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STGP10NB60SD

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Manufacturer No:

STGP10NB60SD

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STGP10NB60SD

Package:

TO-220-3

Datasheet:

STGP10NB60SD

Description:

STGP10NB60SD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STGP10NB60SD

technical specifications, attributes, parameters and parts with similar specifications to STGP10NB60SD.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    8 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 8 months ago)

  • Contact Plating

    Tin

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Weight

    6.000006g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Series

    PowerMESH™

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Subcategory

    Insulated Gate BIP Transistors

  • Voltage - Rated DC

    600V

  • Max Power Dissipation

    80W

  • Current Rating

    20A

  • Base Part Number

    STGP10

  • Pin Count

    3

  • JESD-30 Code

    R-PSFM-T3

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    3.5W

  • Case Connection

    COLLECTOR

  • Input Type

    Standard

  • Turn On Delay Time

    700 ns

  • Power - Max

    80W

  • Transistor Application

    POWER CONTROL

  • Rise Time

    460ns

  • Polarity/Channel Type

    N-CHANNEL

  • Turn-Off Delay Time

    1.2 μs

  • Collector Emitter Voltage (VCEO)

    600V

  • Max Collector Current

    29A

  • Reverse Recovery Time

    37 ns

  • Continuous Drain Current (ID)

    10A

  • JEDEC-95 Code

    TO-220AB

  • Collector Emitter Breakdown Voltage

    600V

  • Drain to Source Breakdown Voltage

    600V

  • Turn On Time

    1160 ns

  • Test Condition

    480V, 10A, 1k Ω, 15V

  • Vce(on) (Max) @ Vge, Ic

    1.75V @ 15V, 10A

  • Turn Off Time-Nom (toff)

    3100 ns

  • Gate Charge

    33nC

  • Current - Collector Pulsed (Icm)

    80A

  • Td (on/off) @ 25°C

    700ns/1.2μs

  • Switching Energy

    600μJ (on), 5mJ (off)

  • Gate-Emitter Voltage-Max

    20V

  • Gate-Emitter Thr Voltage-Max

    5V

  • Height

    9.15mm

  • Length

    10.4mm

  • Width

    4.6mm

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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