Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Load Capacitance | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Reverse Pinout | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SST26VF016BT-104V/MF | Microchip Technology | 1.8113 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel (TR) | 2016 | SST26 SQI® | Active | 3 (168 Hours) | 8 | 6mm | ROHS3 Compliant | 8-WDFN Exposed Pad | SPI | 5mm | Surface Mount | -40°C~105°C TA | CMOS | SYNCHRONOUS | 0.8mm | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | 3V | SST26VF016B | YES | 1.27mm | R-PDSO-N8 | 2.7V | 3.6V | 16Mb 2M x 8 | Non-Volatile | 0.025mA | 2.7V~3.6V | 16MX1 | 1 | 16777216 bit | SERIAL | 104MHz | 0.000025A | 100 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | SPI | NO | FLASH | SPI - Quad I/O | 1.5ms | BOTTOM/TOP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1345B-117AC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 100 | 20mm | Non-RoHS Compliant | FLOW-THROUGH ARCHITECTURE | 100-LQFP | 14mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | NOT SPECIFIED | QUAD | 3.3V | 100 | YES | 0.65mm | R-PQFP-G100 | 3.135V | COMMERCIAL | 3.6V | 7.5ns | 4.5Mb 128K x 36 | Volatile | 3.15V~3.6V | 128KX36 | 36 | 4718592 bit | 117MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TH58NYG2S3HBAI4 | Kioxia America, Inc. | 5.4360 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | RoHS Compliant | 63-BGA | Surface Mount | -40°C~85°C TA | FLASH - NAND (SLC) | 4Gb 512M x 8 | Non-Volatile | 1.7V~1.95V | FLASH | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1354C-200BGC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | 2004 | NoBL™ | Obsolete | 3 (168 Hours) | 119 | 3A991.B.2.A | 3.3V | 4 | 22mm | Non-RoHS Compliant | Contains Lead | 119 | PIPELINED ARCHITECTURE | 119-BGA | not_compliant | 9 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1 | 220mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 3.3V | NOT SPECIFIED | CY7C1354 | 119 | 1.27mm | 3.135V | Not Qualified | 3.6V | 3-STATE | 3.2ns | 9Mb 256K x 36 | Volatile | 18b | 3.135V~3.6V | 256KX36 | 36 | Synchronous | 200MHz | 36b | COMMON | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS7C4096A-20TIN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2001 | Active | 3 (168 Hours) | 85°C | -40°C | 5V | 1 | ROHS3 Compliant | No | 44-TSOP (0.400, 10.16mm Width) | Parallel | 5.5V | 4.5V | 4 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 44-TSOP2 | 20ns | 4Mb 512K x 8 | Volatile | 19b | 4.5V~5.5V | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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93C56T-E/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Surface Mount | Tape & Reel (TR) | 2000 | no | Active | 1 (Unlimited) | 8 | 5V | ROHS3 Compliant | Lead Free | Tin | No | 8 | 10K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 8-SOIC (0.154, 3.90mm Width) | Serial | 2 kb | Surface Mount | -40°C~125°C TA | CMOS | 1 | 4mA | e0 | DUAL | 5V | 93C56 | 8 | 1.27mm | 5V | 3-STATE | 2 μs | 2Kb 256 x 8 128 x 16 | Non-Volatile | 4.5V~5.5V | 8 | 2MHz | 0.0001A | 16 | 40 | 1000000 Write/Erase Cycles | SOFTWARE | 1ms | MICROWIRE | EEPROM | SPI | 2ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT58K256M321JA-100:A") |
MT58K256M321JA-100:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 190-TFBGA | Surface Mount | 0°C~95°C TC | SGRAM - GDDR5 | 8Gb 256M x 32 | Volatile | 1.31V~1.39V | 5GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CAT24C05WI-G | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2009 | Obsolete | 1 (Unlimited) | 5V | 5mm | RoHS Compliant | Gold | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | 4 kb | 1.5mm | 4mm | Surface Mount | -40°C~85°C TA | 1mA | CAT24C05 | 900ns | 4Kb 512 x 8 | Non-Volatile | 1.8V~5.5V | 400kHz | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3557SA85BGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 119 | 3A991.B.2.A | 85°C | -40°C | 22mm | Non-RoHS Compliant | FLOW-THROUGH ARCHITECTURE | BGA | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 2.36mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 119 | INDUSTRIAL | YES | 