta 250 mJ 2.8V 10V ±12V
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant Lead Free 30A No 5 DirectFET™ Isometric MT No SVHC 508μm 5.0546mm 2.2MOhm Surface Mount -40°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM 260 30 R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 89W 21 ns 1.64V 2.8W Ta 89W Tc 170mA SWITCHING 27 ns SILICON N-Channel 2.2m Ω @ 30A, 10V 2.35V @ 250μA 5640pF @ 15V 65nC @ 4.5V 71ns 8.1 ns 20V 30V 29A 30A Ta 170A Tc 240A 4.5V 10V ±20V
IRFB41N15D IRFB41N15D Infineon Technologies 0.0000
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0.00000000 Tube 2003 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 200W Tc SWITCHING 0.045Ohm 150V SILICON N-Channel 45m Ω @ 25A, 10V 5.5V @ 250μA 2520pF @ 25V 110nC @ 10V 41A 41A Tc 150V 164A 470 mJ 10V ±30V
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0.00000000 download 6 Weeks Tube 2008 CoolMOS™ Last Time Buy 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 89W Tc SWITCHING 1Ohm 900V SILICON N-Channel 1 Ω @ 3.3A, 10V 3.5V @ 370μA 850pF @ 100V 34nC @ 10V 5.7A 5.7A Tc 900V 12A 97 mJ 10V ±20V
BSO4420T BSO4420T Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2002 OptiMOS™ Obsolete 1 (Unlimited) RoHS Compliant Lead Free 13A 8 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) 8-SO 2.5W Ta 13A N-Channel 7.8mOhm @ 13A, 10V 2V @ 80μA 2213pF @ 25V 33.7nC @ 5V 44ns 13A Ta 30V 2.213nF 4.5V 10V ±20V 7.8 mΩ
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0.00000000 download Surface Mount Tape & Reel (TR) 2001 SIPMOS® Discontinued 1 (Unlimited) Non-RoHS Compliant Lead Free 200mA TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ 240V MOSFET (Metal Oxide) PG-SOT223-4 1.8W Ta 350mA N-Channel 6Ohm @ 350mA, 10V 1V @ 108μA 108pF @ 25V 5.7nC @ 5V 10ns Depletion Mode 350mA Ta 240V 108pF 0V 10V ±20V 6 Ω
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0.00000000 download Tape & Reel (TR) 2009 OptiMOS™ Obsolete 3 (168 Hours) 3 EAR99 RoHS Compliant 3-WDSON compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN BOTTOM NO LEAD 260 40 3 YES R-XBCC-N3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.8W Ta 78W Tc SWITCHING 0.0024Ohm 30V SILICON N-Channel 2.4m Ω @ 30A, 10V 2.2V @ 250μA 4900pF @ 15V 72nC @ 10V 27A 27A Ta 145A Tc 30V 400A 220 mJ 4.5V 10V ±20V
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0.00000000 download Surface Mount Cut Tape (CT) 2009 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 5mm RoHS Compliant Lead Free No 8 8-PowerVDFN No SVHC 810μm 6mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 3.6W 1 Single 100W 18 ns 1.8V 2.1mOhm PQFN (5x6) Single Die 29 ns 100A 22 ns N-Channel 2.1mOhm @ 50A, 10V 2.35V @ 100μA 4400pF @ 15V 76nC @ 10V 51ns 18 ns 20V 30V 1.8 V 32A Ta 100A Tc 30V 4.4nF 2.1 mΩ
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0.00000000 download 26 Weeks Tape & Reel (TR) OptiMOS™ Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant 8-PowerTDFN Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT YES R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN 3W Ta 43W Tc SWITCHING 0.0097Ohm 60V SILICON N-Channel 9.7m Ω @ 40A, 10V 3.3V @ 14μA 1075pF @ 30V 15nC @ 10V 12A 13A Ta 48A Tc 60V 184A 13 mJ 6V 10V ±20V
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0.00000000 Tape & Reel (TR) 2004 FETKY™ Obsolete 1 (Unlimited) Non-RoHS Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 8-SO 2W Ta P-Channel 62mOhm @ 2.9A, 4.5V 700mV @ 250μA 780pF @ 15V 29nC @ 4.5V Schottky Diode (Isolated) 5.3A Ta 20V 2.7V 4.5V ±12V
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0.00000000 download Tape & Reel (TR) 2006 OptiMOS™ Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc 0.0052Ohm 55V SILICON N-Channel 5.2m Ω @ 80A, 10V 4V @ 230μA 4400pF @ 25V 155nC @ 10V 80A 80A Tc 55V 320A 700 mJ 10V ±20V
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0.00000000 16 Weeks Active 2 (1 Year) ROHS3 Compliant
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0.00000000 download 18 Weeks CoolMOS™ CFD7 Active TO-220-3 Through Hole MOSFET (Metal Oxide) 600V
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0.00000000 download Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 300W 26 ns 2V 300W Tc 130A SWITCHING 0.007Ohm 68 ns SILICON N-Channel 7m Ω @ 75A, 10V 4V @ 250μA 7670pF @ 50V 250nC @ 10V 110ns 78 ns 20V 100V 2 V 75A 75A Tc 550A 980 mJ 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2013 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 5.9944mm RoHS Compliant No 8 8-PowerVDFN No SVHC 838.2μm 5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 Single 3.6W 11 ns 4.2mOhm 8-PQFN (5x6) 3.6W Ta 46W Tc 29 ns 23A 8.8 ns N-Channel 4.2mOhm @ 49A, 10V 2.35V @ 50μA 2190pF @ 15V 41nC @ 10V 31ns 6.1 ns 20V 30V 1.8 V 23A Ta 82A Tc 30V 2.19nF 4.5V 10V ±20V 4.2 mΩ
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0.00000000 download Through Hole Tube 2009 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.7056mm RoHS Compliant Lead Free No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 8.4MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 110W 13 ns 4V 110W Tc 39 ns 56A SWITCHING 55 ns SILICON N-Channel 8.4m Ω @ 47A, 10V 4V @ 100μA 2290pF @ 50V 69nC @ 10V 35ns 46 ns 20V 60V 79A 56A Tc 88 mJ 10V ±20V
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0.00000000 download Tube 2007 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED TO-220-3 compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NO R-PSFM-T3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-220AB 300W Tc SWITCHING 0.005Ohm 60V SILICON N-Channel 5m Ω @ 100A, 10V 4V @ 270μA 6100pF @ 30V 167nC @ 10V 100A 100A Tc 60V 400A 810 mJ 10V ±20V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 92W 14 ns 92W Tc 57A SWITCHING 0.012Ohm 35 ns SILICON N-Channel 12m Ω @ 34A, 10V 4V @ 250μA 1690pF @ 25V 65nC @ 10V 62ns 38 ns 20V 60V 57A Tc 10V ±20V
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