Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Ambient Temperature Range High | Voltage | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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71T75802S150BGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | 2012 | no | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 2.5V | 1 | 14mm | RoHS Compliant | Contains Lead | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 2.625V | 2.375V | 18 Mb | 150MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 235mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 119 | INDUSTRIAL | SRAMs | 3-STATE | 3.8 ns | RAM, SRAM | 20b | Synchronous | 0.045A | 18b | COMMON | 2.38V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24AA16T-E/MNY | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | Active | 1 (Unlimited) | 8 | 3mm | ROHS3 Compliant | 8 | HAVING CLOCK FREQUENCY 100 KHZ FOR <2.5V, 1.7V MIN SUPPLY | 8-WFDFN Exposed Pad | 2-Wire, I2C, Serial | 2mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 40 | 24AA16 | 0.5mm | 2.5V | Not Qualified | 2/5V | 5.5V | 900ns | TS 16949 | 16Kb 2K x 8 | Non-Volatile | 0.003mA | 1.7V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010MMMR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS45S16100H-7TLA2-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 50 | 1 | 20.95mm | ROHS3 Compliant | AUTO/SELF REFRESH | 50-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~105°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.8mm | R-PDSO-G50 | 3V | 3.6V | 5.5ns | 16Mb 1M x 16 | Volatile | 3V~3.6V | 1MX16 | 16 | 16777216 bit | 143MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY62146GN30-45BVXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | MoBL® | Active | 3 (168 Hours) | 48 | 8mm | ROHS3 Compliant | 48 | 48-VFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1mm | 8542.32.00.41 | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.75mm | 2.2V | 3.6V | 4Mb 256K x 16 | Volatile | 2.2V~3.6V | 256KX16 | 16 | 4194304 bit | 45 ns | SRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S34ML01G200TFI500 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2017 | ML-2 | Discontinued | 3 (168 Hours) | 3V | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 1 Gb | Surface Mount | -40°C~85°C TA | FLASH - NAND | 1Gb 128M x 8 | Non-Volatile | 2.7V~3.6V | 2kB | FLASH | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V424YL12PH | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V424 | 44-TSOP II | 12ns | 4Mb 512K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61QDB41M36C-250M3L | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 165 | 3A991.B.2.A | 17mm | ROHS3 Compliant | 165-LBGA | 15mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QUAD | 1.4mm | 8542.32.00.41 | 1 | BOTTOM | 1.8V | YES | 1mm | R-PBGA-B165 | 1.71V | 1.89V | 8.4ns | 36Mb 1M x 36 | Volatile | 1.71V~1.89V | 1MX36 | 36 | 37748736 bit | 250MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
NAND512R3A2SZAXE | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Surface Mount | Tray | 2004 | Obsolete | 3 (168 Hours) | 63 | 1.8V | 11mm | ROHS3 Compliant | No | 63 | 63-TFBGA | 512 Mb | Surface Mount | -40°C~85°C TA | 3.3V | FLASH - NAND | 1.05mm | 1 | 15mA | BOTTOM | 1.8V | NAND512 | 0.8mm | 3.3V | 512Mb 64M x 8 | Non-Volatile | 26b | 1.7V~1.95V | 64MX8 | 8 | Asynchronous | 0.00005A | 45 ns | 8b | NO | NO | YES | 4K | 528B | YES | FLASH | Parallel | 50ns | 16K | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C25632KV18-450BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Surface Mount | Tray | 2003 | Active | 3 (168 Hours) | 165 | 1.8V | 2 | 15mm | Non-RoHS Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 72 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II+ | 1.4mm | 1 | 780mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 235 | 1.8V | 20 | CY7C25632 | 1mm | 1.7V | 1.9V | 3-STATE | 450 ps | 72Mb 4M x 18 | Volatile | 20b | 1.7V~1.9V | 4MX18 | 18 | Synchronous | 450MHz | 0.34A | 18b | SEPARATE | 1.7V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "7140LA55L48B") |
