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  • STGB10NC60KDT4

STGB10NC60KDT4

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Manufacturer No:

STGB10NC60KDT4

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STGB10NC60KDT4

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Datasheet:

STGB10NC60KDT4

Description:

STGB10NC60KDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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STGB10NC60KDT4 Descritpion

STGB10NC60KDT4 belongs to the family of short-circuit rugged IGBTs that are designed based on advanced PowerMESH? technology. An excellent trade-off can be ensured between advanced switching performance and low on-state behavior. On the basis of these features, it is ideally suitable for resonant or soft-switching applications.


STGB10NC60KDT4 Features


Advanced switching performance
Low on-state behavior
Excellent trade-off
Low on-state voltage drop
Available in the D2PAK package


STGB10NC60KDT4 Applications


High-frequency motor controls
Resonant or soft-switching applications
Motor drives

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STGB10NC60KDT4

technical specifications, attributes, parameters and parts with similar specifications to STGB10NC60KDT4.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    8 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 7 months ago)

  • Contact Plating

    Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • Number of Pins

    3

  • Weight

    2.240009g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Series

    PowerMESH™

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • Termination

    SMD/SMT

  • ECCN Code

    EAR99

  • Subcategory

    Insulated Gate BIP Transistors

  • Voltage - Rated DC

    600V

  • Max Power Dissipation

    65W

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    245

  • Current Rating

    10A

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Base Part Number

    STGB10

  • Pin Count

    3

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    60W

  • Case Connection

    ISOLATED

  • Input Type

    Standard

  • Turn On Delay Time

    17 ns

  • Power - Max

    65W

  • Transistor Application

    POWER CONTROL

  • Rise Time

    6ns

  • Drain to Source Voltage (Vdss)

    600V

  • Polarity/Channel Type

    N-CHANNEL

  • Turn-Off Delay Time

    72 ns

  • Collector Emitter Voltage (VCEO)

    600V

  • Max Collector Current

    20A

  • Reverse Recovery Time

    22 ns

  • Continuous Drain Current (ID)

    10A

  • Collector Emitter Breakdown Voltage

    600V

  • Collector Emitter Saturation Voltage

    2.5V

  • Max Breakdown Voltage

    600V

  • Turn On Time

    23 ns

  • Test Condition

    390V, 5A, 10 Ω, 15V

  • Vce(on) (Max) @ Vge, Ic

    2.5V @ 15V, 5A

  • Turn Off Time-Nom (toff)

    242 ns

  • Gate Charge

    19nC

  • Current - Collector Pulsed (Icm)

    30A

  • Td (on/off) @ 25°C

    17ns/72ns

  • Switching Energy

    55μJ (on), 85μJ (off)

  • Gate-Emitter Voltage-Max

    20V

  • Gate-Emitter Thr Voltage-Max

    7V

  • Height

    4.6mm

  • Length

    10.4mm

  • Width

    9.35mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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