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  • SQ4153EY-T1_GE3

SQ4153EY-T1_GE3

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Manufacturer No:

SQ4153EY-T1_GE3

Manufacturer:

Vishay Siliconix

HK JDW NO:

880-SQ4153EY-T1_GE3

Package:

8-SOIC (0.154, 3.90mm Width)

Datasheet:

SQ4153EY-T1_GE3

Description:

Automotive P-Channel 12 V (D-S) 175 °C MOSFET

Quantity:

In Stock : 999

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4. Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

Purchasing and Inquiry

Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

SQ4153EY-T1_GE3

technical specifications, attributes, parameters and parts with similar specifications to SQ4153EY-T1_GE3.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mounting Type

    Surface Mount

  • Package / Case

    8-SOIC (0.154, 3.90mm Width)

  • Surface Mount

    YES

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tape & Reel (TR)

  • Series

    Automotive, AEC-Q101, TrenchFET®

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    8

  • ECCN Code

    EAR99

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Reach Compliance Code

    unknown

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • JESD-30 Code

    R-PDSO-G8

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Number of Channels

    1

  • Power Dissipation-Max

    7.1W Tc

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    7.1W

  • Turn On Delay Time

    31 ns

  • FET Type

    P-Channel

  • Rds On (Max) @ Id, Vgs

    8.32m Ω @ 14A, 4.5V

  • Vgs(th) (Max) @ Id

    900mV @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    11000pF @ 6V

  • Current - Continuous Drain (Id) @ 25°C

    25A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    151nC @ 4.5V

  • Drain to Source Voltage (Vdss)

    12V

  • Drive Voltage (Max Rds On,Min Rds On)

    1.8V 4.5V

  • Vgs (Max)

    ±8V

  • Turn-Off Delay Time

    310 ns

  • Continuous Drain Current (ID)

    -25A

  • Gate to Source Voltage (Vgs)

    8V

  • Drain-source On Resistance-Max

    0.00832Ohm

  • Drain to Source Breakdown Voltage

    -12V

  • Max Junction Temperature (Tj)

    175°C

  • Feedback Cap-Max (Crss)

    3600 pF

  • Height

    1.75mm

  • RoHS Status

    Non-RoHS Compliant

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United Kingdom/GBP Summary
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