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  • STW75NF30

STW75NF30

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Manufacturer No:

STW75NF30

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STW75NF30

Package:

TO-247-3

Datasheet:

STW75NF30

Description:

STW75NF30 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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Description


The STW75NF30 is an N-channel 300 V, 0.037 ?, 60 A, TO-247 low gate charge STripFET? Power MOSFET. This Power MOSFET series was specifically created to reduce input capacitance and gate charge using STMicroelectronics' proprietary STripFETTM technology. Therefore, it is appropriate for use as the primary switch in modern, high-efficiency, isolated DC-DC converters.



Features


  • Exceptional dv/dt capability

  • Low gate charge

  • 100% Avalanche tested

  • Maximum junction temperature (TJ(max))

  • Continuous drain current (ID)

  • Safe operating area (SOA)



Applications


  • Switching applications

  • Small motor control

  • Switch Mode Power Supplies (SMPS)

  • Power-Over-Ethernet (PoE)

  • Solar inverters

  • Automotive applications


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STW75NF30

technical specifications, attributes, parameters and parts with similar specifications to STW75NF30.

  • Type
    Parameter
    Select All
  • Contact Plating

    Tin

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-247-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Series

    STripFET™

  • JESD-609 Code

    e3

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Resistance

    45mOhm

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Base Part Number

    STW75N

  • Pin Count

    3

  • Number of Elements

    1

  • Power Dissipation-Max

    320W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    320W

  • Turn On Delay Time

    115 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    45m Ω @ 30A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    5930pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    60A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    164nC @ 10V

  • Rise Time

    87ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    101 ns

  • Turn-Off Delay Time

    141 ns

  • Continuous Drain Current (ID)

    60A

  • Threshold Voltage

    3V

  • JEDEC-95 Code

    TO-247AD

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    300V

  • Pulsed Drain Current-Max (IDM)

    240A

  • Height

    20.15mm

  • Length

    15.75mm

  • Width

    5.15mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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