7140LA55L48B | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Bulk | 2013 | Active | 125°C | -55°C | 5V | 2 | 14.2mm | RoHS Compliant | Contains Lead | No | 48 | BQFN | Parallel | 8 kb | 14.22mm | 1.78mm | RAM, SRAM | 20b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53B256M64D2PX-062 XT:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 9 Weeks | Tray | Active | -30°C~105°C TC | SDRAM - Mobile LPDDR4 | 16Gb 256M x 64 | Volatile | 1.1V | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V26S25JI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 84-LCC (J-Lead) | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 256Kb 16K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
11LC160-E/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Tube | 2008 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 10.16mm | ROHS3 Compliant | Tin | No | 8 | 8-DIP (0.300, 7.62mm) | Serial | 16 kb | 4.953mm | 7.112mm | Through Hole | -40°C~125°C TA | CMOS | 1 | 5mA | e3 | DUAL | 5V | 11LC160 | 8 | NO | 2.54mm | 16Kb 2K x 8 | Non-Volatile | 2.5V~5.5V | 100kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 10ms | 1-WIRE | EEPROM | Single Wire | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3557S80PFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2009 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | FLOW-THROUGH ARCHITECHTURE | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 95MHz | 14mm | 1.4mm | CMOS | 1 | 260mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | 0.65mm | SRAMs | 3-STATE | 8 ns | 100MHz | 512kB | RAM, SDR, SRAM | 17b | Synchronous | 0.045A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL064N90FAI013 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | 2016 | GL-N | Active | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | Non-RoHS Compliant | No | 64 | 64-LBGA | 64 Mb | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.4mm | 8542.32.00.51 | 1 | e0 | TIN LEAD | BOTTOM | 240 | 3V | 30 | YES | 1mm | 2.7V | 3/3.3V | 3.6V | 64Mb 8M x 8 4M x 16 | Non-Volatile | 0.05mA | 2.7V~3.6V | 4MX16 | 16 | 0.000005A | 90 ns | 8 | 3V | YES | YES | YES | 128 | 8/16words | YES | YES | FLASH | Parallel | 90ns | 64K | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
11LC160T-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.9mm | ROHS3 Compliant | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Serial | 16 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 5mA | e3 | DUAL | 260 | 5V | 40 | 11LC160 | 8 | 1.27mm | 16Kb 2K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 100kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 10ms | 1-WIRE | EEPROM | Single Wire | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
EDFA364A3PK-GD-F-D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TC | SDRAM - Mobile LPDDR3 | 16Gb 256M x 64 | Volatile | 1.14V~1.95V | 800MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71256SA12YG8 | Renesas Electronics America Inc. | 8.8974 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 28-BSOJ (0.300, 7.62mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71256 | 256Kb 32K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V632S6PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V632 | 6ns | 2Mb 64K x 32 | Volatile | 3.135V~3.63V | 83MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24CM01-SSHM-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | yes | Active | 3 (168 Hours) | 8 | 4.925mm | ROHS3 Compliant | Lead Free | Gold | 8 | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C | 1 Mb | 1.75mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | 3mA | e4 | DUAL | 260 | 5V | 40 | AT24CM01 | 1.27mm | 1.7V | Not Qualified | 5.5V | 85°C | 550ns | 1Mb 128K x 8 | Non-Volatile | 1.7V~5.5V | 8 | SERIAL | 1MHz | 0.000001A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
