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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRFZ14 IRFZ14 Vishay Siliconix 0.4740
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0.00000000 download Through Hole Tube Obsolete 1 (Unlimited) 175°C -55°C 10.41mm Non-RoHS Compliant Contains Lead 10A 3 TO-220-3 9.01mm 4.7mm Through Hole 6.000006g -55°C~175°C TJ 60V MOSFET (Metal Oxide) 1 Single 43W 10 ns 200mOhm TO-220AB 43W Tc 10A 13 ns N-Channel 200mOhm @ 6A, 10V 4V @ 250μA 300pF @ 25V 11nC @ 10V 50ns 19 ns 20V 60V 10A Tc 60V 300pF 10V ±20V 200 mΩ
MVSF2N02ELT1G MVSF2N02ELT1G ON Semiconductor 0.0000
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0.00000000 download 2 Weeks ACTIVE, NOT REC (Last Updated: 2 days ago) Tape & Reel (TR) 2014 yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-236-3, SC-59, SOT-23-3 Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES FET General Purpose Power AEC-Q101 1 Single 6 ns 1.25W Ta 2.8A SWITCHING 0.085Ohm 20V 28 ns SILICON N-Channel 85m Ω @ 3.6A, 4.5V 1V @ 250μA 150pF @ 5V 3.5nC @ 4V 95ns 125 ns 8V 2.8A Ta 20V 5A 2.5V 4.5V ±8V
IPAW60R600P7SXKSA1 IPAW60R600P7SXKSA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Tube 2014 CoolMOS™ P7 Active Not Applicable 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 21W Tc SWITCHING 0.6Ohm 600V SILICON N-Channel 600m Ω @ 1.7A, 10V 4V @ 80μA 363pF @ 400V 9nC @ 10V 6A Tc 600V 16A 17 mJ 10V ±20V
IRL3714STRLPBF IRL3714STRLPBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C RoHS Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) Single 47W 20mOhm D2PAK 47W Tc 36A 10 ns N-Channel 20mOhm @ 18A, 10V 3V @ 250μA 670pF @ 10V 9.7nC @ 4.5V 78ns 4.5 ns 20V 20V 36A Tc 20V 670pF 4.5V 10V ±20V 20 mΩ
IXTA50N20P IXTA50N20P IXYS 0.0000
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0.00000000 download 28 Weeks Surface Mount Tube 2008 PolarHT™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 360W 360W Tc 50A SWITCHING 0.06Ohm 70 ns SILICON N-Channel 60m Ω @ 50A, 10V 5V @ 250μA 2720pF @ 25V 70nC @ 10V 35ns 30 ns 20V 200V 50A Tc 120A 1000 mJ 10V ±20V
MTB50P03HDLT4G MTB50P03HDLT4G ON Semiconductor 0.0000
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0.00000000 download 17 Weeks ACTIVE, NOT REC (Last Updated: 3 days ago) Tape & Reel (TR) 2006 yes Not For New Designs 1 (Unlimited) 2 EAR99 10.29mm ROHS3 Compliant Lead Free Tin -50A No 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 25MOhm Surface Mount -55°C~150°C TJ -30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 40 3 YES R-PSSO-G2 Other Transistors 1 DRAIN Single 125W 22 ns 1.5V 2.5W Ta 125W Tc 50A SWITCHING 90 ns SILICON P-Channel 25m Ω @ 25A, 5V 2V @ 250μA 4900pF @ 25V 100nC @ 5V 340ns 218 ns 15V -30V 50A Tc 30V 5V ±15V
IXTV96N25T IXTV96N25T IXYS 0.0000
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0.00000000 download Through Hole Tube 2007 TrenchHV™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 AVALANCHE RATED TO-220-3, Short Tab Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 DRAIN Single 625W 625W Tc 96A SWITCHING 0.029Ohm 59 ns SILICON N-Channel 29m Ω @ 500mA, 10V 5V @ 1mA 6100pF @ 25V 114nC @ 10V 22ns 28 ns 30V 250V 96A Tc 250A 2000 mJ 10V ±30V
