Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Reverse Pinout | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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71V416S10PHGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | IDT71V416 | 44-TSOP II | 10ns | 4Mb 256K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49LV1025-90VC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2016 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 40-TFSOP (0.488, 12.40mm Width) | Surface Mount | 0°C~70°C TC | AT49LV1025 | 90ns | 1Mb 64K x 16 | Non-Volatile | 3V~3.6V | FLASH | Parallel | 50μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT41K256M16TW-107 AT:P") |
MT41K256M16TW-107 AT:P | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 96 | 1 | 14mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-TFBGA | 8mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | 1.35V | YES | 0.8mm | R-PBGA-B96 | 1.283V | 1.45V | 20ns | 4Gb 256M x 16 | Volatile | 1.283V~1.45V | 256MX16 | 16 | 4294967296 bit | 933MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93AA56T/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 29 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, Serial | 2 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 3mA | e3 | DUAL | 260 | 3V | 40 | 93AA56 | 8 | 1.27mm | 2/5V | 5.5V | 3-STATE | 6 ms | 2Kb 256 x 8 128 x 16 | Non-Volatile | 1.8V~5.5V | 16 | 2MHz | 0.00003A | 8 | 200 | 10000000 Write/Erase Cycles | SOFTWARE | 10ms | MICROWIRE | EEPROM | SPI | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT42L64M64D2MP-25 IT:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2012 | Obsolete | 3 (168 Hours) | 220 | 1 | 14mm | ROHS3 Compliant | SELF REFRESH; IT ALSO REQUIRES 1.2V NOM | 220-WFBGA | 14mm | Surface Mount | -25°C~85°C TC | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 0.8mm | 1 | BOTTOM | 1.8V | MT42L64M64 | YES | 0.5mm | S-PBGA-B220 | 1.7V | 1.95V | 4Gb 64M x 64 | Volatile | 1.14V~1.3V | 64MX64 | 64 | 4294967296 bit | 400MHz | MULTI BANK PAGE BURST | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C025E-25AXC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | 100-TQFP (14x14) | 25ns | 128Kb 8K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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R1LV5256ESA-7SI#B0 | Renesas Electronics America | 5.0644 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Surface Mount | Tray | 2011 | yes | Active | 2 (1 Year) | 28 | EAR99 | 3V | 1 | ROHS3 Compliant | No | 28 | 28-TSSOP (0.465, 11.80mm Width) | 256 kb | Surface Mount | -40°C~85°C TA | CMOS | 1 | 25mA | DUAL | 3V | R1LV5256E | 28 | 0.55mm | 2.7V | 3.6V | 3-STATE | 256Kb 32K x 8 | Volatile | 15b | 2.7V~3.6V | 32KX8 | 8 | Asynchronous | 70 ns | 8b | COMMON | 2V | SRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CY15E064J-SXE | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tube | Automotive, AEC-Q100, F-RAM™ | Active | 3 (168 Hours) | 8 | EAR99 | 4.889mm | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 3.8985mm | Surface Mount | -40°C~125°C TA | FRAM (Ferroelectric RAM) | SYNCHRONOUS | 1.727mm | 8542.32.00.71 | 1 | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G8 | 3V | 3.6V | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | 8KX8 | 8 | 65536 bit | 3.4MHz | FRAM | I2C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S29GL512T12TFN020 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | GL-T | Active | 3 (168 Hours) | 56 | 18.4mm | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | 14mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | DUAL | 3V | YES | 0.5mm | R-PDSO-G56 | 2.7V | 3.6V | 120ns | 512Mb 64M x 8 | Non-Volatile | 2.7V~3.6V | 32MX16 | 16 | 536870912 bit | 8 | 2.7V | FLASH | Parallel | 60ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL129P0XBHI310 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tray | 2007 | FL-P | Obsolete | 3 (168 Hours) | 24 | 3A991.B.1.A | 8mm | ROHS3 Compliant | 24 | 24-TBGA | SPI, Serial | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | BOTTOM | 3V | YES | 1mm | 2.7V | Not Qualified | 3/3.3V | 3.3V | 128Mb 16M x 8 | Non-Volatile | 0.038mA | 2.7V~3.6V | 16MX8 | 8 | 134217728 bit | 104MHz | 0.00001A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | SPI | FLASH | SPI - Quad I/O | 5μs, 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F2G08ABBGAH4-AAT:G TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F1G16ABBEAHC-IT:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tape & Reel (TR) | 1996 | Active | 3 (168 Hours) | ROHS3 Compliant | 63-VFBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | MT29F1G16 | 1Gb 64M x 16 | Non-Volatile | 1.7V~1.95V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53D256M64D4KA-046 XT:ES B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | -30°C~105°C TC | SDRAM - Mobile LPDDR4 | 16Gb 256M x 64 | Volatile | 1.1V | 2133MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3556SA100BQG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Surface Mount | 2006 | yes | Active | 3 (168 Hours) | 165 | 70°C | 0°C | 3.3V | 1 | 15mm | RoHS Compliant | Lead Free | No | 165 | Parallel | 3.465V | 3.135V | 4.5 Mb | 100MHz | 13mm | 1.2mm | CMOS | 1 | 250mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 165 | COMMERCIAL | SRAMs | 3-STATE | 5 ns | 100MHz | 512kB | RAM, SDR, SRAM | 17b | Synchronous | 0.04A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BU99901GUZ-WE2 | ROHM Semiconductor | 0.2781 |
Min: 1 Mult: 1 |
0.00000000 | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | yes | Not For New Designs | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | No | 6 | 6-XFBGA, CSPBGA | 2-Wire, I2C, Serial | 32 kb | 1.05mm | Surface Mount | -40°C~85°C TA | CMOS | 0.35mm | 8542.32.00.51 | 1 | BOTTOM | 2.5V | BU99901 | 6 | 0.5mm | 1.7V | 1.8/3.3V | 32Kb 4K x 8 | Non-Volatile | 0.0041mA | 1.7V~3.6V | 4KX8 | 8 | 400kHz | 0.000002A | 40 | 100000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010000R | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F128G08CFCGBWP-10M:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 26 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND | 48-TSOP I | 128Gb 16G x 8 | Non-Volatile | 2.7V~3.6V | 100MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT44K32M18RB-125E IT:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tray | 2014 | Active | 3 (168 Hours) | 168 | EAR99 | 1 | 13.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 168-TBGA | 13.5mm | Surface Mount | -40°C~95°C TC | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | BOTTOM | 1.35V | MT44K32M18 | 168 | YES | 1mm | S-PBGA-B168 | 1.28V | 1.42V | 10ns | 576Mb 32M x 18 | Volatile | 1.28V~1.42V | 32MX18 | 18 | 603979776 bit | 800MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT61M256M32JE-12 AAT:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 180-TFBGA | Surface Mount | -40°C~105°C | SGRAM - GDDR6 | 8Gb 256M x 32 | Volatile | 1.21V~1.29V | 1.5GHz | RAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V34S25PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT70V34 | 72Kb 4K x 18 | Volatile | 3V~3.6V | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL064N11FFIV13 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 18 Weeks | Tape & Reel (TR) | 1997 | GL-N | Active | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | 64 | 64-LBGA | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | 260 | 3V | 40 | YES | 1mm | 2.7V | Not Qualified | 1.8/3.33/3.3V | 3.6V | 64Mb 8M x 8 4M x 16 | Non-Volatile | 0.05mA | 1.65V~3.6V | 4MX16 | 16 | 0.000005A | 110 ns | 8 | 3V | YES | YES | YES | 128 | 8/16words | YES | YES | FLASH | Parallel | 110ns | 64K | BOTTOM/TOP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SST25PF040CT-40E/MF | Microchip Technology | 1.5859 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100, SST25 | Active | 3 (168 Hours) | 8 | 6mm | RoHS Compliant | 8-WDFN Exposed Pad | compliant | 5mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 0.8mm | 1 | DUAL | 3.3V | YES | 1.27mm | R-PDSO-N8 | 2.3V | 3.6V | 4Mb 512K x 8 | Non-Volatile | 0.015mA | 2.3V~3.6V | 4MX1 | 1 | 4194304 bit | SERIAL | 40MHz | 0.00001A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3.3V | SPI | NO | FLASH | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
