Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Max Breakdown Voltage | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RJP65T54DPM-E0#T2 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | 1 (Unlimited) | TO-3PFM, SC-93-3 | compliant | Through Hole | 175°C TJ | Standard | 63.5W | 1.68V @ 15V, 30A | Trench | 650V | 60A | 400V, 30A, 10 Ω, 15V | 72nC | 225A | 35ns/120ns | 330μJ (on), 760μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
RJP65T54DPM-A0#T2 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2016 | Obsolete | Not Applicable | ROHS3 Compliant | SC-94 | Through Hole | 175°C TJ | Standard | 3 | 63.5W | 1.68V @ 15V, 30A | Trench | 650V | 60A | 400V, 30A, 10 Ω, 15V | 72nC | 35ns/120ns | 330μJ (on), 760μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGH48N60A3D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*48N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 300W | 25ns | 300A | 600V | 1.35V | POWER CONTROL | SILICON | 1.18V | 54 ns | 1.35V @ 15V, 32A | 925 ns | PT | 20V | 5V | 480V, 32A, 5 Ω, 15V | 110nC | 25ns/334ns | 950μJ (on), 2.9mJ (off) | |||||||||||||||||||||||||||
 |
IKQ50N120CT2XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2017 | TrenchStop™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 652W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | POWER CONTROL | SILICON | 79 ns | 2.15V @ 15V, 50A | 530 ns | Trench Field Stop | 1200V | 100A | 400V, 50A, 10 Ω, 15V | 235nC | 200A | 34ns/312ns | 3.8mJ (on), 3.3mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
 |
IRGS4064DTRLPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | Standard | 101W | 101W | Single | 62 ns | 20A | 600V | 1.91V | 1.91V @ 15V, 10A | Trench | 400V, 10A, 22 Ω, 15V | 32nC | 40A | 27ns/79ns | 29μJ (on), 200μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXYX200N65B3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Tube | XPT™, GenX3™ | Active | TO-247-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 1560W | 108ns | 1.7V @ 15V, 100A | 650V | 410A | 400V, 100A, 0 Ω, 15V | 340nC | 1100A | 60ns/370ns | 5mJ (on), 4mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FGH40T65SPD-F155 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2015 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | 6.39g | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 267W | 267W | N-CHANNEL | Single | 34 ns | 80A | 650V | 650V | 2.51V | 2.4V @ 15V, 40A | Trench Field Stop | 20V | 7.5V | 400V, 40A, 6 Ω, 15V | 35nC | 120A | 16ns/37ns | 1.16mJ (on), 280μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
|
FGH15T120SMD-F155 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2013 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | No | 3 | TO-247-3 | Through Hole | 6.39g | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 333W | N-CHANNEL | Single | 333W | 72ns | 30A | 1.2kV | 1.2kV | 1.9V | 2.4V @ 15V, 15A | Trench Field Stop | 25V | 1200V | 7.5V | 600V, 15A, 34 Ω, 15V | 128nC | 60A | 32ns/490ns | 1.15mJ (on), 460μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
 |
FGH20N6S2 | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | yes | Obsolete | 3 (168 Hours) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e3 | MATTE TIN | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 3 | NO | R-PSFM-T3 | COMMERCIAL | 125W | 1 | SINGLE | N-CHANNEL | POWER CONTROL | SILICON | 11.5 ns | 2.7V @ 15V, 7A | 205 ns | 600V | 28A | 390V, 7A, 25 Ω, 15V | 30nC | 40A | 7.7ns/87ns | 25μJ (on), 58μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
 |
APT30GS60BRDQ2G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 25 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | no | Active | 1 (Unlimited) | RoHS Compliant | No | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 250W | 250W | Single | 25 ns | 54A | 600V | 600V | 3.15V @ 15V, 30A | NPT | 400V, 30A, 9.1 Ω, 15V | 145nC | 113A | 16ns/360ns | 570μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
NGTB40N65IHL2WG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | 2014 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | e3 | Tin (Sn) | Insulated Gate BIP Transistors | 300W | 300W | N-CHANNEL | Single | 465 ns | 80A | 650V | 2.2V | 2.2V @ 15V, 40A | Trench Field Stop | 20V | 6.5V | 400V, 40A, 10 Ω, 15V | 135nC | 160A | -/140ns | 360μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
 |
