Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Max Dual Supply Voltage | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Drain to Source Voltage (Vdss) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXDP35N60B | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 32 Weeks | Through Hole | Tube | 2000 | yes | Active | 1 (Unlimited) | 3 | 10.66mm | ROHS3 Compliant | 3 | HIGH SPEED | TO-220-3 | 9.15mm | 4.82mm | Through Hole | 2.299997g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXD*35N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 250W | 250W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 60A | 600V | 600V | MOTOR CONTROL | SILICON | 2.1V | 75 ns | 2.7V @ 15V, 35A | 390 ns | NPT | 20V | 5V | 300V, 35A, 10 Ω, 15V | 120nC | 70A | 1.6mJ (on), 800μJ (off) | |||||||||||||||||||||||||||||||||||||
 |
IKW25T120FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2006 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | -40°C~150°C TJ | Standard | e3 | Tin (Sn) | 3 | 190W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 190W | 200 ns | 50A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 82 ns | 2.2V @ 15V, 25A | 790 ns | NPT, Trench Field Stop | 1200V | 600V, 25A, 22 Ω, 15V | 155nC | 75A | 50ns/560ns | 4.2mJ | |||||||||||||||||||||||||||||||||||||||||
 |
IRG7PH35UDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2010 | Active | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 20.7mm | 5.31mm | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 180W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 180W | 30 ns | 105 ns | 50A | 1.2kV | 2.2V | POWER CONTROL | 160 ns | SILICON | 1.9V | 45 ns | 2.2V @ 15V, 20A | 400 ns | Trench | 1200V | 6V | 600V, 20A, 10 Ω, 15V | 85nC | 60A | 30ns/160ns | 1.06mJ (on), 620μJ (off) | |||||||||||||||||||||||||||||||||||||
 |
IRGI4090PBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2008 | Obsolete | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 3 | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | Standard | 34W | 34W | Single | 34W | TO-220AB Full-Pak | 21A | 300V | 1.94V | 1.94V | 1.94V @ 15V, 30A | Trench | 300V | 21A | 240V, 11A, 10Ohm | 34nC | 20ns/99ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SIGC12T60SNCX7SA2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 2.5V @ 15V, 10A | NPT | 600V | 10A | 400V, 10A, 25Ohm, 15V | 30A | 29ns/266ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RGTH80TK65DGC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-3PFM, SC-93-3 | not_compliant | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 66W | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 58ns | POWER CONTROL | SILICON | 84 ns | 2.1V @ 15V, 40A | 194 ns | Trench Field Stop | 650V | 31A | 400V, 40A, 10 Ω, 15V | 79nC | 160A | 34ns/120ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGK320N60B3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2010 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 1.7kW | 1700W | 1 | COLLECTOR | N-CHANNEL | Single | 1.7kW | 500A | 600V | 1.6V | POWER CONTROL | SILICON | 600V | 115 ns | 1.6V @ 15V, 100A | 780 ns | PT | 20V | 5V | 480V, 100A, 1 Ω, 15V | 585nC | 1200A | 44ns/250ns | 2.7mJ (on), 3.5mJ (off) | |||||||||||||||||||||||||||||||||||||
 |
APT75GN120B2G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 200A | No | 3 | HIGH RELIABILITY | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 833W | 1 | COLLECTOR | N-CHANNEL | Single | 200A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 101 ns | 2.1V @ 15V, 75A | 925 ns | Trench Field Stop | 1200V | 6.5V | 800V, 75A, 1 Ω, 15V | 425nC | 225A | 60ns/620ns | 8045μJ (on), 7640μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
 |
IXGK100N170 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 28 Weeks | Through Hole | 2012 | yes | Active | 1 (Unlimited) | 3 | 150°C | -55°C | ROHS3 Compliant | Lead Free | No | LOW CONDUCTION LOSS | TO-264 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 1 | COLLECTOR | N-CHANNEL | Single | 830W | 35 ns | 600A | 1.7kV | POWER CONTROL | 285 ns | 2.5V | 285 ns | 720 ns | 20V | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGX64N60B3D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 30 Weeks | Through Hole | Tube | 2012 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 460W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 35ns | 64A | 600V | 1.8V | POWER CONTROL | SILICON | 64 ns | 1.8V @ 15V, 50A | 326 ns | PT | 20V | 5V | 480V, 50A, 3 Ω, 15V | 168nC | 400A | 25ns/138ns | 1.5mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||
