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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Output Current Case Connection Halogen Free Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Number of Terminals Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
BSZ165N04NS G BSZ165N04NS G Infineon Technologies AG 0.0000
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0.00000000 icon-pbfree no 1 (Unlimited) EAR99 RoHS Compliant not_compliant ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 YES R-PDSO-F8 150°C FET General Purpose Powers Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL 25W 8 SWITCHING 0.0165Ohm 40V METAL-OXIDE SEMICONDUCTOR SILICON 31A 124A 5 mJ
RJK0629DPE-00#J3 RJK0629DPE-00#J3 Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) ROHS3 Compliant SC-83 Surface Mount 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 4 100W Tc 85A N-Channel 4.5m Ω @ 43A, 10V 4100pF @ 10V 85nC @ 10V 85A Ta 60V 4.5V 10V ±20V
IPB47N10S33ATMA1 IPB47N10S33ATMA1 Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2001 SIPMOS® Last Time Buy 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE 175W Tc 0.033Ohm 100V SILICON N-Channel 33m Ω @ 33A, 10V 4V @ 2mA 2500pF @ 25V 105nC @ 10V 47A 47A Tc 100V 188A 400 mJ 10V ±20V
FCD1300N80Z FCD1300N80Z ON Semiconductor 0.0000
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0.00000000 download 15 Weeks ACTIVE (Last Updated: 4 days ago) Surface Mount Tape & Reel (TR) SuperFET® II yes Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant 1.3Ohm Surface Mount 260.37mg -55°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) 245 NOT SPECIFIED 1 FET General Purpose Power Single 14 ns 52W Tc 4A 33 ns N-Channel 1.3 Ω @ 2A, 10V 4.5V @ 400μA 880pF @ 100V 21nC @ 10V 8.3ns 6 ns 30V 4A 4A Tc 800V 10V ±20V
IXFL39N90 IXFL39N90 IXYS 0.0000
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0.00000000 download Through Hole Tube 2003 HiPerFET™ yes Active 1 (Unlimited) 3 20.29mm ROHS3 Compliant 264 AVALANCHE RATED ISOPLUS264™ 26.42mm 5.21mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 Not Qualified 1 ISOLATED Single 580W 45 ns 580W Tc 34A SWITCHING 0.22Ohm 125 ns SILICON N-Channel 220m Ω @ 19.5A, 10V 5V @ 8mA 13400pF @ 25V 375nC @ 10V 68ns 30 ns 20V 900V 34A Tc 154A 4000 mJ 10V ±20V
IRF7204TRPBF IRF7204TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 1997 HEXFET® Active 1 (Unlimited) 8 4.9784mm ROHS3 Compliant Contains Lead, Lead Free -5.3A No 8 LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 60mOhm Surface Mount -55°C~150°C TJ -20V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 5.3A Single 2.5W 14 ns -2.5V 2.5W Tc 100 ns -5.3A SWITCHING 100 ns SILICON P-Channel 60m Ω @ 5.3A, 10V 2.5V @ 250μA 860pF @ 10V 25nC @ 10V 26ns 68 ns 12V -20V -20V -2.5 V 5.3A Ta 20V 4.5V 10V ±12V
AUIRLS3034 AUIRLS3034 Infineon Technologies 0.0000
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0.00000000 download 39 Weeks Surface Mount Tube 2011 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 375W 65 ns 375W Tc 195A SWITCHING 97 ns SILICON N-Channel 1.7m Ω @ 195A, 10V 2.5V @ 250μA 10315pF @ 25V 162nC @ 4.5V 827ns 355 ns 20V 40V 195A Tc 255 mJ 4.5V 10V ±20V