NGTB75N65FL2WAG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | LAST SHIPMENTS (Last Updated: 2 weeks ago) | Tube | 2016 | yes | Obsolete | 1 (Unlimited) | RoHS Compliant | Lead Free | TO-247-4 | Through Hole | -55°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 536W | 90ns | 2V @ 15V, 75A | Field Stop | 650V | 200A | 400V, 75A, 10 Ω, 15V | 310nC | 23ns/157ns | 610μJ (on), 1.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SGP30N60XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1999 | Obsolete | 1 (Unlimited) | EAR99 | Non-RoHS Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 250W | 2.4V @ 15V, 30A | NPT | 600V | 41A | 400V, 30A, 11 Ω, 15V | 140nC | 112A | 44ns/291ns | 1.29mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXA55I1200HJ | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2009 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 16.13mm | ROHS3 Compliant | 3 | ISOPLUS247™ | No SVHC | 21.34mm | 5.21mm | Through Hole | -40°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 290W | 1 | ISOLATED | N-CHANNEL | Single | 290W | 84A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 2.1V | 110 ns | 2.1V @ 15V, 50A | 350 ns | PT | 20V | 1200V | 6.5V | 600V, 50A, 15 Ω, 15V | 190nC | 4.5mJ (on), 5.5mJ (off) | ||||||||||||||||||||||||||||||
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FGH40T65SHD-F155 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2012 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | not_compliant | Through Hole | 6.39g | -55°C~175°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 268W | 268W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AB | N-CHANNEL | 31.8 ns | 80A | 650V | 2.1V | POWER CONTROL | SILICON | 2.1V @ 15V, 40A | Trench Field Stop | 400V, 40A, 6 Ω, 15V | 72.2nC | 120A | 19.2ns/65.6ns | 1.01mJ (on), 297μJ (off) | |||||||||||||||||||||||||||||||||||||
 |
FGB20N60SFD-F085 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | 1.31247g | -55°C~150°C TJ | Standard | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | FGB20N60 | R-PSSO-G2 | Insulated Gate BIP Transistors | 208W | 208W | 1 | COLLECTOR | N-CHANNEL | Single | 600V | 111 ns | 40A | 600V | 600V | 21ns | POWER CONTROL | SILICON | 2.4V | 28 ns | 2.85V @ 15V, 20A | 123 ns | Field Stop | 20V | 6.5V | 400V, 20A, 10 Ω, 15V | 63nC | 60A | 10ns/90ns | 310μJ (on), 130μJ (off) | |||||||||||||||||||||||||||
|
IKP10N60TXKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2007 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 110W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 115ns | POWER CONTROL | SILICON | 21 ns | 2.05V @ 15V, 10A | 296 ns | NPT, Trench Field Stop | 600V | 20A | 400V, 10A, 23 Ω, 15V | 62nC | 30A | 12ns/215ns | 430μJ | ||||||||||||||||||||||||||||||||||||
 |
IHW30N90TFKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tube | 2008 | TrenchStop® | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | HIGH SPEED | TO-247-3 | compliant | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 428W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | POWER CONTROL | SILICON | 82 ns | 1.7V @ 15V, 30A | 691 ns | Trench Field Stop | 900V | 60A | 600V, 30A, 15 Ω, 15V | 280nC | 90A | 45ns/556ns | 1.8mJ (off) | |||||||||||||||||||||||||||||||||||||
 |
FGPF10N60UNDF | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | ACTIVE (Last Updated: 1 week ago) | Through Hole | Tube | 2013 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | No | 3 | TO-220-3 Full Pack | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~150°C TJ | Standard | 8541.29.00.95 | e3 | Tin (Sn) | Insulated Gate BIP Transistors | 42W | 42W | 1 | TO-220AB | ISOLATED | N-CHANNEL | Single | 37.7 ns | 20A | 600V | 600V | MOTOR CONTROL | SILICON | 2V | 15.4 ns | 2.45V @ 15V, 10A | 89.3 ns | NPT | 20V | 8.5V | 24.8ns | 400V, 10A, 10 Ω, 15V | 37nC | 30A | 8ns/52.2ns | 150μJ (on), 50μJ (off) | |||||||||||||||||||||||||||
 |
IXGX32N170AH1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Bulk | 2004 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*32N170 | 3 | Not Qualified | 350W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 350W | 150 ns | 32A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 4V | 74 ns | 5V @ 15V, 21A | 362 ns | NPT | 1700V | 850V, 32A, 2.7 Ω, 15V | 157nC | 110A | 27ns/270ns | 4.1mJ (on), 1.25mJ (off) | |||||||||||||||||||||||||||||||||
|
IXXH30N60B3D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 270W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 270W | 25ns | 60A | 600V | 600V | POWER CONTROL | SILICON | 1.66V | 57 ns | 1.85V @ 15V, 24A | 292 ns | PT | 20V | 5.5V | 400V, 24A, 10 Ω, 15V | 39nC | 115A | 23ns/97ns | 550μJ (on), 500μJ (off) | |||||||||||||||||||||||||||||||||||
 |
FGH30N60LSDTU | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | No | 3 | LOW CONDUCTION LOSS | TO-247-3 | No SVHC | 20.82mm | 4.82mm | Through Hole | 6.39g | -55°C~150°C TJ | Standard | 8541.29.00.95 | e3 | Tin (Sn) | Insulated Gate BIP Transistors | 480W | 480W | 1 | TO-247AB | COLLECTOR | N-CHANNEL | Single | 18 ns | 35 ns | 60A | 600V | 600V | POWER CONTROL | 250 ns | SILICON | 600V | 62 ns | 1.4V @ 15V, 30A | 2870 ns | 20V | 7V | 2000ns | 400V, 30A, 6.8 Ω, 15V | 225nC | 90A | 18ns/250ns | 1.1mJ (on), 21mJ (off) | |||||||||||||||||||||||