|
IXGK50N60AU1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 1997 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | HIGH SPEED | TO-264-3, TO-264AA | Through Hole | 10.000011g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*50N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 50 ns | 75A | 600V | 600V | POWER CONTROL | SILICON | 290 ns | 2.7V @ 15V, 50A | 880 ns | 20V | 2.7 V | 5.5V | 200ns | 480V, 50A, 2.7 Ω, 15V | 200nC | 200A | 50ns/200ns | 4.8mJ (off) | |||||||||||||||||||||||||||||||||||||||
|
IRG7PH28UEF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 2017 | Obsolete | 1 (Unlimited) | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
APT20GN60BG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 22 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 40A | No | TO-247-3 | Through Hole | -55°C~175°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 136W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 40A | 600V | 600V | POWER CONTROL | SILICON | 19 ns | 1.9V @ 15V, 20A | 290 ns | Trench Field Stop | 30V | 6.5V | 400V, 20A, 4.3 Ω, 15V | 120nC | 60A | 9ns/140ns | 230μJ (on), 580μJ (off) | ||||||||||||||||||||||||||||||||||||||||
 |
NGTB40N65IHRTG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 25 Weeks | LAST SHIPMENTS (Last Updated: 6 days ago) | Tube | 2017 | yes | Obsolete | Not Applicable | ROHS3 Compliant | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RJH60F3DPQ-A0#T0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | RJH60F | 3 | 178.5W | 178.5W | 90 ns | 40A | 600V | 1.82V | 1.82V @ 15V, 20A | Trench | 400V, 30A, 5 Ω, 15V | 44ns/65ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SIGC25T60SNCX1SA2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | 2005 | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | UPPER | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 3 | YES | R-XUUC-N3 | Not Qualified | 1 | N-CHANNEL | Single | 600V | 600V | POWER CONTROL | SILICON | 600V | 78 ns | 2.5V @ 15V, 30A | 391 ns | NPT | 30A | 400V, 30A, 11 Ω, 15V | 90A | 44ns/324ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
IKW25N120T2FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Tube | 2008 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 349W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 195ns | POWER CONTROL | SILICON | 49 ns | 2.2V @ 15V, 25A | 504 ns | Trench | 1200V | 50A | 600V, 25A, 16.4 Ω, 15V | 120nC | 100A | 27ns/265ns | 2.9mJ | ||||||||||||||||||||||||||||||||||||||||||
 |
RGT16NS65DGTL | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | not_compliant | Surface Mount | -40°C~175°C TJ | Standard | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 94W | 94W | 1 | COLLECTOR | N-CHANNEL | Single | 650V | 42 ns | 16A | 650V | 650V | POWER CONTROL | SILICON | 1.65V | 27 ns | 2.1V @ 15V, 8A | 170 ns | Trench Field Stop | 8A | 400V, 8A, 10 Ω, 15V | 21nC | 24A | 13ns/33ns | |||||||||||||||||||||||||||||||||||||||||||
|
IXGK60N60 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2000 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | ULTRA FAST | TO-264-3, TO-264AA | Through Hole | 10.000011g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*60N60 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 75A | 600V | 600V | POWER CONTROL | SILICON | 1.7V | 50 ns | 1.7V @ 15V, 60A | 650 ns | PT | 20V | 5V | 570ns | 480V, 60A, 2.7 Ω, 15V | 130nC | 200A | 50ns/300ns | 8mJ (off) | ||||||||||||||||||||||||||||||||||||||
 |
IXXH50N60C3 | IXYS | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | Through Hole | 6.500007g | -55°C~175°C TJ | Standard | SINGLE | IXX*N60 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 600W | 1 | SINGLE | TO-247AD | N-CHANNEL | 600W | 100A | 600V | 2.3V | POWER CONTROL | SILICON | 2.3V | 69 ns | 2.3V @ 15V, 36A | 170 ns | PT | 20V | 5.5V | 360V, 36A, 5 Ω, 15V | 64nC | 200A | 24ns/62ns | 720μJ (on), 330μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
|
