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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
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IPZA60R099P7XKSA1 IPZA60R099P7XKSA1 Infineon Technologies 0.0000
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0.00000000 download 14 Weeks Surface Mount Tube 2005 HEXFET®, StrongIRFET™ Discontinued 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 7 TO-263-7, D2Pak (6 Leads + Tab) 4.83mm 9.65mm Surface Mount 1.59999g -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 375W 28 ns 375W Tc 240A 161 ns N-Channel 0.75m Ω @ 100A, 10V 3.9V @ 250μA 13975pF @ 25V 460nC @ 10V 79ns 93 ns 20V 240A Tc 40V 6V 10V ±20V
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 6 ROHS3 Compliant Contains Lead TO-263-7, D2Pak (6 Leads + Tab) not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G6 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40V 188W Tc 180A 0.0012Ohm SILICON N-Channel 1.2m Ω @ 100A, 10V 2.2V @ 140μA 19100pF @ 25V 245nC @ 10V 180A Tc 720A 550 mJ 4.5V 10V +20V, -16V
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0.00000000 download 14 Weeks Through Hole Tube 2003 HEXFET® Not For New Designs 1 (Unlimited) 175°C -55°C 10.5156mm ROHS3 Compliant Lead Free Tin -27A No 3 TO-220-3 No SVHC 15.24mm 4.69mm Through Hole -55°C~175°C TJ -150V MOSFET (Metal Oxide) 1 Single 250W 21 ns -5V 150mOhm TO-220AB 250W Tc -27A 35 ns P-Channel 150mOhm @ 16A, 10V 5V @ 250μA 2210pF @ 25V 110nC @ 10V 70ns 30 ns 20V -150V -150V -5 V 27A Tc 150V 2.21nF 10V ±20V 150 mΩ
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET® Active 1 (Unlimited) 3 EAR99 3.04mm ROHS3 Compliant Lead Free 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.12mm 1.4mm 80MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Micro3 e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Not Qualified 1 Single 1.3W 3.3 ns 800mV 1.3W Ta 13 ns 3.4A 150°C SWITCHING 12 ns SILICON N-Channel 63m Ω @ 3.4A, 4.5V 1.1V @ 10μA 270pF @ 24V 2.9nC @ 4.5V 4ns 4.9 ns 12V 30V 800 mV 3.4A Ta 2.5V 4.5V ±12V
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0.00000000 Tube 2006 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 330W Tc SWITCHING 0.0041Ohm 75V SILICON N-Channel 4.5m Ω @ 75A, 10V 4V @ 250μA 7600pF @ 50V 260nC @ 10V 120A 180A Tc 75V 670A 170 mJ 10V ±20V
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0.00000000 Active 1 (Unlimited) ROHS3 Compliant
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0.00000000 download Through Hole Tube 2005 SIPMOS® yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 15 ns 40W Tc 5.5A 0.6Ohm 200V 100 ns SILICON N-Channel 600m Ω @ 3.5A, 5V 2V @ 1mA 840pF @ 25V 60ns 40 ns 20V 5.5A Tc 200V 22A 120 mJ 5V ±20V
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0.00000000 download Surface Mount Tube 2004 FETKY™ Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant No 8 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 1.25W 5.7 ns 135mOhm Micro8™ 1.3W Ta 2.4A 15 ns N-Channel 135mOhm @ 1.7A, 4.5V 700mV @ 250μA 260pF @ 15V 8nC @ 4.5V 24ns 16 ns 12V 20V Schottky Diode (Isolated) 2.4A Ta 20V 260pF 2.7V 4.5V ±12V 135 mΩ
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