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IRF3710ZSPBF
IRF3710ZSPBF
376-IRF3710ZSPBF
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3710ZSPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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Product Details
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IRF3710ZSPBF Description
The incredibly low on-resistance per silicon area of this HEXFET? Power MOSFET is achieved by using the most recent manufacturing processes. A 175°C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to make this design a very effective and dependable tool for use in a wide range of applications.
IRF3710ZSPBF Features
Contemporary Process Technology
Very Little On-Resistance
Rating for dynamic dv/dt
Operating Temperature: 175 °C
Speedy Switching
Recurrent Avalanche Permitted to Tjmax
IRF3710ZSPBF Applications
Switching applications
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IRF3710ZSPBF
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