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FQU2N60CTU
FQU2N60CTU
598-FQU2N60CTU
TO-251-3 Short Leads, IPak, TO-251AA
FQU2N60CTU datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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FQU2N60CTU Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 235pF @ 25V.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.9A.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 24 ns.As far as peak drain current is concerned, its maximum pulsed current is 7.6A.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
FQU2N60CTU Features
a continuous drain current (ID) of 1.9A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 24 ns
based on its rated peak drain current 7.6A.
FQU2N60CTU Applications
There are a lot of ON Semiconductor FQU2N60CTU applications of single MOSFETs transistors.
- LCD/LED TV
- Synchronous Rectification
- LCD/LED/ PDP TV Lighting
- Power Management Functions
- PFC stages, hard switching PWM stages and resonant switching
- Uninterruptible Power Supply
- Server power supplies
- AC-DC Power Supply
- Load switching
- Motor drives and Uninterruptible Power Supplies
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FQU2N60CTU
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