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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Current JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Voltage Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Source Url Status Check Date Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max Capacitance - Input
2SK2962,T6WNLF(M 2SK2962,T6WNLF(M Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Bulk 2009 Obsolete 1 (Unlimited) TO-226-3, TO-92-3 Long Body Through Hole TO-92MOD
IXFN400N15X3 IXFN400N15X3 IXYS 0.0000
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0.00000000 download 19 Weeks Tube HiPerFET™ Active SOT-227-4, miniBLOC compliant Chassis Mount -55°C~150°C TJ MOSFET (Metal Oxide) 695W Tc N-Channel 2.5m Ω @ 200A, 10V 4.5V @ 8mA 23700pF @ 25V 365nC @ 10V 400A Tc 150V 10V ±20V
TSM088NA03CR RLG TSM088NA03CR RLG Taiwan Semiconductor Corporation 0.0000
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0.00000000 download 28 Weeks Digi-Reel® 2016 Discontinued 1 (Unlimited) ROHS3 Compliant 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 8-PDFN (5x6) 56W Tc N-Channel 8.8mOhm @ 13A, 10V 2.5V @ 250μA 750pF @ 15V 12.6nC @ 10V 61A Tc 30V 4.5V 10V ±20V
NTD4905N-35G NTD4905N-35G ON Semiconductor 0.0000
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0.00000000 download LAST SHIPMENTS (Last Updated: 1 week ago) Through Hole Tube 2010 yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 3 TO-251-3 Stub Leads, IPak Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.4W Ta 44W Tc 67A SWITCHING 0.007Ohm SILICON N-Channel 4.5m Ω @ 30A, 10V 2.2V @ 250μA 2340pF @ 15V 33nC @ 10V 12A 12A Ta 67A Tc 30V 264A 61 mJ 4.5V 10V ±20V
HUF75639P3 HUF75639P3 ON Semiconductor 0.0000
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0.00000000 download 9 Weeks ACTIVE (Last Updated: 3 days ago) Through Hole Tube 2002 UltraFET™ yes Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free Tin 56A No 3 TO-220-3 No SVHC 9.4mm 4.83mm 25mOhm Through Hole 1.8g -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FET General Purpose Power 1 TO-220AB DRAIN Single 200W 15 ns 4V 200W Tc 56A SWITCHING 20 ns SILICON N-Channel 25m Ω @ 56A, 10V 4V @ 250μA 2000pF @ 25V 130nC @ 20V 60ns 25 ns 20V 100V 56A Tc 10V ±20V
IRF620PBF IRF620PBF Vishay Siliconix 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2004 Active 1 (Unlimited) 150°C -55°C 10.41mm ROHS3 Compliant Lead Free 5.2A No 3 TO-220-3 Unknown 9.01mm 4.7mm 800mOhm Through Hole 6.000006g -55°C~150°C TJ 250V MOSFET (Metal Oxide) 52A 1 200V 1 Single 50W 7.2 ns 2V 800mOhm TO-220AB 50W Tc 300 ns 5.2A 19 ns N-Channel 800mOhm @ 3.1A, 10V 4V @ 250μA 260pF @ 25V 14nC @ 10V 22ns 13 ns 20V 200V 2 V 5.2A Tc 200V 260pF 10V ±20V 800 mΩ
IRF3703PBF IRF3703PBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Lead Free Tin 210A No 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-220-3 No SVHC 15.24mm 4.69mm 2.8Ohm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 FET General Purpose Power 1 TO-220AB DRAIN Single 230W 18 ns 4V 3.8W Ta 230W Tc 210A SWITCHING 53 ns SILICON N-Channel 2.8m Ω @ 76A, 10V 4V @ 250μA 8250pF @ 25V 209nC @ 10V 123ns 24 ns 20V 30V 30V 4 V 75A 210A Tc 7V 10V ±20V