SIGC15T60EX1SA4 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | TrenchStop™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Die | Surface Mount | -40°C~175°C TJ | Standard | UPPER | NO LEAD | YES | R-XUUC-N2 | 1 | SINGLE | N-CHANNEL | POWER CONTROL | SILICON | 1.9V @ 15V, 30A | Trench Field Stop | 600V | 30A | 90A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
63-9015 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXBF20N360 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2013 | BIMOSFET™ | Active | 1 (Unlimited) | ROHS3 Compliant | i4-Pac™-5 | unknown | Through Hole | -55°C~150°C TJ | Standard | 230W | 230W | 1.7 μs | 45A | 3.6kV | 3.4V | 3.4V @ 15V, 20A | 3600V | 1500V, 20A, 10 Ω, 15V | 43nC | 220A | 18ns/238ns | 15.5mJ (on), 4.3mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRGP4050PBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Through Hole | Bulk | 2004 | Obsolete | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | Lead Free | 104A | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | 250V | Standard | 330W | 330W | Single | 330W | TO-247AC | 104A | 250V | 1.9V | 35ns | 1.9V | 1.9V @ 15V, 30A | 250V | 104A | 180V, 30A, 5Ohm, 15V | 230nC | 208A | 37ns/120ns | 45μJ (on), 125μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
FGD3040G2-F085V | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, EcoSPARK® | yes | Active | 1 (Unlimited) | Non-RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | Logic | 150W | 1.25V @ 4V, 6A | 400V | 41A | 300V, 6.5A, 1000 Ω, 5V | 21nC | 0.9μs/4.8μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
RJH65T04BDPMA0#T2F | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2017 | Active | ROHS3 Compliant | SC-94 | Through Hole | 175°C TJ | Standard | 65W | 80ns | 1.95V @ 15V, 30A | Trench | 650V | 60A | 400V, 30A, 10 Ω, 15V | 74nC | 35ns/115ns | 360μJ (on), 350μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RGT30NS65DGC9 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Tube | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSIP-T3 | 133W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 55ns | POWER CONTROL | SILICON | 40 ns | 2.1V @ 15V, 15A | 204 ns | Trench Field Stop | 650V | 30A | 400V, 15A, 10 Ω, 15V | 32nC | 45A | 18ns/64ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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SIGC54T60R3EX1SA3 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | 2011 | TrenchStop™ | Active | 1 (Unlimited) | 10 | EAR99 | ROHS3 Compliant | Lead Free | Die | Surface Mount | -40°C~175°C TJ | Standard | UPPER | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | R-XUUC-N10 | 1 | SINGLE | Halogen Free | N-CHANNEL | 600V | 600V | POWER CONTROL | SILICON | 600V | 1.85V @ 15V, 100A | Trench Field Stop | 100A | 300A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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IHW40T120FKSA1 | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | TrenchStop® | Obsolete | 3 (168 Hours) | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~150°C TJ | Standard | 270W | PG-TO247-3 | 195ns | 2.3V @ 15V, 40A | Trench Field Stop | 1.2V | 75A | 600V, 40A, 15Ohm, 15V | 203nC | 105A | 48ns/480ns | 6.5mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RJH60M1DPP-M0#T2 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2012 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | RJH60M | 3 | Insulated Gate BIP Transistors | 30W | 30W | N-CHANNEL | 75 ns | 16A | 600V | 2.4V | 2.4V @ 15V, 8A | Trench | 30V | 300V, 8A, 5 Ω, 15V | 20.5nC | 30ns/55ns | 80μJ (on), 90μJ (off) |
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IKW25T120FKSA1 Infineon Technologies
IKW25T120FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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NGTB40N65IHRTG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Utmel
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SIGC25T60SNCX1SA2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IKW25N120T2FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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SIGC15T60EX1SA4 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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FGD3040G2-F085V datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
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SIGC54T60R3EX1SA3 Infineon Technologies
SIGC54T60R3EX1SA3 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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