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  • STW26NM60N

STW26NM60N

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Manufacturer No:

STW26NM60N

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STW26NM60N

Package:

TO-247-3

Datasheet:

STW26NM60N

Description:

STW26NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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STW26NM60N Description

The STW26NM60N is a 600V N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
STW26NM60N Features

100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
STW26NM60N Applications

Industrial
Aerospace & defense Appliances Building automation Electronic point of sale (EPOS)Factory automation & control Grid infrastructure Industrial transport (non-car & non-light truck) Lighting Medical Motor drives Power delivery Pro audio, video & signage Test & measurement
Enterprise systems
Data center & enterprise computing Enterprise machine Enterprise projectors
Personal electronics
Connected peripherals & printers Data storage Gaming Home theater & entertainment Mobile phones PC & notebooks Portable electronics Tablets TV Wearables (non-medical)
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STW26NM60N

technical specifications, attributes, parameters and parts with similar specifications to STW26NM60N.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    16 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 8 months ago)

  • Contact Plating

    Tin

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-247-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    150°C TJ

  • Packaging

    Tube

  • Series

    MDmesh™ II

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Resistance

    165mOhm

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Base Part Number

    STW26N

  • Pin Count

    3

  • Number of Elements

    1

  • Power Dissipation-Max

    140W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    140W

  • Turn On Delay Time

    13 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    165m Ω @ 10A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1800pF @ 50V

  • Current - Continuous Drain (Id) @ 25°C

    20A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    60nC @ 10V

  • Rise Time

    25ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±30V

  • Fall Time (Typ)

    50 ns

  • Turn-Off Delay Time

    85 ns

  • Continuous Drain Current (ID)

    20A

  • Threshold Voltage

    3V

  • Gate to Source Voltage (Vgs)

    25V

  • Drain to Source Breakdown Voltage

    600V

  • Pulsed Drain Current-Max (IDM)

    80A

  • Height

    20.15mm

  • Length

    15.75mm

  • Width

    5.15mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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