PHB95NQ04LT,118 PHB95NQ04LT,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 1997 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 157W Tc N-Channel 7m Ω @ 25A, 10V 2V @ 1mA 2700pF @ 25V 32.7nC @ 5V 75A Tc 40V 4.5V 10V ±15V
RJK60S7DPP-E0#T2 RJK60S7DPP-E0#T2 Renesas Electronics America 14.7595
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0.00000000 download Through Hole Tube 2012 Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Single 27 ns 34.7W Tc 30A 55 ns N-Channel 125m Ω @ 15A, 10V 2300pF @ 25V 39nC @ 10V 28ns 9 ns 30V Super Junction 30A Tc 600V 10V +30V, -20V
IRF7853PBF IRF7853PBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Tube 2006 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 4.9784mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 18MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 Single 2.5W 13 ns 4.9V 2.5W Ta 68 ns 8.3A 26 ns N-Channel 18m Ω @ 8.3A, 10V 4.9V @ 100μA 1640pF @ 25V 39nC @ 10V 6.6ns 6 ns 20V 100V 100V 4.9 V 8.3A Ta 10V ±20V
TK18A50D(STA4,Q,M) TK18A50D(STA4,Q,M) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2009 π-MOSVII Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-220-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) TO-220SIS 50W Tc 18A N-Channel 270mOhm @ 9A, 10V 4V @ 1mA 2600pF @ 25V 45nC @ 10V 50ns 25 ns 30V 18A Ta 500V 2.6nF 10V ±30V 270 mΩ
IXTP3N120 IXTP3N120 IXYS / Littelfuse 0.0000
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0.00000000 download 24 Weeks Through Hole Tube 2004 HiPerFET™ yes Active Not Applicable 3 EAR99 ROHS3 Compliant Lead Free 3A No 3 AVALANCHE RATED TO-220-3 No SVHC 4.5Ohm Through Hole -55°C~150°C TJ 1.2kV MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) 3 1 TO-220AB DRAIN Single 200W 5V 200W Tc 3A SWITCHING 32 ns SILICON N-Channel 4.5 Ω @ 500mA, 10V 5V @ 250μA 1350pF @ 25V 42nC @ 10V 15ns 18 ns 20V 1.1kV 3A 3A Tc 1200V 700 mJ 10V ±20V
IXFA4N85X IXFA4N85X IXYS 0.0000
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0.00000000 download 19 Weeks Tube 2016 HiPerFET™ yes Active 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 150W Tc N-Channel 2.5 Ω @ 2A, 10V 5.5V @ 250μA 247pF @ 25V 7nC @ 10V 3.5A Tc 850V 10V ±30V
TK50P03M1(T6RSS-Q) TK50P03M1(T6RSS-Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2011 U-MOSVI-H Active 1 (Unlimited) 150°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) DP 47W Tc 50A N-Channel 7.5mOhm @ 25A, 10V 2.3V @ 200μA 1700pF @ 10V 25.3nC @ 10V 20ns 22 ns 20V 50A Ta 30V 1.7nF 4.5V 10V ±20V 7.5 mΩ
IPP60R125CPXKSA1 IPP60R125CPXKSA1 Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2007 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free 25A 3 TO-220-3 Through Hole -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 208W 15 ns 600V 208W Tc 25A SWITCHING 50 ns SILICON N-Channel 125m Ω @ 16A, 10V 3.5V @ 1.1mA 2500pF @ 100V 70nC @ 10V 5ns 20V 25A Tc 650V 82A 708 mJ 10V ±20V
FQP5N60C FQP5N60C ON Semiconductor 0.0000
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0.00000000 download 4 Weeks ACTIVE (Last Updated: 3 days ago) Through Hole Tube 2013 QFET® yes Active 1 (Unlimited) 3 EAR99 10.1mm ROHS3 Compliant Lead Free 4.5A No 3 TO-220-3 No SVHC 9.4mm 4.7mm 2.5Ohm Through Hole 1.8g -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) FET General Purpose Power 1 TO-220AB Single 100W 10 ns 4V 100W Tc 4.5A SWITCHING 38 ns SILICON N-Channel 2.5 Ω @ 2.25A, 10V 4V @ 250μA 670pF @ 25V 19nC @ 10V 42ns 46 ns 30V 600V 4.5A Tc 10V ±30V