1.27mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.235mA | 128KX36 | 36 | 4718592 bit | 90MHz | 0.045A | 8.5 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RMLV0808BGBG-4S2#AC0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 20 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 48-TFBGA | Surface Mount | -40°C~85°C TA | 8Mb 512K x 16 | Volatile | 2.4V~3.6V | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28C64E-25TI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1999 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 28-TSSOP (0.465, 11.80mm Width) | Surface Mount | -40°C~85°C TC | EEPROM | AT28C64 | 28-TSOP | 250ns | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 200μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W25Q80BVSNIG TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2014 | SpiFlash® | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 8Mb 1M x 8 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI | 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
24AA08H-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tube | 2007 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.9mm | ROHS3 Compliant | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | I2C, Serial | 8 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 24AA08H | 8 | 1.27mm | 1.7V | 900ns | 8Kb 256 x 8 x 4 | Non-Volatile | 1.7V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010XMMR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MX29GL128EDXFI-11G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2009 | Not For New Designs | 64 | 3A991.B.1.A | 3.6V | 13mm | RoHS Compliant | Lead Free | 128 Mb | 11mm | CMOS | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | NOR TYPE | BOTTOM | BALL | NOT SPECIFIED | 3V | NOT SPECIFIED | 64 | INDUSTRIAL | YES | 1mm | R-PBGA-B64 | 2.7V | 85°C | -40°C | Flash Memories | Not Qualified | 1.8/3.33/3.3V | 110 ns | 0.1mA | 128MX16 | 16 | FLASH | PARALLEL | 0.0001A | 8 | 3V | YES | YES | YES | 128 | 8/16words | YES | YES | 128K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT40A4G4DVN-062H:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Active | 78 | 1 | AUTO/SELF REFRESH | compliant | CMOS | SYNCHRONOUS | 1 | BOTTOM | BALL | 1.2V | OTHER | YES | R-PBGA-B78 | 1.14V | 95°C | 1.26V | 4GX4 | 4 | 17179869184 bit | DDR DRAM | DUAL BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V256SA15YI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2010 | no | 3 (168 Hours) | 28 | EAR99 | 85°C | -40°C | 1 | 17.9324mm | Non-RoHS Compliant | 28 | Parallel | not_compliant | 7.5184mm | CMOS | 3.556mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 3.3V | 30 | 28 | INDUSTRIAL | YES | 1.27mm | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.085mA | 32KX8 | 8 | 262144 bit | 0.002A | 15 ns | YES | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24CW1280-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | 24CW | Active | 3 (168 Hours) | 8 | 4.9mm | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.75mm | 1 | DUAL | 1.8V | YES | 1.27mm | R-PDSO-G8 | 1.6V | 5.5V | 450ns | TS 16949 | 128Kb 16K x 8 | Non-Volatile | 1.6V~5.5V | 16KX8 | 8 | 131072 bit | SERIAL | 1MHz | 5ms | I2C | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MX29F400CBTC-70G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tray | 2005 | MX29F | Not For New Designs | 3 (168 Hours) | 48 | EAR99 | 18.4mm | ROHS3 Compliant | BOTTOM BOOT BLOCK | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | 0°C~70°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 40 | 48 | YES | 0.5mm | R-PDSO-G48 | 4.5V | Not Qualified | 5V | 5.5V | 4Mb 512K x 8 | Non-Volatile | 0.05mA | 4.5V~5.5V | 256KX16 | 16 | 4194304 bit | 0.000005A | 70 ns | 8 | 100000 Write/Erase Cycles | 5V | YES | YES | YES | 1217 | YES | FLASH | Parallel | 70ns | 16K8K32K64K | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S-93C66BD0I-D8S1G | ABLIC U.S.A. Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | 8 | EAR99 | 9.6mm | RoHS Compliant | 8-DIP (0.300, 7.62mm) | 7.62mm | Through Hole | -40°C~85°C TA | CMOS | SYNCHRONOUS | 5.08mm | 8542.32.00.51 | 1 | e4 | PALLADIUM | DUAL | 260 | 5V | 10 | 8 | NO | 2.54mm | R-PDIP-T8 | 1.8V | Not Qualified | 2/5V | 5.5V | 4Kb 256 x 16 | Non-Volatile | 0.002mA | 1.8V~5.5V | 128X16 | 16 | 2048 bit | SERIAL | 2MHz | 0.0000015A | 10 | 1000000 Write/Erase Cycles | SOFTWARE | 8ms | MICROWIRE | EEPROM | SPI | 8ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
