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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
GP1M020A050N GP1M020A050N Global Power 0.0000
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0.00000000 download 12 Weeks 2014 Discontinued Non-RoHS Compliant
IXTA230N075T2-TRL IXTA230N075T2-TRL IXYS 0.0000
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0.00000000 28 Weeks Active TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 480W Tc N-Channel 4.2m Ω @ 50A, 10V 4V @ 250μA 10500pF @ 25V 178nC @ 10V 230A Tc 75V 10V ±20V
IXFL38N100P IXFL38N100P IXYS 0.0000
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0.00000000 download 26 Weeks Through Hole Tube 2009 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 AVALANCHE RATED ISOPLUSi5-Pak™ Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 ISOLATED Single 520W 520W Tc 29A SWITCHING 71 ns SILICON N-Channel 230m Ω @ 19A, 10V 6.5V @ 1mA 24000pF @ 25V 350nC @ 10V 55ns 40 ns 30V 1kV 29A Tc 1000V 120A 2000 mJ 10V ±30V
BUK7208-40B,118 BUK7208-40B,118 Nexperia USA Inc. 0.0000
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0.00000000 download 26 Weeks Tape & Reel (TR) 2010 Automotive, AEC-Q101, TrenchMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free Tin No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~185°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 3 YES R-PSSO-G2 1 TO-252AA DRAIN Single 167W 16 ns 40V 167W Tc 105A SWITCHING 0.008Ohm 47 ns SILICON N-Channel 8m Ω @ 25A, 10V 4V @ 1mA 2493pF @ 25V 35nC @ 10V 104ns 51 ns 20V 40V 75A 75A Tc 240 mJ 10V ±20V
IPA057N06N3GXKSA1 IPA057N06N3GXKSA1 Infineon Technologies 0.0000
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0.00000000 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 24 ns 60V 38W Tc 60A SWITCHING 0.0057Ohm 32 ns SILICON N-Channel 5.7m Ω @ 60A, 10V 4V @ 58μA 6600pF @ 30V 82nC @ 10V 68ns 9 ns 20V 60A Tc 240A 77 mJ 10V ±20V
IRLR024NTRPBF IRLR024NTRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 17A No 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.52mm 6.22mm 80mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 TO-252AA DRAIN Single 45W 7.1 ns 2V 45W Tc 90 ns 17A 175°C SWITCHING 20 ns SILICON N-Channel 65m Ω @ 10A, 10V 2V @ 250μA 480pF @ 25V 15nC @ 5V 74ns 29 ns 16V 55V 55V 2 V 17A Tc 72A 68 mJ 4V 10V ±16V
VN10KN3-G-P003 VN10KN3-G-P003 Microchip Technology 0.6298
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0.00000000 download 6 Weeks Through Hole Tape & Reel (TR) 2013 Active 1 (Unlimited) 3 EAR99 5.21mm ROHS3 Compliant 3 TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 5.33mm 4.19mm Through Hole 453.59237mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power 1 Single 1W 1W Tc 310mA SWITCHING 5Ohm 60V SILICON N-Channel 5 Ω @ 500mA, 10V 2.5V @ 1mA 60pF @ 25V 30V 310mA Tj 60V 5 pF 5V 10V ±30V
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