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STP7NM80
STP7NM80
761-STP7NM80
TO-220-3
STP7NM80 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at HK JDW
In Stock : 999
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Product Details
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STP7NM80 MOSFET Description
The STPNM80 MOSFET has a drain to source voltage rated at 800 V and an on-resistance of 1.05 Ω. Furthermore, it is able to sustain a continuous current of 6.5 A. MDmeshTM technology incorporates the advantages of the multiple drain process into the well-known PowerMESHTM horizontal layout framework from STMicroelectronics. The end result is a product with low on-resistance, high dv/dt capability, and good avalanche properties.
STP7NM80 MOSFET Features
100% avalanche tested
Very low input capacitance and gate charge
Vey low gate input resistance
6.5 A Drain continuous current
-55 to 150 °C automotive-grade operating temperature
STP7NM80 MOSFET Applications
Switching Applications
Converters
Lighting Control
Audio amplifiers
Power supplies
Telecom
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STP7NM80
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