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RF MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Material Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Voltage - Rated Current Rating Radiation Hardening Number of Pins Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Mfr Weight Voltage - Rated DC Operating Mode HTS Code Type JESD-609 Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Gain Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Output Power Case Connection Current Rating (Amps) Polarity/Channel Type Element Configuration Power Dissipation Breakdown Voltage Min Breakdown Voltage Supplier Device Package Continuous Drain Current (ID) Transistor Application DS Breakdown Voltage-Min FET Technology Transistor Element Material Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Drain to Source Voltage (Vdss) Feedback Cap-Max (Crss) Current - Test Transistor Type Voltage - Test Noise Figure Power - Output Channel Type Mode of Operation HTS Maximum Operating Temperature (°C) Minimum Operating Temperature (°C) Mounting Package Height Package Length Package Width PCB changed Supplier Package ECCN (US) Military Output Power (W) Channel Mode Number of Elements per Chip Maximum Drain Source Voltage (V) Maximum Gate Source Voltage (V) Maximum Drain Source Resistance (mOhm) Typical Input Capacitance @ Vds (pF) Typical Reverse Transfer Capacitance @ Vds (pF) Typical Output Capacitance @ Vds (pF) Process Technology Typical Power Gain (dB) Maximum Frequency (MHz) Minimum Frequency (MHz) Typical Drain Efficiency (%) Maximum VSWR Maximum Gate Threshold Voltage (V) Maximum Gate Source Leakage Current (nA) Maximum IDSS (uA)
C4H2350N10Z C4H2350N10Z Ampleon USA Inc. 0.0000
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0.00000000 50 V 6-VDFN Exposed Pad 2.3GHz ~ 5GHz Ampleon USA Inc. 19dB - 6-DFN (4.5x4) - - -
BLA8G1011L-300GU BLA8G1011L-300GU Ampleon USA Inc. 0.0000
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0.00000000 download 13 Weeks Tray 2011 Active 1 (Unlimited) ROHS3 Compliant 65V SOT-502A 1.06GHz 16.5dB CDFM2 150mA LDMOS 32V 300W
RFM01U7P(TE12L,F) RFM01U7P(TE12L,F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 Cut Tape (CT) 2009 Discontinued 1 (Unlimited) RoHS Compliant 1A TO-243AA unknown 520MHz ENHANCEMENT MODE YES 150°C FET General Purpose Power 10.8dB 3W Single 1A METAL-OXIDE SEMICONDUCTOR 10V 1A 20V 100mA N-Channel 7.2V 1.2W
BLS7G2729L-350P,11 BLS7G2729L-350P,11 Ampleon USA Inc. 0.0000
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0.00000000 download 13 Weeks Tray 2011 Not For New Designs 1 (Unlimited) 4 EAR99 ROHS3 Compliant 65V SOT539A unknown 2.7GHz~2.9GHz ENHANCEMENT MODE FLAT NOT SPECIFIED NOT SPECIFIED YES R-CDFM-F4 13dB IEC-60134 2 COMMON SOURCE, 2 ELEMENTS N-CHANNEL AMPLIFIER 65V METAL-OXIDE SEMICONDUCTOR SILICON 200mA LDMOS (Dual), Common Source 32V 350W
NTLTS3107PR2G NTLTS3107PR2G Rochester Electronics 0.0000
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0.00000000 download Obsolete 1 (Unlimited) ROHS3 Compliant
BLC8G27LS-60AVY BLC8G27LS-60AVY Ampleon USA Inc. 0.0000
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0.00000000 download 13 Weeks Tape & Reel (TR) 2011 Active 3 (168 Hours) ROHS3 Compliant SOT1275-3 DFM6
CGHV40180P CGHV40180P Cree/Wolfspeed 0.0000
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0.00000000 GaN Active 125V 440206 2GHz 19.8dB 440206 1A HEMT 50V 180W
CGH27015P CGH27015P Cree/Wolfspeed 0.0000
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0.00000000 GaN Active 84V 440196 2.3GHz~2.9GHz 15dB 440196 100mA HEMT 28V 15W
D1029UK D1029UK TT Electronics / Semelab 0.0000
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0.00000000 download Si Active RoHS Compliant 5 Dual Common Source N
D1014UK D1014UK TT Electronics / Semelab 0.0000
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0.00000000 download Si Active RoHS Compliant 3 Single N
D1020UK D1020UK TT Electronics / Semelab 0.0000
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0.00000000 download Si Active RoHS Compliant 5 Dual Common Source N
BLC10G18XS-360AVT BLC10G18XS-360AVT Ampleon 0.0000
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0.00000000 download Active MOSFET 7 Dual Common Source N 1-Carrier W-CDMA
IGN2729M400R2 IGN2729M400R2 Integra Technologies Inc. 0.0000
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0.00000000 4 Weeks Active 1 (Unlimited) ROHS3 Compliant
D1011UKTR D1011UKTR TT Electronics / Semelab 0.0000
