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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
NTMSD2P102LR2G NTMSD2P102LR2G ON Semiconductor 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2006 FETKY™ Obsolete 3 (168 Hours) 8 EAR99 RoHS Compliant Lead Free -2.3A LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ -20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING 260 40 8 R-PDSO-G8 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE 2W 710mW Ta 2.3A SWITCHING 0.09Ohm 33 ns SILICON P-Channel 90m Ω @ 2.4A, 4.5V 1.5V @ 250μA 750pF @ 16V 18nC @ 4.5V 35ns 29 ns 10V -20V Schottky Diode (Isolated) 2.3A Ta 20V 175 pF 2.5V 4.5V ±10V
FDB42AN15A0 FDB42AN15A0 Rochester Electronics, LLC 0.0000
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0.00000000 download Tape & Reel (TR) PowerTrench® Obsolete 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) TO-263AB 150W Tc N-Channel 42mOhm @ 12A, 10V 4V @ 250μA 2.15pF @ 25V 39nC @ 10V 5A Ta 35A Tc 150V 6V 10V ±20V
STP7N95K3 STP7N95K3 STMicroelectronics 0.0000
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0.00000000 download 12 Weeks ACTIVE (Last Updated: 7 months ago) Through Hole Tube SuperMESH3™ Active 1 (Unlimited) 3 EAR99 10.4mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 15.75mm 4.6mm 1.35Ohm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) STP7N 3 FET General Purpose Power 1 TO-220AB Single 150W 14 ns 4V 150W Tc 7.2A SWITCHING 36 ns SILICON N-Channel 1.35 Ω @ 3.6A, 10V 5V @ 100μA 1031pF @ 100V 34nC @ 10V 9ns 23 ns 30V 950V 7.2A Tc 28.8A 220 mJ 10V ±30V
HUF76609D3 HUF76609D3 ON Semiconductor 0.0000
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0.00000000 download Through Hole Tube 2002 UltraFET™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free 10A TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 FET General Purpose Power Not Qualified 1 TO-252AA DRAIN Single 49W 49W Tc 10A SWITCHING 30 ns SILICON N-Channel 160m Ω @ 10A, 10V 3V @ 250μA 425pF @ 25V 16nC @ 10V 41ns 28 ns 16V 100V 10A Tc 4.5V 10V ±16V
IXTK120N25P IXTK120N25P IXYS / Littelfuse 0.0000
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0.00000000 download 17 Weeks Through Hole Tube 2006 PolarHT™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-264-3, TO-264AA No SVHC unknown 24MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 700W 5V 700W Tc 120A SWITCHING 130 ns SILICON N-Channel 24m Ω @ 60A, 10V 5V @ 500μA 8000pF @ 25V 185nC @ 10V 33ns 33 ns 20V 250V 120A Tc 2.5 mJ 10V ±20V
IPI057N08N3 G IPI057N08N3 G Infineon Technologies 0.0000
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0.00000000 download Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE 260 40 3 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 150W Tc SWITCHING 0.0057Ohm 80V SILICON N-Channel 5.7m Ω @ 80A, 10V 3.5V @ 90μA 4750pF @ 40V 69nC @ 10V 80A 80A Tc 80V 320A 210 mJ 6V 10V ±20V
EPC2025 EPC2025 EPC 0.0000
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0.00000000 Surface Mount Tape & Reel (TR) 2012 eGaN® Obsolete 1 (Unlimited) 150°C -40°C RoHS Compliant Die Surface Mount -40°C~150°C TJ GaNFET (Gallium Nitride) Die 4A N-Channel 150mOhm @ 3A, 5V 2.5V @ 1mA 194pF @ 240V 4A Ta 300V 194pF 5V +6V, -4V 150 mΩ
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