34AA02T-I/MNY | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 3mm | ROHS3 Compliant | Gold | 8 | 8-WFDFN Exposed Pad | I2C, Serial | 2 kb | 2mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | 3mA | e4 | DUAL | 260 | 2.5V | 40 | 34AA02 | 8 | 0.5mm | 1.7V | Not Qualified | 900ns | 2Kb 256 x 8 | Non-Volatile | 1.7V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93C76AT-I/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.4mm | ROHS3 Compliant | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | Serial | 8 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1.1mm | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 40 | 93C76A | 8 | 0.65mm | 8Kb 1K x 8 | Non-Volatile | 4.5V~5.5V | 512X16 | 16 | 3MHz | 8 | 2ms | MICROWIRE | EEPROM | SPI | 2ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F2G16ABBEAM69A3WC1 | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 2 Gb | 0°C~70°C TA | 1.8V | FLASH - NAND | 1.8V | 2Gb 128M x 16 | Non-Volatile | 1.7V~1.95V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT41DC11TW-V88A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V25761S183PFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Bulk | 2009 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | PIPELINED ARCHITECTURE | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 183MHz | 14mm | 1.4mm | CMOS | 1 | 350mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | 0.65mm | SRAMs | 3-STATE | 3.3 ns | 183MHz | 512kB | RAM, SDR, SRAM | 17b | Synchronous | 0.035A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F512G08EKCBBJ5-6:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT48LC64M4A2P-75 L:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Box | 2012 | yes | Discontinued | 2 (1 Year) | 54 | EAR99 | 1 | 22.22mm | ROHS3 Compliant | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.24 | 1 | e3 | MATTE TIN | DUAL | 260 | 3.3V | 30 | MT48LC64M4A2 | 54 | YES | 0.8mm | R-PDSO-G54 | 3V | Not Qualified | 3.3V | 3.6V | 3-STATE | 5.4ns | 256Mb 64M x 4 | Volatile | 0.27mA | 3V~3.6V | 64MX4 | 4 | 268435456 bit | 133MHz | 0.002A | COMMON | 8192 | DRAM | Parallel | 15ns | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CY7C1019CV33-12ZXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2002 | Obsolete | 3 (168 Hours) | 32 | 3.3V | 1 | 20.95mm | ROHS3 Compliant | Lead Free | 32 | 32-SOIC (0.400, 10.16mm Width) | unknown | 1 Mb | 12GHz | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 1 | 75mA | e3 | Matte Tin (Sn) | DUAL | 260 | 3.3V | 20 | CY7C1019 | 32 | 2.97V | Not Qualified | 3.63V | 3-STATE | 1Mb 128K x 8 | Volatile | 17b | 3V~3.6V | 8 | Asynchronous | 0.005A | 8b | COMMON | 2V | SRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT93C46E-PU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 10.16mm | ROHS3 Compliant | Tin | No | 8 | 8-DIP (0.300, 7.62mm) | Serial | No SVHC | 1 kb | 4.953mm | 7.112mm | Through Hole | -40°C~85°C TA | 2mA | e3 | AT93C46 | 2/5V | 1Kb 64 x 16 | Non-Volatile | 1.8V~5.5V | 2MHz | 100 | 1000000 Write/Erase Cycles | SOFTWARE | 3-WIRE | EEPROM | SPI | 5ms |
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93AA56T/SN Microchip Technology
2/5V V Surface Mount 8 Pin Memory IC 93AA56 2 kb kb 4.9mm mm 3mA mA
Price: 0.0000
RFQ -
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R1LV5256ESA-7SI#B0 Renesas Electronics America
Surface Mount 28 Pin Memory IC R1LV5256E 256 kb kb 25mA mA 8b b
Price: 5.0644
RFQ -
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71V25761S183PFGI Integrated Device Technology (IDT)
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CY7C1019CV33-12ZXC Cypress Semiconductor Corp
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AT93C46E-PU Microchip Technology
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