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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type Capacitance Current HTS Code Number of Functions Type JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Supply Voltage Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Temperature Grade Surface Mount JESD-30 Code Operating Temperature (Max) Operating Temperature (Min) Subcategory Qualification Status Max Power Dissipation Power - Max Reference Standard Voltage Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases JEDEC-95 Code Polarity Forward Current Forward Voltage Case Connection Gain Bandwidth Product Polarity/Channel Type Leakage Current (Max) Non-Repetitive Pk On-state Cur Critical Rate of Rise of Off-State Voltage-Min Holding Current-Max Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Threshold Voltage Drain to Source Resistance Max Breakdown Voltage Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Diode Configuration Max Forward Surge Current (Ifsm) Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Reverse Voltage Recovery Time Frequency Band Max Collector Current Collector Emitter Breakdown Voltage Hold Current Collector Emitter Voltage (VCEO) RMS Current (Irms) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Avalanche Energy Rating (Eas) Transistor Type Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Turn Off Time-Max (toff) Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Turn Off Time-Nom (toff) IGBT Type Gate-Emitter Voltage-Max VCEsat-Max Voltage - Collector Emitter Breakdown (Max) Continuous Collector Current Gate-Emitter Thr Voltage-Max Fall Time-Max (tf) Test Condition Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min Voltage - Isolation Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - Off State (Max) Current - On State (It (AV)) (Max) Repetitive Peak Off-state Leakage Current-Max Triac Type Critical Rate of Rise of Commutation Voltage-Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic
STP24N60M6 STP24N60M6 STMicroelectronics 0.0000
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0.00000000 download Through Hole Tube TURBOSWITCH™ Obsolete 1 (Unlimited) 2 EAR99 150°C -65°C ROHS3 Compliant Lead Free 12A 2 FREE WHEELING DIODE, LOW POWER LOSS TO-220-2 not_compliant Through Hole 1.2kV 8541.10.00.80 e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED STTA121 3 Rectifier Diodes Not Qualified CECC SILICON 1 Standard HIGH VOLTAGE ULTRA FAST SOFT RECOVERY 1 12A 2V CATHODE 100A Single 32.1W Fast Recovery =< 500ns, > 200mA (Io) 100μA @ 1200V 2.2V @ 12A 150°C Max 1.2kV 12A 100μA 1.2kV 100A 1200V 100 ns 1.2kV 100 ns
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0.00000000 download 31 Weeks ACTIVE (Last Updated: 7 months ago) Chassis Mount, Panel, Screw Tube Active 1 (Unlimited) 4 EAR99 150°C -55°C 31.7mm ROHS3 Compliant Lead Free 240A No 4 ISOTOP No SVHC 9.1mm 24.8mm Chassis Mount 600V NICKEL UPPER UNSPECIFIED STTH2 4 Other Diodes SILICON 2 Standard HIGH VOLTAGE ULTRA FAST RECOVERY 1 120A 1.55V ISOLATED 800A Dual Fast Recovery =< 500ns, > 200mA (Io) 100μA @ 600V 1.55V @ 100A 150°C Max 600V 120A 100μA 600V 800A 2 Independent 120 ns 600V 120 ns
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0.00000000 download NRND (Last Updated: 7 months ago) Through Hole Tube Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Tin TO-220-3 Full Pack not_compliant Through Hole 150°C TJ e3 NOT SPECIFIED NOT SPECIFIED BUL1203 3 R-PSFM-T3 Other Transistors Not Qualified 36W 1 TO-220AB ISOLATED NPN Single 36W 5A 550V 550V SWITCHING SILICON NPN 100μA 1.2kV 9V 10 9 @ 2A 5V 1.5V @ 1A, 3A
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0.00000000 download 15 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Tube Active 1 (Unlimited) 3 EAR99 175°C -65°C 10.4mm ROHS3 Compliant Lead Free 16A No 3 FREE WHEELING DIODE, LOW POWER LOSS TO-220-3 Full Pack No SVHC 15.75mm 4.6mm Through Hole 200V 8541.10.00.80 e3 Matte Tin (Sn) - annealed SINGLE STTH1602 3 Rectifier Diodes SILICON 2 Standard EFFICIENCY 1 TO-220AB 10A 1.25V 80A Common Cathode Fast Recovery =< 500ns, > 200mA (Io) 6μA @ 200V 1.1V @ 8A 175°C Max 200V 10A 6μA 200V 80A 1 Pair Common Cathode 80A 26 ns 200V 26 ns
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0.00000000 download 32 Weeks Through Hole Tube Active 1 (Unlimited) EAR99 ROHS3 Compliant Tin 3 TO-3PFM, SC-93-3 Through Hole 6.961991g -55°C~175°C TJ Standard NOT SPECIFIED NOT SPECIFIED STGFW40 62.5W 62.5W Single 41 ns 80A 600V 600V 1.8V 2.3V @ 15V, 40A Trench Field Stop 400V, 40A, 10 Ω, 15V 226nC 160A 52ns/208ns 456μJ (on), 411μJ (off)
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0.00000000 download 17 Weeks MDmesh™ DM2 Active RoHS Compliant TO-220-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 170W Tc N-Channel 190m Ω @ 10A, 10V 5V @ 250μA 1480pF @ 100V 35.5nC @ 10V 20A Tc 650V 10V ±25V
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0.00000000 download 16 Weeks MDmesh™ M6 Active RoHS Compliant TO-247-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 250W Tc N-Channel 69m Ω @ 19.5A, 10V 4.75V @ 250μA 2578pF @ 100V 57nC @ 10V 39A Tc 600V 10V ±25V
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ESM3030DV ESM3030DV STMicroelectronics 0.0000
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STD127DT4 STD127DT4 STMicroelectronics 0.0000
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0.00000000 download 16 Weeks MDmesh™ M6 Active RoHS Compliant TO-247-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 446W Tc N-Channel 36m Ω @ 36A, 10V 4.75V @ 250μA 4850pF @ 100V 106nC @ 10V 72A Tc 600V 10V ±25V
BUX98A BUX98A STMicroelectronics 0.0000
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0.00000000 download Chassis Mount, Through Hole Tube yes Obsolete 1 (Unlimited) 2 EAR99 39.5mm ROHS3 Compliant Lead Free Tin 30A 2 TO-3 No SVHC not_compliant 8.7mm 26.2mm Chassis Mount 200°C TJ 450V e3 BOTTOM PIN/PEG NOT SPECIFIED NOT SPECIFIED BUX98 2 Other Transistors Not Qualified 250W 1 COLLECTOR NPN Single 250W 30A 450V 450V SWITCHING SILICON NPN 3800ns 2mA 5V 5 V 1kV 7V 5V @ 5A, 24A
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0.00000000 download 8 Weeks ACTIVE (Last Updated: 6 months ago) Surface Mount Tape & Reel (TR) PowerMESH™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 14A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ 600V Standard e3 Tin (Sn) DUAL GULL WING 260 30 STGD14 3 R-PDSO-G2 Insulated Gate BIP Transistors 80W 80W 1 N-CHANNEL Single 22.5 ns 600V 25A 600V 600V 14A POWER CONTROL 116 ns SILICON 600V 31.5 ns 2.5V @ 15V, 7A 340 ns 20V 6.5V 390V, 7A, 10 Ω, 15V 34.4nC 22.5ns/116ns 82μJ (on), 155μJ (off)
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