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0.00000000 download Si Active RoHS Compliant 8 Dual Quad Source N
IGT5259CW50 IGT5259CW50 Integra Technologies Inc. 0.0000
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0.00000000 4 Weeks Active 2 (1 Year) ROHS3 Compliant
CLF1G0035-100H CLF1G0035-100H Ampleon USA Inc. 0.0000
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0.00000000 - 150 V SOT467C 3GHz Ampleon USA Inc. 12dB SOT467C 330 mA GaN HEMT 50 V - 100W
275-201N25A-00 275-201N25A-00 IXYS-RF 0.0000
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0.00000000 download Tube DE Obsolete 1 (Unlimited) 200V 6-SMD, Flat Lead Exposed Pad 25A N-Channel 590W
150-201N09A-00 150-201N09A-00 IXYS-RF 0.0000
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0.00000000 download 10 Weeks Tube DE Obsolete 1 (Unlimited) 200V 6-SMD, Flat Lead Exposed Pad 9A DE150 N-Channel 200W
MMBF5486 MMBF5486 ON Semiconductor 0.0000
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0.00000000 download 16 Weeks ACTIVE (Last Updated: 1 week ago) Surface Mount Tape & Reel (TR) 2008 yes Active 1 (Unlimited) 3 EAR99 150°C -55°C 2.92mm ROHS3 Compliant Lead Free Tin 10mA No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 400MHz 930μm 1.3mm 30mg 25V DEPLETION MODE 8541.21.00.95 e3 DUAL GULL WING MMBF5486 Other Transistors 225mW 1 225mW Single 225mW -25V 20mA AMPLIFIER METAL-OXIDE SEMICONDUCTOR -25V 1 pF N-Channel JFET 15V 4dB
D1021UK D1021UK TT Electronics / Semelab 0.0000
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0.00000000 download Si Active RoHS Compliant 5 Dual Common Source N
D2282UK.F D2282UK.F TT Electronics / Semelab 0.0000
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0.00000000 download Si Active RoHS Compliant 4 Single Dual Drain N
D2014UK D2014UK TT Electronics / Semelab 0.0000
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0.00000000 download Si Active RoHS Compliant 6 Single Quad Source N
GTRA263902FC-V2-R2 GTRA263902FC-V2-R2 Cree/Wolfspeed 0.0000
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0.00000000 GaN Active 125V H-37248C-4 2.495GHz~2.69GHz 13.8dB H-37248C-4 280mA HEMT 48V 370W
475-102N21A-00 475-102N21A-00 IXYS-RF 0.0000
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0.00000000 26 Weeks Tube DE Active 1 (Unlimited) 1000V 6-SMD, Flat Lead Exposed Pad 24A N-Channel 1800W
IXZR08N120B-00 IXZR08N120B-00 IXYS-RF 0.0000
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0.00000000 download 10 Weeks Tube Z-MOS™ Obsolete 1 (Unlimited) 1200V TO-247-3 65MHz 23dB 8A PLUS247™-3 N-Channel 100V 250W
3SK291(TE85L,F) 3SK291(TE85L,F) Toshiba Semiconductor and Storage 8.8766
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0.00000000 52 Weeks Cut Tape (CT) 2009 Active 1 (Unlimited) RoHS Compliant 30mA 4 SC-61AA 800MHz YES 125°C FET General Purpose Powers 22.5dB 150mW Single 30mA METAL-OXIDE SEMICONDUCTOR 0.03A 12.5V 10mA N-Channel Dual Gate 6V 2.5dB
BLP05H6350XR BLP05H6350XR Ampleon 0.0000
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0.00000000 download Tape and Reel Active RoHS Compliant 4 Dual Common Source N Pulsed RF 8541.29.00.75 225 -65 Surface Mount 3.6 20.57 9.96 4 HSOP-F EAR99 No 350 Enhancement 2 135 11 290(Typ)@6.08V 161@50V 1.3@50V 53@50V LDMOS 27.5 600 10 75 65 2.33 140 1.4
BLP25M705Z BLP25M705Z Ampleon USA Inc. 0.0000
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0.00000000 download 13 Weeks Tape & Reel (TR) 2011 Not For New Designs 3 (168 Hours) 12 EAR99 ROHS3 Compliant 65V 12-VDFN Exposed Pad unknown 2.14GHz ENHANCEMENT MODE DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED YES R-PDSO-N12 16dB IEC-60134 1 SINGLE MO-229 SOURCE N-CHANNEL AMPLIFIER 65V METAL-OXIDE SEMICONDUCTOR SILICON 55mA LDMOS 28V 1W
MMBF5484 MMBF5484 ON Semiconductor 0.0000
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0.00000000 download 16 Weeks ACTIVE (Last Updated: 3 days ago) Surface Mount Tape & Reel (TR) 2008 yes Active 1 (Unlimited) 3 EAR99 150°C -55°C 2.92mm ROHS3 Compliant Lead Free Tin 10mA No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 400MHz 930μm 1.3mm 30mg 25V DEPLETION MODE 8541.21.00.95 e3 DUAL GULL WING MBF5484 Other Transistors 225mW 1 225mW Single 225mW -25V 25V 5mA AMPLIFIER JUNCTION -25V 1 pF N-Channel JFET 15V 4dB
PTFB072707FH-V1-R250 PTFB072707FH-V1-R250 Cree/Wolfspeed 0.0000
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant
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