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BSC050N04LSGATMA1
BSC050N04LSGATMA1
376-BSC050N04LSGATMA1
8-PowerTDFN
BSC050N04LSGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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BSC050N04LSGATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 35 mJ.A device's maximum input capacitance is 3700pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 85A.IDM is the?maximum rated peak drain current?for a power MOSFET, and its maximal pulsed drain current is 340A.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to 40V, it supports dual voltages up to the maximum.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
BSC050N04LSGATMA1 Features
the avalanche energy rating (Eas) is 35 mJ
a continuous drain current (ID) of 85A
based on its rated peak drain current 340A.
BSC050N04LSGATMA1 Applications
There are a lot of Infineon Technologies BSC050N04LSGATMA1 applications of single MOSFETs transistors.
- Solar Inverter
- LCD/LED TV
- Lighting
- DC/DC converters
- Consumer Appliances
- Synchronous Rectification
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Micro Solar Inverter
- DC-to-DC converters
- Synchronous Rectification for ATX 1 Server I Telecom PSU
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BSC050N04LSGATMA1
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