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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Capacitance HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Capacitance - Input
IRFZ44NSTRLPBF IRFZ44NSTRLPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2000 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free Tin 49A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 5.084mm 9.65mm 17.5mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 DRAIN Single 110W 12 ns 2V 3.8W Ta 94W Tc 95 ns 49A 175°C SWITCHING 44 ns SILICON N-Channel 17.5m Ω @ 25A, 10V 4V @ 250μA 1470pF @ 25V 63nC @ 10V 60ns 45 ns 20V 55V 55V 4 V 49A Tc 10V ±20V
TK65E10N1,S1X TK65E10N1,S1X Toshiba Semiconductor and Storage 0.9980
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0.00000000 12 Weeks Through Hole Tube 2014 U-MOSVIII-H Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 5.4nF 192W Tc 148A N-Channel 4.8m Ω @ 32.5A, 10V 4V @ 1mA 5400pF @ 50V 81nC @ 10V 148A Ta 100V 10V ±20V
FQD12N20LTF FQD12N20LTF ON Semiconductor 0.0000
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0.00000000 Bulk 2016 QFET® Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) D-Pak 2.5W Ta 55W Tc N-Channel 280mOhm @ 4.5A, 10V 2V @ 250μA 1080pF @ 25V 21nC @ 5V 9A Tc 200V 5V 10V ±20V
FQI12N60CTU FQI12N60CTU ON Semiconductor 0.0000
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0.00000000 download Tube 2007 QFET® Obsolete 1 (Unlimited) TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) I2PAK (TO-262) 3.13W Ta 225W Tc N-Channel 650mOhm @ 6A, 10V 4V @ 250μA 2290pF @ 25V 63nC @ 10V 12A Tc 600V 10V ±30V
FQD20N06LETM FQD20N06LETM Rochester Electronics 0.0000
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0.00000000 download Tape & Reel (TR) QFET® yes Obsolete 1 (Unlimited) 2 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 260 NOT SPECIFIED 3 YES R-PSSO-G2 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.5W Ta 38W Tc SWITCHING 0.075Ohm 60V SILICON N-Channel 60m Ω @ 8.6A, 10V 2.5V @ 250μA 665pF @ 25V 13nC @ 5V 17.2A 17.2A Tc 60V 68.8A 170 mJ 5V 10V ±20V
JANTXV2N6798 JANTXV2N6798 Microsemi Corporation 0.0000
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0.00000000 Through Hole Bulk 1997 Military, MIL-PRF-19500/557 no Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant 3 HIGH RELIABILITY TO-205AF Metal Can Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.21.00.95 e0 Tin/Lead (Sn/Pb) BOTTOM WIRE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Qualified MIL-19500 1 SINGLE WITH BUILT-IN DIODE DRAIN 800mW Ta 25W Tc 5.5A SWITCHING 0.42Ohm 200V SILICON N-Channel 420m Ω @ 5.5A, 10V 4V @ 250μA 42.07nC @ 10V 20V 5.5A Tc 200V 10V ±20V
SI4866BDY-T1-E3 SI4866BDY-T1-E3 Vishay Siliconix 0.0000
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0.00000000 download 15 Weeks Surface Mount Tape & Reel (TR) 2013 TrenchFET® yes Obsolete 1 (Unlimited) 8 EAR99 5mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) 1.75mm 4mm 5.3MOhm Surface Mount 186.993455mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 8 1 FET General Purpose Powers 1 Single 2.5W 13 ns 1V 4.45W Tc 16.1A 150°C SWITCHING 57 ns SILICON N-Channel 5.3m Ω @ 12A, 4.5V 1V @ 250μA 5020pF @ 6V 80nC @ 4.5V 12ns 9 ns 8V 12V 21.5A Tc 50A 20 mJ 1.8V 4.5V ±8V
