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STP5NK60ZFP

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Manufacturer No:

STP5NK60ZFP

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STP5NK60ZFP

Package:

TO-220-3 Full Pack

Datasheet:

STP5NK60ZFP

Description:

STP5NK60ZFP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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STP5NK60ZFP Description

STP5NK60ZFP is a 600V N-channel SuperMESH? Power MOSFET. The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh? products.
STP5NK60ZFP Features

typical RDS(on) = 1.2Ω
extremely high dv/dt capability
100% avalanche tested
gate charge minimized
very low intrinsic capacitances
very good manufacturing repeatibility
STP5NK60ZFP Applications

high current, high speed switching
ideal for off-line power supplies, adaptors and pfc
lighting
Switching applications
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STP5NK60ZFP

technical specifications, attributes, parameters and parts with similar specifications to STP5NK60ZFP.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 7 months ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3 Full Pack

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Series

    SuperMESH™

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn) - annealed

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Base Part Number

    STP5N

  • Pin Count

    3

  • Number of Elements

    1

  • Power Dissipation-Max

    25W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    25W

  • Case Connection

    ISOLATED

  • Turn On Delay Time

    16 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    1.6 Ω @ 2.5A, 10V

  • Vgs(th) (Max) @ Id

    4.5V @ 50μA

  • Input Capacitance (Ciss) (Max) @ Vds

    690pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    5A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    34nC @ 10V

  • Rise Time

    25ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±30V

  • Fall Time (Typ)

    25 ns

  • Turn-Off Delay Time

    36 ns

  • Continuous Drain Current (ID)

    5A

  • Threshold Voltage

    3.75V

  • JEDEC-95 Code

    TO-220AB

  • Gate to Source Voltage (Vgs)

    30V

  • Drain Current-Max (Abs) (ID)

    5A

  • Drain to Source Breakdown Voltage

    600V

  • Pulsed Drain Current-Max (IDM)

    20A

  • Avalanche Energy Rating (Eas)

    220 mJ

  • Height

    16.4mm

  • Length

    10.4mm

  • Width

    4.6mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

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