HUF75307T3ST HUF75307T3ST Rochester Electronics, LLC 0.0000
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0.00000000 download Tape & Reel (TR) yes Obsolete 1 (Unlimited) 4 ROHS3 Compliant TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL GULL WING 260 30 YES R-PDSO-G4 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.1W Ta SWITCHING 0.009Ohm 55V SILICON N-Channel 90m Ω @ 2.6A, 10V 4V @ 250μA 250pF @ 25V 17nC @ 20V 2.6A 2.6A Ta 55V 10V ±20V
SUP50N03-5M1P-GE3 SUP50N03-5M1P-GE3 Vishay Siliconix 0.0000
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0.00000000 download Through Hole Bulk 2008 TrenchFET® Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC Through Hole 6.000006g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) 260 30 3 1 FET General Purpose Power 1 TO-220AB Single 2.7W 8 ns 1V 2.7W Ta 59.5W Tc 50A SWITCHING 35 ns SILICON N-Channel 5.1m Ω @ 22A, 10V 2.5V @ 250μA 2780pF @ 15V 66nC @ 10V 9ns 9 ns 20V 50A Tc 30V 80 mJ 4.5V 10V ±20V
AUIRFR8401 AUIRFR8401 Infineon Technologies 0.0000
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0.00000000 download 13 Weeks Surface Mount Tube 2009 HEXFET® Discontinued 1 (Unlimited) 175°C -55°C 6.73mm ROHS3 Compliant Lead Free Tin No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) IRFR8401 1 1 Single 79W 7.9 ns 3.9V 4.25mOhm D-Pak 79W Tc 100A 25 ns N-Channel 4.25mOhm @ 60A, 10V 3.9V @ 50μA 2200pF @ 25V 63nC @ 10V 34ns 24 ns 20V 40V 2.2 V 100A Tc 40V 2.2nF 10V ±20V 4.25 mΩ
IRF6617TR1 IRF6617TR1 Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2005 HEXFET® Obsolete 3 (168 Hours) Non-RoHS Compliant DirectFET™ Isometric ST Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) DIRECTFET™ ST 2.1W Ta 42W Tc N-Channel 8.1mOhm @ 15A, 10V 2.35V @ 250μA 1300pF @ 15V 17nC @ 4.5V 14A Ta 55A Tc 30V 4.5V 10V ±20V
BUK958R5-40E,127 BUK958R5-40E,127 NXP USA Inc. 0.0000
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0.00000000 Tube 2012 TrenchMOS™ Obsolete 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 NO R-PSFM-T3 FET General Purpose Power AEC-Q101; IEC-60134 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 96W Tc SWITCHING 0.0081Ohm 40V SILICON N-Channel 6.6m Ω @ 20A, 10V 2.1V @ 1mA 2600pF @ 25V 20.9nC @ 5V 75A 75A Tc 40V 315A 44 mJ 5V 10V ±10V
IPI80N04S2H4AKSA2 IPI80N04S2H4AKSA2 Rochester Electronics, LLC 0.0000
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0.00000000 download Tube OptiMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) PG-TO262-3-1 300W Tc N-Channel 3.7mOhm @ 80A, 10V 4V @ 250μA 4.4pF @ 25V 148nC @ 10V 80A Tc 40V 10V ±20V
FDMC7572S FDMC7572S ON Semiconductor 0.0000
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0.00000000 download 10 Weeks ACTIVE (Last Updated: 6 days ago) Surface Mount Tape & Reel (TR) PowerTrench®, SyncFET™ yes Active 1 (Unlimited) 5 EAR99 3.4mm ROHS3 Compliant Lead Free No 8 8-PowerTDFN No SVHC 1mm 3.4mm Surface Mount 32.13mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL S-PDSO-N5 FET General Purpose Power 1 MO-240BA DRAIN Single 52W 11 ns 1.7V 2.3W Ta 52W Tc 40A SWITCHING 26 ns SILICON N-Channel 3.15m Ω @ 22.5A, 10V 3V @ 1mA 2705pF @ 13V 44nC @ 10V 3.6ns 3 ns 20V 25V 1.7 V 22.5A 22.5A Ta 40A Tc 4.5V 10V ±20V