IRL3103D2STRL IRL3103D2STRL Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) FETKY™ Obsolete 1 (Unlimited) Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount MOSFET (Metal Oxide) N-Channel 14m Ω @ 32A, 10V 2300pF @ 25V 44nC @ 4.5V 54A Tc 30V 4.5V 10V ±16V
IRF3710ZSTRLPBF IRF3710ZSTRLPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 59A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 5.084mm 9.65mm 18MOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 DRAIN Single 160W 17 ns 4V 50 ns 160W Tc 75 ns 59A 175°C SWITCHING 41 ns SILICON N-Channel 18m Ω @ 35A, 10V 4V @ 250μA 2900pF @ 25V 120nC @ 10V 77ns 56 ns 20V 100V 100V 4 V 59A Tc 240A 200 mJ 10V ±20V
IRFRC20TRLPBF IRFRC20TRLPBF Vishay Siliconix 0.0000
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0.00000000 download 8 Weeks Surface Mount Tape & Reel (TR) 2016 Active 1 (Unlimited) 150°C -55°C 6.73mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.39mm 6.22mm 4.4Ohm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) 1 1 Single 2.5W 10 ns 4.4Ohm D-Pak 2.5W Ta 42W Tc 2A 30 ns N-Channel 4.4Ohm @ 1.2A, 10V 4V @ 250μA 350pF @ 25V 18nC @ 10V 23ns 25 ns 20V 600V 2A Tc 600V 350pF 10V ±20V 4.4 Ω
SPI80N03S2L-06 SPI80N03S2L-06 Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2003 OptiMOS™ Discontinued 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 80A AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-262-3 Long Leads, I2Pak, TO-262AA unknown Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 150W Tc 80A SWITCHING 0.0095Ohm SILICON N-Channel 6.2m Ω @ 80A, 10V 2V @ 80μA 2530pF @ 25V 68nC @ 10V 135A 80A Tc 320A 240 mJ 4.5V 10V ±20V
SISC06DN-T1-GE3 SISC06DN-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Tape & Reel (TR) TrenchFET® Gen IV Active 1 (Unlimited) ROHS3 Compliant PowerPAK® 1212-8 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) PowerPAK® 1212-8 3.7W Ta 46.3W Tc N-Channel 2.7mOhm @ 15A, 10V 2.1V @ 250μA 2455pF @ 15V 58nC @ 10V 27.6A Ta 40A Tc 30V 4.5V 10V +20V, -16V
NTD60N02RT4 NTD60N02RT4 Rochester Electronics, LLC 0.0000
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0.00000000 download Tape & Reel (TR) yes Obsolete 1 (Unlimited) 2 Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 TIN LEAD SINGLE GULL WING 240 30 3 YES R-PSSO-G2 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.25W Ta 58W Tc SWITCHING 0.0105Ohm 25V SILICON N-Channel 10.5m Ω @ 20A, 10V 2V @ 250μA 1.33pF @ 20V 14nC @ 4.5V 32A 8.5A Ta 32A Tc 25V 60 mJ 4.5V 10V ±20V
IRFU214 IRFU214 Vishay Siliconix 29.6303
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0.00000000 download Through Hole Tube 2016 Obsolete 1 (Unlimited) 150°C -55°C Non-RoHS Compliant Contains Lead 2.2A 3 TO-251-3 Short Leads, IPak, TO-251AA Unknown 2Ohm Through Hole -55°C~150°C TJ 250V MOSFET (Metal Oxide) Single 25W 7 ns 2Ohm TO-251AA 2.5W Ta 25W Tc 2.2A 16 ns N-Channel 2Ohm @ 1.3A, 10V 4V @ 250μA 140pF @ 25V 8.2nC @ 10V 7.6ns 7 ns 20V 250V 4 V 2.2A Tc 250V 140pF 10V ±20V 2 Ω
IRFS3307TRLPBF IRFS3307TRLPBF Infineon Technologies 0.0000
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0.00000000 download 15 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.572mm 9.65mm 6.3MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 26 ns 200W Tc 120A SWITCHING 51 ns SILICON N-Channel 6.3m Ω @ 75A, 10V 4V @ 150μA 5150pF @ 50V 180nC @ 10V 120ns 63 ns 20V 75V 75A 120A Tc 270 mJ 10V ±20V