 |
HGT1S20N36G3VL | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | Obsolete | 1 (Unlimited) | RoHS Compliant | Lead Free | 20A | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -40°C~175°C TJ | 360V | Logic | 150W | Single | 150W | 37.7A | 395V | 1.9V | 1.3V | 1.9V @ 5V, 20A | 300V, 10A, 25 Ω, 5V | 28.7nC | -/15μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG7PH30K10DPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2009 | Obsolete | 1 (Unlimited) | 3 | EAR99 | 15.87mm | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 20.7mm | 5.3086mm | Through Hole | -55°C~150°C TJ | Standard | e3 | MATTE TIN OVER NICKEL | 250 | 30 | Insulated Gate BIP Transistors | 180W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 180W | 23 ns | 140ns | 30A | 1.2kV | 2.35V | 41ns | POWER CONTROL | 130 ns | SILICON | 2.35V | 34 ns | 2.35V @ 15V, 9A | 390 ns | Trench | 1200V | 7.5V | 56ns | 600V, 9A, 22 Ω, 15V | 45nC | 27A | 14ns/110ns | 530μJ (on), 380μJ (off) | |||||||||||||||||||||||||
|
HGT1S12N60A4DS | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | ACTIVE, NOT REC (Last Updated: 1 day ago) | Surface Mount | Tube | yes | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 1.31247g | -55°C~150°C TJ | Standard | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | 260 | 30 | HGT1S12N60 | R-PSSO-G2 | 167W | 1 | COLLECTOR | N-CHANNEL | Single | 167W | 17 μs | 30ns | 54A | 600V | 600V | POWER CONTROL | 96 μs | SILICON | 2.7V | 33 ns | 2.7V @ 15V, 12A | 180 ns | 390V, 12A, 10 Ω, 15V | 78nC | 96A | 17ns/96ns | 55μJ (on), 50μJ (off) | |||||||||||||||||||||||||||||
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IKW08T120FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Through Hole | Tube | 2007 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -40°C~150°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 70W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 70W | 80 ns | 16A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 66 ns | 2.2V @ 15V, 8A | 710 ns | NPT, Trench Field Stop | 1200V | 600V, 8A, 81 Ω, 15V | 53nC | 24A | 40ns/450ns | 1.37mJ | ||||||||||||||||||||||||||||||||
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IXGH48N60C3C1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-247-3 | No SVHC | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | IXG*48N60 | 3 | Insulated Gate BIP Transistors | 300W | 300W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 75A | 600V | 600V | POWER CONTROL | SILICON | 2.5V | 47 ns | 2.5V @ 15V, 30A | 187 ns | PT | 20V | 5.5V | 400V, 30A, 3 Ω, 15V | 77nC | 250A | 19ns/60ns | 330μJ (on), 230μJ (off) | |||||||||||||||||||||||||||||||
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IRGSL4B60KD1PBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2004 | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.668mm | RoHS Compliant | Lead Free | 11A | No | 3 | ULTRA FAST SOFT RECOVERY | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.652mm | 4.826mm | Through Hole | -55°C~175°C TJ | 600V | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | Insulated Gate BIP Transistors | 63W | 1 | COLLECTOR | N-CHANNEL | Single | 63W | 93 ns | 11A | 600V | 2.5V | MOTOR CONTROL | SILICON | 18ns | 2.5V | 40 ns | 2.5V @ 15V, 4A | 199 ns | NPT | 20V | 5.5V | 89ns | 400V, 4A, 100 Ω, 15V | 12nC | 22A | 22ns/100ns | 73μJ (on), 47μJ (off) | |||||||||||||||||||||||||
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IRGP30B60KD-EP | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2004 | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 60A | No | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | Insulated Gate BIP Transistors | 304W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 304W | 46 ns | 125 ns | 60A | 600V | 2.35V | MOTOR CONTROL | 185 ns | SILICON | 28ns | 2.35V | 74 ns | 2.35V @ 15V, 30A | 237 ns | NPT | 20V | 5.5V | 42ns | 400V, 30A, 10 Ω, 15V | 102nC | 120A | 46ns/185ns | 350μJ (on), 825μJ (off) | ||||||||||||||||||||||||||||||
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IRGP4263D-EPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Through Hole | Tube | 2014 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | Through Hole | -40°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 325W | 325W | N-CHANNEL | Single | 170 ns | 90A | 650V | 2.1V | 80ns | 1.7V | 2.1V @ 15V, 48A | 20V | 7.7V | 50ns | 400V, 48A, 10 Ω, 15V | 145nC | 192A | 70ns/140ns | 2.9mJ (on), 1.4mJ (off) |
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IRGSL4B60KD1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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