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  • STF11NM80

STF11NM80

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Manufacturer No:

STF11NM80

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STF11NM80

Package:

TO-220-3 Full Pack

Datasheet:

STF11NM80

Description:

STF11NM80 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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STF11NM80 Description


STMicroelectronics' breakthrough MDmeshTM technology, which combines the multiple drain process with the company's PowerMESHTM horizontal layout, was used to manufacture STF11NM80 MOSFETs. These devices have a very low on-resistance, a very high dv/dt, and good avalanche properties. These Power MOSFETs have an overall dynamic performance that is superior to similar items on the market because to ST's proprietary strip process.



STF11NM80 Features


  • Gate charge and input capacitance are both low.

  • Input gate resistance is low.

  • The industry's best RDS(on)*Qg



STF11NM80 Applications


Switching applications


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STF11NM80

technical specifications, attributes, parameters and parts with similar specifications to STF11NM80.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    16 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3 Full Pack

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -65°C~150°C TJ

  • Packaging

    Tube

  • Series

    MDmesh™

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Resistance

    400mOhm

  • Terminal Finish

    Matte Tin (Sn) - annealed

  • Additional Feature

    ULTRA-LOW RESISTANCE

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    800V

  • Technology

    MOSFET (Metal Oxide)

  • Current Rating

    11A

  • Base Part Number

    STF11

  • Pin Count

    3

  • Number of Elements

    1

  • Power Dissipation-Max

    35W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    35W

  • Case Connection

    ISOLATED

  • Turn On Delay Time

    22 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    400m Ω @ 5.5A, 10V

  • Vgs(th) (Max) @ Id

    5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1630pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    11A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    43.6nC @ 10V

  • Rise Time

    17ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±30V

  • Fall Time (Typ)

    15 ns

  • Turn-Off Delay Time

    46 ns

  • Continuous Drain Current (ID)

    11A

  • Threshold Voltage

    4V

  • JEDEC-95 Code

    TO-220AB

  • Gate to Source Voltage (Vgs)

    30V

  • Drain to Source Breakdown Voltage

    800V

  • Pulsed Drain Current-Max (IDM)

    44A

  • Avalanche Energy Rating (Eas)

    400 mJ

  • Height

    9.3mm

  • Length

    10.4mm

  • Width

    4.6mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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