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  • SSTA28T116

SSTA28T116

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Manufacturer No:

SSTA28T116

Manufacturer:

ROHM Semiconductor

HK JDW NO:

687-SSTA28T116

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

-

Description:

SSTA28T116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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SSTA28T116 Overview


In this device, the DC current gain is 10000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.With the emitter base voltage set at 12V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (300mA).Parts of this part have transition frequencies of 200MHz.This device can take an input voltage of 80V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 300mA volts at Single BJT transistors maximum.

SSTA28T116 Features


the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
the current rating of this device is 300mA
a transition frequency of 200MHz

SSTA28T116 Applications


There are a lot of ROHM Semiconductor SSTA28T116 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

SSTA28T116

technical specifications, attributes, parameters and parts with similar specifications to SSTA28T116.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    10 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2005

  • JESD-609 Code

    e1

  • Pbfree Code

    yes

  • Part Status

    Not For New Designs

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Termination

    SMD/SMT

  • ECCN Code

    EAR99

  • HTS Code

    8541.21.00.75

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    80V

  • Max Power Dissipation

    200mW

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    300mA

  • Time@Peak Reflow Temperature-Max (s)

    10

  • Base Part Number

    STA28

  • Pin Count

    3

  • Number of Elements

    1

  • Polarity

    NPN

  • Element Configuration

    Single

  • Power Dissipation

    200mW

  • Transistor Application

    AMPLIFIER

  • Transistor Type

    NPN - Darlington

  • Collector Emitter Voltage (VCEO)

    80V

  • Max Collector Current

    300mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    10000 @ 100mA 5V

  • Current - Collector Cutoff (Max)

    500nA

  • Vce Saturation (Max) @ Ib, Ic

    1.5V @ 100μA, 100mA

  • Collector Emitter Breakdown Voltage

    80V

  • Transition Frequency

    200MHz

  • Max Breakdown Voltage

    80V

  • Frequency - Transition

    200MHz

  • Collector Base Voltage (VCBO)

    80V

  • Emitter Base Voltage (VEBO)

    12V

  • hFE Min

    10000

  • VCEsat-Max

    1.5 V

  • Collector-Base Capacitance-Max

    8pF

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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