IRFSL4615PBF IRFSL4615PBF Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2008 HEXFET® Obsolete 1 (Unlimited) Through Hole 175°C -55°C 10.668mm RoHS Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm 34.5MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 144W 15 ns 3V 42mOhm TO-262 144W Tc 33A 25 ns N-Channel 42mOhm @ 21A, 10V 5V @ 100μA 1750pF @ 50V 40nC @ 10V 35ns 20 ns 20V 150V 150V 3 V 33A Tc 150V 1.75nF 10V ±20V 42 mΩ
IPP100N04S2L03AKSA1 IPP100N04S2L03AKSA1 Rochester Electronics, LLC 0.0000
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0.00000000 download Tube OptiMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) PG-TO220-3-1 300W Tc N-Channel 3.3mOhm @ 80A, 10V 2V @ 250μA 6pF @ 25V 230nC @ 10V 100A Tc 40V 4.5V 10V ±20V
IRFB7430PBF IRFB7430PBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2008 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 16.51mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 375W 32 ns 2.2V 375W Tc 52 ns 195A SWITCHING 160 ns SILICON N-Channel 1.3m Ω @ 100A, 10V 3.9V @ 250μA 14240pF @ 25V 460nC @ 10V 105ns 100 ns 20V 40V 195A Tc 760 mJ 6V 10V ±20V
DMT10H009LFG-13 DMT10H009LFG-13 Diodes Incorporated 0.0000
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0.00000000 download 24 Weeks Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant 8-PowerVDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) 2W Ta 30W Tc N-Channel 8.5m Ω @ 20A, 10V 2.5V @ 250μA 2361pF @ 50V 41nC @ 10V 13A Ta 50A Tc 100V 4.5V 10V ±20V
IXFJ40N30 IXFJ40N30 IXYS 0.0000
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0.00000000 download Through Hole Tube 2000 HiPerFET™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free AVALANCHE RATED TO-220-3, Short Tab 80MOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 4 R-PSIP-T3 FET General Purpose Power Not Qualified 1 TO-268AA DRAIN Single 300W 300W Tc 40A SWITCHING 75 ns SILICON N-Channel 80m Ω @ 20A, 10V 4V @ 4mA 4800pF @ 25V 200nC @ 10V 60ns 45 ns 20V 300V 40A Tc 160A 10V ±20V
NTD85N02R-001 NTD85N02R-001 ON Semiconductor 0.0000
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0.00000000 download Through Hole Tube 2007 Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant Contains Lead 85A 3 TO-251-3 Short Leads, IPak, TO-251AA not_compliant Through Hole -55°C~150°C TJ 24V MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) 240 30 3 FET General Purpose Power Not Qualified 1 DRAIN Single 2.4W 1.25W Ta 78.1W Tc 85A SWITCHING 0.0052Ohm 25 ns SILICON N-Channel 5.2m Ω @ 20A, 10V 2V @ 250μA 2050pF @ 20V 17.7nC @ 5V 77ns 12 ns 20V 24V 12A Ta 85A Tc 192A 85 mJ 4.5V 10V ±20V
1HN04CH-TL-W 1HN04CH-TL-W ON Semiconductor 0.0000
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0.00000000 download 7 Weeks ACTIVE (Last Updated: 20 hours ago) Surface Mount Tape & Reel (TR) 2011 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free Tin TO-236-3, SC-59, SOT-23-3 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e6 DUAL GULL WING R-PDSO-G3 1 FET General Purpose Power 600mW 1 SINGLE WITH BUILT-IN DIODE AND RESISTOR 10 ns 270mA 8Ohm 58 ns SILICON N-Channel 8 Ω @ 140mA, 10V 2.6V @ 100μA 15pF @ 20V 0.9nC @ 10V 7.4ns 39 ns 20V 0.27A 270mA Ta 100V 4V 10V ±20V
