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ESM3030DV
ESM3030DV
761-ESM3030DV
SOT-227-4, miniBLOC
ESM3030DV datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at HK JDW
In Stock : 999
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Product Details
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ESM3030DV Overview
This device has a DC current gain of 300 @ 85A 5V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 1.8V, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 2.4A, 85A.An emitter's base voltage can be kept at 7V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100A.During maximum operation, collector current can be as low as 100A volts.
ESM3030DV Features
the DC current gain for this device is 300 @ 85A 5V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.5V @ 2.4A, 85A
the emitter base voltage is kept at 7V
the current rating of this device is 100A
ESM3030DV Applications
There are a lot of STMicroelectronics ESM3030DV applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
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ESM3030DV
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