DMN2024U-13 DMN2024U-13 Diodes Incorporated 0.0000
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0.00000000 22 Weeks Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) 800mW N-Channel 25m Ω @ 6.5A, 4.5V 900mV @ 250μA 647pF @ 10V 7.1nC @ 4.5V 6.8A Ta 20V 1.8V 4.5V ±10V
IRFS7534TRL7PP IRFS7534TRL7PP Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 6 EAR99 10.67mm ROHS3 Compliant Lead Free 7 TO-263-7, D2Pak (6 Leads + Tab) No SVHC 4.83mm 9.65mm Surface Mount 1.59999g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G6 1 FET General Purpose Power 1 TO-263CB DRAIN Single 140 ns 3.7V 290W Tc 240A SWITCHING 60V 195 ns SILICON N-Channel 1.95m Ω @ 100A, 10V 3.7V @ 250μA 9990pF @ 25V 300nC @ 10V 120ns 86 ns 20V 240A Tc 60V 6V 10V ±20V
NTTFS4C50NTWG NTTFS4C50NTWG ON Semiconductor 0.0000
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0.00000000 18 Weeks Surface Mount Tape & Reel (TR) 2017 Active 1 (Unlimited) ROHS3 Compliant 8 8-PowerWDFN Surface Mount
IRLD014PBF IRLD014PBF Vishay Siliconix 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2014 Active 1 (Unlimited) 175°C -55°C 6.2738mm ROHS3 Compliant Lead Free 1.7A No 4 4-DIP (0.300, 7.62mm) Unknown 3.3782mm 5.0038mm 200mOhm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) 1 Single 1.3W 9.3 ns 2V 200mOhm 4-DIP, Hexdip, HVMDIP 1.3W Ta 130 ns 1.7A 17 ns N-Channel 200mOhm @ 1A, 5V 2V @ 250μA 400pF @ 25V 8.4nC @ 5V 110ns 110 ns 10V 60V 1.7A Ta 60V 400pF 4V 5V ±10V 200 mΩ
APT66F60B2 APT66F60B2 Microsemi Corporation 0.0000
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0.00000000 download 22 Weeks Through Hole Tube 1997 POWER MOS 8™ yes Active 1 (Unlimited) 3 21.46mm RoHS Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY TO-247-3 Variant 5.31mm 16.26mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE MATTE TIN SINGLE 3 1 SINGLE WITH BUILT-IN DIODE DRAIN 75 ns 1135W Tc 70A SWITCHING 600V 225 ns SILICON N-Channel 90m Ω @ 33A, 10V 5V @ 2.5mA 13190pF @ 25V 330nC @ 10V 85ns 70 ns 30V 66A 70A Tc 600V 245A 10V ±30V
FQB5N30TM FQB5N30TM ON Semiconductor 0.0000
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0.00000000 download Tape & Reel (TR) 2000 QFET® Obsolete 1 (Unlimited) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) D2PAK (TO-263AB) 3.13W Ta 70W Tc N-Channel 900mOhm @ 2.7A, 10V 5V @ 250μA 430pF @ 25V 13nC @ 10V 5.4A Tc 300V 10V ±30V
IPI034NE7N3 G IPI034NE7N3 G Infineon Technologies 0.0000
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0.00000000 Tube 2011 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 214W Tc SWITCHING 0.0034Ohm 75V SILICON N-Channel 3.4m Ω @ 100A, 10V 3.8V @ 155μA 8130pF @ 37.5V 117nC @ 10V 100A 100A Tc 75V 400A 640 mJ
VN1206L-G VN1206L-G Microchip Technology 0.0000
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0.00000000 download 6 Weeks Through Hole Bulk 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant 3 LOW THRESHOLD TO-226-3, TO-92-3 (TO-226AA) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM NOT APPLICABLE NOT APPLICABLE 1 Not Qualified 1 Single 1W 8 ns 1W Tc 230mA SWITCHING 6Ohm 18 ns SILICON N-Channel 6 Ω @ 500mA, 10V 2V @ 1mA 125pF @ 25V 8ns 12 ns 30V 120V 230mA Tj 20 pF 2.5V 10V ±30V