71342LA25J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 240mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 25 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V256SA10PZ | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 28-TSSOP (0.465, 11.80mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V256 | 28-TSOP | 10ns | 256Kb 32K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT41DC11TW-V88A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V67703S80BQG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel | 2009 | yes | Active | 3 (168 Hours) | 165 | 70°C | 0°C | 3.3V | 1 | 15mm | RoHS Compliant | Lead Free | No | 165 | FLOW-THROUGH ARCHITECTURE | Parallel | 9 Mb | 13mm | 1.2mm | CMOS | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 165 | COMMERCIAL | YES | SRAMs | 3.465V | 3-STATE | RAM, SRAM | 18b | 256KX36 | 0.05A | 8 ns | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY62148ELL-45ZSXAT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | MoBL® | Obsolete | 3 (168 Hours) | 32 | 5V | 1 | ROHS3 Compliant | Lead Free | No | 32-SOIC (0.400, 10.16mm Width) | 4 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | e3 | Matte Tin (Sn) | DUAL | 5V | CY62148 | YES | R-PDSO-G32 | 5V | 3-STATE | 4Mb 512K x 8 | Volatile | 19b | 0.02mA | 4.5V~5.5V | 8 | 0.000007A | 45 ns | COMMON | 2V | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
PZ28F032M29EWHA | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2012 | yes | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 8mm | ROHS3 Compliant | No | 48 | 48-VFBGA | 32 Mb | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1mm | 8542.32.00.51 | 1 | 25mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | PZ28F032M29 | YES | 0.8mm | 3/3.3V | 2.7V | 32Mb 4M x 8 2M x 16 | Non-Volatile | 2.7V~3.6V | 2MX16 | 16 | Asynchronous | 0.00012A | 65 ns | 8 | YES | YES | YES | 64 | 8/16words | YES | YES | FLASH | Parallel | 60ns | 64K | |||||||||||||||||||||||||||||||||||||||||||||||||
|
11LC161-E/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | 2009 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 9.271mm | ROHS3 Compliant | Tin | 8 | 8-DIP (0.300, 7.62mm) | Serial | 16 kb | 7.62mm | Through Hole | -40°C~125°C TA | CMOS | SYNCHRONOUS | 5.334mm | 1 | 5mA | e3 | DUAL | NOT APPLICABLE | 5V | NOT APPLICABLE | 11LC161 | 8 | 2.54mm | 2.5V | Not Qualified | 3/5V | 5.5V | 16Kb 2K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 100kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 10ms | 1-WIRE | EEPROM | Single Wire | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3577S85BGG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 119-BGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V3577 | 119-PBGA (14x22) | 8.5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 87MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M29W128FT70N6E | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | Lead Free | 56-TFSOP (0.724, 18.40mm Width) | Parallel | 70GHz | Surface Mount | -40°C~85°C TA | FLASH - NOR | M29W128 | 56-TSOP | 70ns | 128Mb 16M x 8 8M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IDT71T75602S200PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71T75 | 3.2ns | 18Mb 512K x 36 | Volatile | 2.375V~2.625V | 200MHz | SRAM | Parallel |
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71T75802S150BGI Integrated Device Technology (IDT)
Surface Mount 119 Pin Memory IC 18 Mb kb 14mm mm 235mA mA 18b b
Price: 0.0000
RFQ -
-
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CY62146GN30-45BVXIT Cypress Semiconductor Corp
MoBL® Memory IC MoBL® Series 8mm mm
Price: 0.0000
RFQ -
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-
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NAND512R3A2SZAXE Micron Technology Inc.
Surface Mount Memory IC NAND512 512 Mb kb 11mm mm 15mA mA 8b b
Price: 0.0000
RFQ -
CY7C25632KV18-450BZC Cypress Semiconductor Corp
Surface Mount Memory IC CY7C25632 72 Mb kb 15mm mm 780mA mA 18b b
Price: 0.0000
RFQ -
-
-
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11LC160-E/P Microchip Technology
8 Pin Memory IC 11LC160 16 kb kb 10.16mm mm 5mA mA
Price: 0.0000
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11LC160T-I/SN Microchip Technology
Surface Mount 8 Pin Memory IC 11LC160 16 kb kb 4.9mm mm 5mA mA
Price: 0.0000
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PZ28F032M29EWHA Micron Technology Inc.
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11LC161-E/P Microchip Technology
3/5V V Through Hole 8 Pin Memory IC 11LC161 16 kb kb 9.271mm mm 5mA mA
Price: 0.0000
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