FQD7N20TF FQD7N20TF ON Semiconductor 0.0000
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0.00000000 download Tape & Reel (TR) 2000 QFET® Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) D-Pak 2.5W Ta 45W Tc N-Channel 690mOhm @ 2.65A, 10V 5V @ 250μA 400pF @ 25V 10nC @ 10V 5.3A Tc 200V 10V ±30V
SI4666DY-T1-GE3 SI4666DY-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2014 TrenchFET® Obsolete 1 (Unlimited) 8 EAR99 ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) Unknown Surface Mount 506.605978mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE MATTE TIN DUAL GULL WING 260 30 8 1 1 SINGLE WITH BUILT-IN DIODE 2.5W 13 ns 2.5W Ta 5W Tc 16.5A SWITCHING 27 ns SILICON N-Channel 10m Ω @ 10A, 10V 1.5V @ 250μA 1145pF @ 10V 34nC @ 10V 12ns 10 ns 12V 25V 600 mV 16.5A Tc 2.5V 10V ±12V
FQPF10N20 FQPF10N20 ON Semiconductor 0.0000
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0.00000000 download Tube 2000 QFET® yes Obsolete 1 (Unlimited) 3 EAR99 TO-220-3 Full Pack not_compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 40W Tc SWITCHING 0.36Ohm 200V SILICON N-Channel 360m Ω @ 3.4A, 10V 5V @ 250μA 670pF @ 25V 18nC @ 10V 9.5A 6.8A Tc 200V 38A 210 mJ 10V ±30V
SI1302DL-T1-GE3 SI1302DL-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2016 TrenchFET® yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant No 3 SC-70, SOT-323 Surface Mount 6.208546mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 40 3 1 FET General Purpose Power 1 Single 5 ns 280mW Ta 600mA 0.48Ohm 8 ns SILICON N-Channel 480m Ω @ 600mA, 10V 3V @ 250μA 1.4nC @ 10V 8ns 7 ns 20V 0.6A 600mA Ta 30V 4.5V 10V ±20V
IRFZ24PBF IRFZ24PBF Vishay Siliconix 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2011 yes Active 1 (Unlimited) 3 EAR99 10.41mm ROHS3 Compliant Lead Free No 3 TO-220-3 Unknown 9.01mm 4.7mm 100mOhm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) 260 40 3 1 FET General Purpose Power 1 TO-220AB Single 60W 13 ns 4V 60W Tc 17A SWITCHING 25 ns SILICON N-Channel 100m Ω @ 10A, 10V 4V @ 250μA 640pF @ 25V 25nC @ 10V 58ns 42 ns 20V 60V 17A Tc 68A 10V ±20V
SISS27ADN-T1-GE3 SISS27ADN-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Tape & Reel (TR) TrenchFET® Gen III Active 1 (Unlimited) EAR99 ROHS3 Compliant PowerPAK® 1212-8S unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 57W Tc P-Channel 5.1m Ω @ 15A, 10V 2.2V @ 250μA 4660pF @ 15V 55nC @ 4.5V 50A Tc 30V 4.5V 10V ±20V
IRLML2246TRPBF IRLML2246TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET® Active 1 (Unlimited) 3 EAR99 3.04mm ROHS3 Compliant Lead Free No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.02mm 1.4mm 236MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING Other Transistors 1 Single 1.3W 5.3 ns -1.1V 1.3W Ta 26 ns 2.6A SWITCHING 26 ns SILICON P-Channel 135m Ω @ 2.6A, 4.5V 1.1V @ 10μA 220pF @ 16V 2.9nC @ 4.5V 7.7ns 16 ns 12V -20V -1.1 V 2.6A Ta 20V 2.5V 4.5V ±12V
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