HUF76609D3S HUF76609D3S Rochester Electronics, LLC 0.0000
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0.00000000 download Tube UltraFET™ yes Obsolete 1 (Unlimited) 2 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING NOT APPLICABLE NOT APPLICABLE YES R-PSSO-G2 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 49W Tc SWITCHING 0.168Ohm 100V SILICON N-Channel 160m Ω @ 10A, 10V 3V @ 250μA 425pF @ 25V 16nC @ 10V 10A 10A Tc 100V 4.5V 10V ±16V
IPL60R255P6AUMA1 IPL60R255P6AUMA1 Rochester Electronics, LLC 0.0000
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0.00000000 download Tape & Reel (TR) CoolMOS™ P6 Obsolete 2A (4 Weeks) ROHS3 Compliant 4-PowerTSFN Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) PG-VSON-4 126W Tc N-Channel 255mOhm @ 6.4A, 10V 4.5V @ 530μA 1.45pF @ 100V 31nC @ 10V 15.9A Tc 600V 10V ±20V
IPW80R360P7XKSA1 IPW80R360P7XKSA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Tube 2018 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 84W Tc SWITCHING 0.36Ohm 800V SILICON N-Channel 360m Ω @ 5.6A, 10V 3.5V @ 280μA 930pF @ 500V 30nC @ 10V 13A Tc 800V 34A 34 mJ 10V ±20V
IRLR3714ZTRL IRLR3714ZTRL Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 2003 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) D-Pak 35W Tc N-Channel 15mOhm @ 15A, 10V 2.55V @ 250μA 560pF @ 10V 7.1nC @ 4.5V 37A Tc 20V 4.5V 10V ±20V
IRFR120NTRPBF IRFR120NTRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 1998 HEXFET® Active 1 (Unlimited) SMD/SMT 175°C -55°C 6.7056mm ROHS3 Compliant Lead Free Tin 9.1A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.52mm 6.22mm 210mOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) 1 1 Single 39W 4.5 ns 4V 210mOhm D-Pak 48W Tc 150 ns 9.4A 175°C 32 ns N-Channel 210mOhm @ 5.6A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 23ns 23 ns 20V 100V 100V 4 V 9.4A Tc 100V 330pF 10V ±20V 210 mΩ
NTD6414AN-1G NTD6414AN-1G Rochester Electronics, LLC 0.0000
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0.00000000 download Tube no Obsolete 1 (Unlimited) 3 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSIP-T3 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE DRAIN 100W Tc 0.037Ohm 100V SILICON N-Channel 37m Ω @ 32A, 10V 4V @ 250μA 1.45pF @ 25V 40nC @ 10V 32A 32A Tc 100V 117A 154 mJ 10V ±20V
DMP4025SFG-7 DMP4025SFG-7 Diodes Incorporated 0.5250
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) EAR99 3.35mm ROHS3 Compliant No 8 8-PowerVDFN No SVHC 800μm 3.35mm Surface Mount 72.007789mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) Other Transistors Single 6.9 ns 810mW Ta 7.2A 53.7 ns P-Channel 25m Ω @ 3A, 10V 1.8V @ 250μA 1643pF @ 20V 14nC @ 4.5V 14.7ns 30.9 ns 20V 4.65A Ta 40V 4.5V 10V ±20V
IPB027N10N5ATMA1 IPB027N10N5ATMA1 Infineon Technologies 0.0000