BUK761R8-30C,118 BUK761R8-30C,118 NXP USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2007 TrenchMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3 333W Tc 2013-06-14 00:00:00 N-Channel 1.8m Ω @ 25A, 10V 4V @ 1mA 10349pF @ 25V 150nC @ 10V 100A Tc 30V 10V ±20V
RK7002BMT116 RK7002BMT116 ROHM Semiconductor 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2014 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free TO-236-3, SC-59, SOT-23-3 not_compliant Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED R-PDSO-G3 1 1 SINGLE WITH BUILT-IN DIODE 3.5 ns 200mW Ta 250mA SWITCHING 3.2Ohm 18 ns SILICON N-Channel 2.4 Ω @ 250mA, 10V 2.3V @ 1mA 15pF @ 25V 5ns 28 ns 20V 60V 0.25A 250mA Ta 2.5V 10V ±20V
NTP2955 NTP2955 Rochester Electronics, LLC 0.0000
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0.00000000 download Tube no Obsolete 1 (Unlimited) 3 Non-RoHS Compliant TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e0 TIN LEAD SINGLE 240 30 3 NO R-PSFM-T3 COMMERCIAL 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 2.4W Ta 62.5W Tc SWITCHING 0.196Ohm 60V SILICON P-Channel 196m Ω @ 12A, 10V 4V @ 250μA 700pF @ 25V 14nC @ 10V 2.4A 2.4A Ta 60V 42A 216 mJ 10V ±20V
R6535ENZC17 R6535ENZC17 ROHM Semiconductor 6.7895
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0.00000000 download Active 1 (Unlimited) ROHS3 Compliant TO-3P-3 Full Pack Through Hole 150°C TJ MOSFET (Metal Oxide) 102W Tc N-Channel 115m Ω @ 18.1A, 10V 4V @ 1.21mA 2.6nF @ 25V 110nC @ 10V 35A Tc 650V 10V ±20V
IXFT23N60Q IXFT23N60Q IXYS 0.0000
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0.00000000 download Surface Mount Bulk 2003 HiPerFET™ yes Active 1 (Unlimited) 2 ROHS3 Compliant TO-268-3, D3Pak (2 Leads + Tab), TO-268AA not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 DRAIN Single 400W 400W Tc 23A SWITCHING 0.32Ohm 45 ns SILICON N-Channel 320m Ω @ 500mA, 10V 4.5V @ 4mA 3300pF @ 25V 90nC @ 10V 20ns 20 ns 30V 600V 23A Tc 92A 1500 mJ 10V ±30V
FDB035N10A FDB035N10A ON Semiconductor 0.0000
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0.00000000 download 8 Weeks ACTIVE (Last Updated: 4 days ago) Surface Mount Tape & Reel (TR) 2013 PowerTrench® yes Active 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.83mm 9.65mm 3.5MOhm Surface Mount 1.31247g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 333W 22 ns 333W Tc 214A SWITCHING 37 ns SILICON N-Channel 3.5m Ω @ 75A, 10V 4V @ 250μA 7295pF @ 25V 116nC @ 10V 54ns 11 ns 20V 100V 120A Tc 704A 558 mJ 10V ±20V
C3M0021120K C3M0021120K Cree/Wolfspeed 0.0000
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0.00000000 4 Weeks C3M™ Active 1 (Unlimited) TO-247-4 Through Hole -40°C~175°C TJ SiCFET (Silicon Carbide) TO-247-4L 469W Tc N-Channel 28.8mOhm @ 50A, 15V 3.6V @ 17.7mA 4818pF @ 1000V 162nC @ 15V 100A Tc 1200V 15V +15V, -4V
IPU05N03LA IPU05N03LA Infineon Technologies 0.0000