IRF3710PBF IRF3710PBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.54mm ROHS3 Compliant Lead Free 57A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 2.54mm 19.8mm 4.69mm 23MOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-220AB DRAIN Single 200W 12 ns 4V 200W Tc 220 ns 57A 175°C SWITCHING 45 ns SILICON N-Channel 23m Ω @ 28A, 10V 4V @ 250μA 3130pF @ 25V 130nC @ 10V 58ns 47 ns 20V 100V 100V 4 V 57A Tc 280 mJ 10V ±20V
IRFZ44ESTRL IRFZ44ESTRL Infineon Technologies 0.0000
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0.00000000 Surface Mount Tape & Reel (TR) 1997 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 48A AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 110W Tc 48A SWITCHING 0.023Ohm SILICON N-Channel 23m Ω @ 29A, 10V 4V @ 250μA 1360pF @ 25V 60nC @ 10V 60ns 48A Tc 192A 220 mJ 10V ±20V
IRF8306MTRPBF IRF8306MTRPBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2007 HEXFET® Obsolete 1 (Unlimited) EAR99 RoHS Compliant Lead Free No 7 DirectFET™ Isometric MX Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) FET General Purpose Power 1 Single 75W 16 ns 2.1W Ta 75W Tc 23A 19 ns N-Channel 2.5m Ω @ 23A, 10V 2.35V @ 100μA 4110pF @ 15V 38nC @ 4.5V 34ns 19 ns 20V 30V Schottky Diode (Body) 23A Ta 140A Tc 4.5V 10V ±20V
IRL3803STRR IRL3803STRR Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 2002 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 200W Tc SWITCHING 0.006Ohm 30V SILICON N-Channel 6m Ω @ 71A, 10V 1V @ 250μA 5000pF @ 25V 140nC @ 4.5V 140A 140A Tc 30V 470A 610 mJ 4.5V 10V ±16V
APT8052BLLG APT8052BLLG Microsemi Corporation 0.0000
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0.00000000 download IN PRODUCTION (Last Updated: 3 weeks ago) Through Hole Tube 1997 POWER MOS 7® Active 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free 15A No TO-247-3 Through Hole 800V MOSFET (Metal Oxide) 298W 1 298W 9 ns TO-247 [B] 15A 23 ns N-Channel 520mOhm @ 7.5A, 10V 5V @ 1mA 2035pF @ 25V 75nC @ 10V 6ns 7 ns 30V 15A Tc 800V 2.035nF 520 mΩ
MMBF2202PT1G MMBF2202PT1G ON Semiconductor 0.0000
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0.00000000 download LAST SHIPMENTS (Last Updated: 1 week ago) Surface Mount Tape & Reel (TR) 2006 yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free -300mA 3 SC-70, SOT-323 Surface Mount -55°C~150°C TJ -20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING 260 40 3 Other Transistors Not Qualified 1 Single 150mW -1.7V 150mW Ta 300mA SWITCHING 16 ns SILICON P-Channel 2.2 Ω @ 200mA, 10V 2.4V @ 250μA 50pF @ 5V 2.7nC @ 10V 1ns 1 ns 20V 20V 300mA Ta 4.5V 10V ±20V
RJK6006DPP-E0#T2 RJK6006DPP-E0#T2 Renesas 0.0000
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0.00000000 Surface Mount, Through Hole EAR99 150°C -55°C RoHS Compliant 3 TO-220-3 NOT SPECIFIED NOT SPECIFIED 3 25 ns 29W 5A 60 ns 17ns 10 ns 30V 600V 1.6 Ω 600pF
IXFX52N100X IXFX52N100X IXYS 30.1243
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0.00000000 download 19 Weeks HiPerFET™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 1250W Tc N-Channel 125m Ω @ 26A, 10V 6V @ 4mA 6725pF @ 25V 245nC @ 10V 52A Tc 1000V 10V ±30V
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