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0.00000000 download 13 Weeks Surface Mount Tape & Reel (TR) 2015 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Halogen Free Single 26 ns 100V 250W Tc 120A SWITCHING 0.0027Ohm 52 ns SILICON N-Channel 2.7m Ω @ 100A, 10V 3.8V @ 184μA 10300pF @ 50V 139nC @ 10V 15ns 17 ns 20V 100V 120A Tc 480A 6V 10V ±20V
SSM3K09FU,LF SSM3K09FU,LF Toshiba Semiconductor and Storage 0.0613
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0.00000000 12 Weeks Surface Mount Tape & Reel (TR) 2014 π-MOSVI Active 1 (Unlimited) 3 EAR99 RoHS Compliant SC-70, SOT-323 Surface Mount 150°C MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED R-PDSO-G3 1 SINGLE WITH BUILT-IN DIODE AND RESISTOR 150mW Ta 400mA SWITCHING 1.7Ohm 30V SILICON N-Channel 700m Ω @ 200MA, 10V 1.8V @ 100μA 20pF @ 5V 0.4A 400mA Ta 30V 3.3V 10V ±20V
MCH3477-TL-W MCH3477-TL-W ON Semiconductor 0.0000
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0.00000000 5 Weeks Surface Mount Tape & Reel (TR) 2016 yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free 3 3-SMD, Flat Lead Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e6 Tin/Bismuth (Sn/Bi) DUAL 1 SINGLE WITH BUILT-IN DIODE 7.5 ns 1W Ta 4.5A SWITCHING 20V 38 ns SILICON N-Channel 38m Ω @ 2A, 4.5V 1.3V @ 1mA 410pF @ 10V 5.1nC @ 4.5V 26ns 32 ns 12V 4.5A Ta 20V 1.8V 4.5V ±12V
IXFV110N10PS IXFV110N10PS IXYS 0.0000
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0.00000000 download Surface Mount Bulk 2006 PolarHT™ HiPerFET™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant 220 AVALANCHE RATED PLUS-220SMD No SVHC Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 Not Qualified 1 DRAIN Single 480W 5V 480W Tc 110A SWITCHING 0.015Ohm 65 ns SILICON N-Channel 15m Ω @ 500mA, 10V 5V @ 4mA 3550pF @ 25V 110nC @ 10V 25ns 25 ns 20V 100V 110A Tc 250A 1000 mJ 10V ±20V
RJL5014DPK-00#T0 RJL5014DPK-00#T0 Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2011 yes Active 1 (Unlimited) ROHS3 Compliant TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 4 150W Tc 19A N-Channel 400m Ω @ 9.5A, 10V 1700pF @ 25V 43nC @ 10V 19A Ta 500V 10V ±30V
IRFR3710ZTRLPBF IRFR3710ZTRLPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 140W Tc SWITCHING 0.018Ohm 100V SILICON N-Channel 18m Ω @ 33A, 10V 4V @ 250μA 2930pF @ 25V 100nC @ 10V 42A 42A Tc 100V 220A 150 mJ 10V ±20V
AUIRLU3114Z AUIRLU3114Z Infineon Technologies 0.0000
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0.00000000 download 26 Weeks Through Hole Tube 2015 Automotive, AEC-Q101, HEXFET® Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 R-PSIP-T3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 140W Tc 130A SWITCHING 0.0065Ohm 40V SILICON N-Channel 4.9m Ω @ 42A, 10V 2.5V @ 100μA 3810pF @ 25V 56nC @ 4.5V 42A 130A Tc 40V 500A 260 mJ 4.5V 10V ±16V
FCPF20N60TYDTU FCPF20N60TYDTU ON Semiconductor 0.0000
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0.00000000 download Tube SuperFET™ Obsolete 1 (Unlimited) TO-220-3 Full Pack, Formed Leads Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) TO-220F-3 (Y-Forming) 39W Tc N-Channel 190mOhm @ 10A, 10V 5V @ 250μA 3080pF @ 25V 98nC @ 10V 20A Tc 600V 10V ±30V
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