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0.00000000 download Through Hole Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant Contains Lead 50A LOGIC LEVEL COMPATIBLE TO-251-3 Short Leads, IPak, TO-251AA unknown Through Hole -55°C~175°C TJ 25V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 94W Tc 50A SWITCHING 0.0086Ohm SILICON N-Channel 5.3m Ω @ 30A, 10V 2V @ 50μA 3110pF @ 15V 25nC @ 5V 50A Tc 300 mJ 4.5V 10V ±20V
IPB60R385CPATMA1 IPB60R385CPATMA1 Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2006 CoolMOS™ no Obsolete 1 (Unlimited) EAR99 RoHS Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 4 Halogen Free Single 83W 10 ns 3V 83W Tc 9A 40 ns N-Channel 385m Ω @ 5.2A, 10V 3.5V @ 340μA 790pF @ 100V 22nC @ 10V 5ns 5 ns 20V 650V 3 V 9A Tc 600V 10V ±20V
FQD4N25TM FQD4N25TM ON Semiconductor 0.0000
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0.00000000 Tape & Reel (TR) 2016 QFET® yes Obsolete 1 (Unlimited) 2 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 2.5W Ta 37W Tc SWITCHING 250V SILICON N-Channel 1.75 Ω @ 1.5A, 10V 5V @ 250μA 200pF @ 25V 5.6nC @ 10V 3A 3A Tc 250V 12A 52 mJ 10V ±30V
2SK2544(F) 2SK2544(F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Through Hole Bulk 2009 Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free No TO-220-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 1 Single 80W 1.25Ohm TO-220AB 80W Tc 6A N-Channel 1.25Ohm @ 3A, 10V 4V @ 1mA 1300pF @ 10V 30nC @ 10V 25ns 40 ns 30V 600V 6A Ta 600V 1.3nF 10V ±30V 1.25 Ω
EPC2021 EPC2021 EPC 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 eGaN® Active 1 (Unlimited) 150°C -40°C ROHS3 Compliant Die Surface Mount -40°C~150°C TJ GaNFET (Gallium Nitride) Die 90A N-Channel 2.5mOhm @ 29A, 5V 2.5V @ 14mA 1650pF @ 40V 15nC @ 5V 90A Ta 80V 1.65nF 5V +6V, -4V 2.5 mΩ
EPC8009 EPC8009 EPC 869.8591
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 eGaN® Active 1 (Unlimited) 150°C -40°C ROHS3 Compliant Die Surface Mount -40°C~150°C TJ GaNFET (Gallium Nitride) Die 2.7A N-Channel 130mOhm @ 500mA, 5V 2.5V @ 250μA 52pF @ 32.5V 0.45nC @ 5V 2.7A Ta 65V 52pF 5V +6V, -4V 130 mΩ
EPC2023ENG EPC2023ENG EPC 0.0000
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0.00000000 download 22 Weeks Surface Mount 2012 150°C -40°C RoHS Compliant 60A 30V 1.3 mΩ 2.3nF
SISH407DN-T1-GE3 SISH407DN-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Tape & Reel (TR) TrenchFET® Active 1 (Unlimited) ROHS3 Compliant PowerPAK® 1212-8SH Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) PowerPAK® 1212-8SH 3.6W Ta 33W Tc P-Channel 9.5mOhm @ 15.3A, 4.5V 1V @ 250μA 2760pF @ 10V 93.8nC @ 8V 15.4A Ta 25A Tc 20V 1.8V 4.5V ±8V
IRF710STRLPBF IRF710STRLPBF Vishay Siliconix 3.5951
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 150°C -55°C 10.67mm ROHS3 Compliant No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.83mm 9.65mm Surface Mount 1.437803g -55°C~150°C TJ MOSFET (Metal Oxide) 1 1 Single 3.1W 8 ns 3.6Ohm D2PAK 3.1W Ta 36W Tc 2A 21 ns N-Channel 3.6Ohm @ 1.2A, 10V 4V @ 250μA 170pF @ 25V 17nC @ 10V 9.9ns 11 ns 20V 400V 2A Tc 400V 170pF 10V ±20V 3.6 Ω
