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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
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IPD900P06NMATMA1 IPD900P06NMATMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks OptiMOS™ Active TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 63W Tc P-Channel 90m Ω @ 16.4A, 10V 4V @ 710μA 1100pF @ 30V 27nC @ 10V 16.4A Tc 60V 10V ±20V
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0.00000000 Tube 1998 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 3.8W Ta 48W Tc P-Channel 480m Ω @ 4A, 10V 4V @ 250μA 350pF @ 25V 27nC @ 10V 6.8A Tc 100V 10V ±20V
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0.00000000 download 10 Weeks Through Hole Tube 2008 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 380W 1.9mOhm TO-262 380W Tc 195A N-Channel 2.4mOhm @ 165A, 10V 2.5V @ 250μA 11210pF @ 50V 140nC @ 4.5V 60V 195A Tc 60V 11.21nF 4.5V 10V ±16V 2.4 mΩ
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0.00000000 download Surface Mount Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 9.4mOhm Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 170W 18 ns 4V 170W Tc 75A SWITCHING 40 ns SILICON N-Channel 9.4m Ω @ 53A, 10V 4V @ 250μA 3270pF @ 25V 110nC @ 10V 79ns 45 ns 20V 75V 75V 4 V 89A 75A Tc 10V ±20V
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0.00000000 download 16 Weeks Surface Mount, Through Hole Tube 2010 HEXFET® Active 1 (Unlimited) 175°C -55°C ROHS3 Compliant No 3 TO-262-3 Short Leads, I2Pak Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 32 ns 1.2mOhm TO-262 375W Tc 195A 160 ns N-Channel 1.2mOhm @ 100A, 10V 3.9V @ 250μA 14240pF @ 25V 450nC @ 10V 105ns 100 ns 20V 40V 195A Tc 40V 14.24nF 10V ±20V 1.2 mΩ
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0.00000000 download 13 Weeks OptiMOS™5 Active TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 36W Tc N-Channel 8.3m Ω @ 25A, 10V 3.8V @ 49μA 2700pF @ 50V 40nC @ 10V 50A Tc 100V 6V 10V ±20V
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C 6.7056mm RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) Single 110W 12 ns 39mOhm D-Pak 3W Ta 110W Tc 31A 40 ns N-Channel 39mOhm @ 18A, 10V 4V @ 250μA 1690pF @ 25V 56nC @ 10V 27ns 13 ns 20V 100V 31A Tc 100V 1.69nF 10V ±20V 39 mΩ
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0.00000000 download 16 Weeks Tape & Reel (TR) 2016 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 8-PowerTDFN not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED YES R-PDSO-F3 1 SINGLE WITH BUILT-IN DIODE DRAIN 100W Tc 0.0023Ohm 40V SILICON N-Channel 1.9m Ω @ 50A, 10V 3.4V @ 50μA 3770pF @ 25V 65nC @ 10V 100A 100A Tc 40V 400A 130 mJ 7V 10V ±20V
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0.00000000 download Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 38W Tc SWITCHING 0.175Ohm 55V SILICON P-Channel 175m Ω @ 6.6A, 10V 4V @ 250μA 350pF @ 25V 19nC @ 10V 11A 11A Tc 55V 44A 62 mJ 10V ±20V
IRLIZ44NPBF IRLIZ44NPBF Infineon Technologies 0.0000
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0.00000000 download 14 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Contains Lead, Lead Free 30A 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE TO-220-3 Full Pack No SVHC 9.8mm 4.826mm 25mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB ISOLATED Single 38W 11 ns 2V 45W Tc 120 ns 30A SWITCHING 2kV 26 ns SILICON N-Channel 22m Ω @ 17A, 10V 2V @ 250μA 1700pF @ 25V 48nC @ 5V 84ns 15 ns 16V 55V 55V 2 V 28A 30A Tc 4V 10V ±16V
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0.00000000 download Tube 1997 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) TO-220AB 68W Tc N-Channel 26mOhm @ 20A, 10V 1V @ 250μA 870pF @ 25V 26nC @ 4.5V 38A Tc 30V 4.5V 10V ±16V
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0.00000000 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE 53W Tc SWITCHING 0.28Ohm 600V SILICON N-Channel 280m Ω @ 3.8A, 10V 4V @ 190μA 761pF @ 400V 18nC @ 10V 12A Tc 600V 36A 38 mJ 10V ±20V
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0.00000000 download 18 Weeks Tape & Reel (TR) CoolMOS™ CFD2 Active 1 (Unlimited) ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 83.3W Tc N-Channel 420m Ω @ 3.4A, 10V 4.5V @ 300μA 870pF @ 100V 31.5nC @ 10V 8.7A Tc 650V 10V ±20V
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0.00000000 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Contains Lead, Lead Free Tin 20A No 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-220-3 Full Pack No SVHC 9.8mm 4.826mm 46mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB ISOLATED Single 31W 8.9 ns 2V 37W Tc 22A SWITCHING 2kV 29 ns SILICON N-Channel 35m Ω @ 12A, 10V 2V @ 250μA 880pF @ 25V 25nC @ 5V 10ns 21 ns 16V 55V 55V 2 V 22A Tc 4V 10V ±16V
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0.00000000 download Tube 2006 SIPMOS® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED TO-220-3 compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 81.1W Ta 0.13Ohm 60V SILICON P-Channel 130m Ω @ 13.2A, 10V 4V @ 1mA 860pF @ 25V 28nC @ 10V 18.6A 18.7A Ta 60V 74.4A 150 mJ 10V ±20V
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0.00000000 Tape & Reel (TR) 2013 Obsolete 1 (Unlimited) DirectFET™ Isometric L6 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3.3W Ta 94W Tc N-Channel 1.6m Ω @ 109A, 10V 4V @ 250μA 7471pF @ 25V 194nC @ 10V 35A Ta 184A Tc 40V 10V ±20V
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0.00000000 download Through Hole Tube 2005 SIPMOS® yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 15 ns 40W Tc 5.5A 0.6Ohm 200V 100 ns SILICON N-Channel 600m Ω @ 3.5A, 5V 2V @ 1mA 840pF @ 25V 60ns 40 ns 20V 5.5A Tc 200V 22A 120 mJ 5V ±20V
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0.00000000 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 SIPMOS® yes Active 1 (Unlimited) 3 SMD/SMT EAR99 ROHS3 Compliant Lead Free Tin No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 3.05mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 DUAL GULL WING 3 1 1 SINGLE WITH BUILT-IN DIODE Halogen Free 360mW -1.4V 250V 360mW Ta 40mA SILICON N-Channel 14 Ω @ 100μA, 10V 1V @ 56μA 76pF @ 25V 3.5nC @ 5V 5.4ns 20V 250V Depletion Mode -1.4 V 100mA Ta 0V 10V ±20V
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0.00000000 Not For New Designs 1 (Unlimited) ROHS3 Compliant
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