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TIP111
TIP111
154-TIP111
TO-220-3
TIP111 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available at HK JDW
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TIP111 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 1A 4V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 8mA, 2A.Continuous collector voltage should be kept at 2A for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.A transition frequency of 25MHz is present in the part.In extreme cases, the collector current can be as low as 2A volts.
TIP111 Features
the DC current gain for this device is 1000 @ 1A 4V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 25MHz
TIP111 Applications
There are a lot of Central Semiconductor Corp TIP111 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
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TIP111
technical specifications, attributes, parameters and parts with similar specifications to TIP111.
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