IPI65R310CFDXKSA1 IPI65R310CFDXKSA1 Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Through Hole Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE Halogen Free 11 ns 650V 104.2W Tc 11.4A SWITCHING 45 ns SILICON N-Channel 310m Ω @ 4.4A, 10V 4.5V @ 440μA 1100pF @ 100V 41nC @ 10V 7.5ns 7 ns 20V 11.4A Tc 34.4A 290 mJ 10V ±20V
IRF830ALPBF IRF830ALPBF Vishay Siliconix 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2016 Active 1 (Unlimited) 150°C -55°C 10.41mm ROHS3 Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA Unknown 9.65mm 4.7mm 1.4Ohm Through Hole 2.387001g -55°C~150°C TJ MOSFET (Metal Oxide) 1 1 Single 3.1W 10 ns 4.5V 1.4Ohm I2PAK 3.1W Ta 74W Tc 5A 21 ns N-Channel 1.4Ohm @ 3A, 10V 4.5V @ 250μA 620pF @ 25V 24nC @ 10V 21ns 15 ns 30V 5A Tc 500V 620pF 10V ±30V 1.4 Ω
EPC2045 EPC2045 EPC 0.0000
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0.00000000 download 12 Weeks Tape & Reel (TR) eGaN® Active 1 (Unlimited) ROHS3 Compliant Die Surface Mount -40°C~150°C TJ GaNFET (Gallium Nitride) Die N-Channel 7mOhm @ 16A, 5V 2.5V @ 5mA 685pF @ 50V 6.5nC @ 5V 16A Ta 100V 5V +6V, -4V
RJK03M4DPA-WS#J5A RJK03M4DPA-WS#J5A Renesas Electronics America 0.0000
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0.00000000 download Obsolete
FDS86252 FDS86252 ON Semiconductor 0.0000
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0.00000000 download 9 Weeks ACTIVE (Last Updated: 2 days ago) Surface Mount Tape & Reel (TR) 2008 PowerTrench® yes Active 1 (Unlimited) 8 EAR99 4mm ROHS3 Compliant No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.5mm 5mm Surface Mount 130mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e4 Nickel/Palladium/Gold (Ni/Pd/Au) DUAL GULL WING FET General Purpose Power 1 Single 5W 9.2 ns 3.4V 2.5W Ta 5W Tc 4.5A SWITCHING 0.055Ohm 14 ns SILICON N-Channel 55m Ω @ 4.5A, 10V 4V @ 250μA 955pF @ 75V 15nC @ 10V 1.6ns 2.9 ns 20V 150V 3.4 V 4.5A Ta 5 pF 6V 10V ±20V
SPP08N80C3 SPP08N80C3 Infineon 0.0000
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0.00000000 download 6 Weeks 2000 yes Active 3 150°C -55°C 10.36mm RoHS Compliant Contains Lead 8A 3 AVALANCHE RATED, HIGH VOLTAGE TO-220-3 No SVHC 15.95mm 4.57mm 800V ENHANCEMENT MODE e3 Matte Tin (Sn) THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED 3 NO FET General Purpose Power Not Qualified 1 TO-220AB Halogen Free N-CHANNEL Single 104W 25 ns 650mOhm 104W 8A METAL-OXIDE SEMICONDUCTOR 65 ns 15ns 7 ns 20V 800V 8A 24A 650 mΩ 1.1nF
FQA9N50 FQA9N50 ON Semiconductor 0.0000
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0.00000000 download Through Hole Tube 2000 QFET® Obsolete 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free 9.6A 3 TO-3P-3, SC-65-3 Through Hole -55°C~150°C TJ 500V MOSFET (Metal Oxide) Single 160W 730mOhm TO-3P 160W Tc 9.6A 55 ns N-Channel 730mOhm @ 4.8A, 10V 5V @ 250μA 1450pF @ 25V 36nC @ 10V 95ns 60 ns 30V 500V 9.6A Tc 500V 1.45nF 10V ±30V 730 mΩ
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