THGBMHG6C1LBAWL | Kioxia America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | e•MMC™ | Obsolete | 3 (168 Hours) | 153-WFBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | 64Gb 8G x 8 | Non-Volatile | 2.7V~3.6V | 52MHz | FLASH | eMMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR93G46FJ-3AGE2 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Active | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | 8-SOP-J | 1Kb 64 x 16 | Non-Volatile | 1.5V~5.5V | 3MHz | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W9825G2JB-6I TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 90-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM | 5ns | 256Mb 8M x 32 | Volatile | 2.7V~3.6V | 166MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M95040-WMN6 | STMicroelectronics | 0.3769 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 4 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | e0 | TIN LEAD | DUAL | 5V | M95040 | 8 | YES | 1.27mm | 2.5V | 3/5V | 5.5V | 150 ns | 4Kb 512 x 8 | Non-Volatile | 0.002mA | 2.5V~5.5V | 8 | 20MHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V65903S85BQ8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | Non-RoHS Compliant | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V65903 | 8.5ns | 9Mb 512K x 18 | Volatile | 3.135V~3.465V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS3030W-100# | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2006 | Obsolete | 5 (48 Hours) | 256 | EAR99 | 27mm | ROHS3 Compliant | Lead Free | 256 | 256-BGA | not_compliant | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 8.72mm | 8542.32.00.41 | 1 | e0 | TIN LEAD | BOTTOM | 225 | 3.3V | NOT SPECIFIED | DS3030W | 256 | YES | 1.27mm | 3V | Not Qualified | 3.6V | 256Kb 32K x 8 | Non-Volatile | 3V~3.6V | 32KX8 | 8 | 262144 bit | 8b | 100 ns | NVSRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT42L256M32D2LK-25 WT:A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 216-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR2 | MT42L256M32 | 8Gb 256M x 32 | Volatile | 1.14V~1.3V | 400MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC04B/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2009 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.4mm | ROHS3 Compliant | Tin | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | I2C, Serial | 4 kb | 3mm | Surface Mount | 0°C~70°C TA | CMOS | 1.2mm | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 24LC04B | 8 | 0.65mm | 5.5V | 900ns | 4Kb 256 x 8 x 2 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 5ms | I2C | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F256G08AUEDBJ6-12:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | 3.3V | ROHS3 Compliant | 132-LBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | 132-LBGA (12x18) | 256Gb 32G x 8 | Non-Volatile | 2.7V~3.6V | 83MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61LPS25618A-200B2LI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 2 (1 Year) | 85°C | -40°C | ROHS3 Compliant | 119-BBGA | Parallel | 3.465V | 3.135V | 200MHz | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 200MHz | 119-PBGA (14x22) | 3.1ns | 4.5Mb 256K x 18 | Volatile | 3.135V~3.465V | 200MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1225AD-85+ | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 28 | EAR99 | 5V | 39.37mm | ROHS3 Compliant | Lead Free | No | 28 | 10 YEAR DATA RETENTION | 28-DIP Module (0.600, 15.24mm) | Unknown | 64 kb | 85GHz | 10.67mm | 18.29mm | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 75mA | 8473.30.11.40 | 1 | e3 | TIN | DUAL | 260 | 5V | DS1225A | 28 | 2.54mm | SRAMs | 5V | 5pF | 64Kb 8K x 8 | Non-Volatile | 8b | 4.5V~5.5V | 8KX8 | 8b | 0.01A | 85 ns | NVSRAM | Parallel | 85ns |
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